JPWO2022168372A1 - - Google Patents
Info
- Publication number
- JPWO2022168372A1 JPWO2022168372A1 JP2022579333A JP2022579333A JPWO2022168372A1 JP WO2022168372 A1 JPWO2022168372 A1 JP WO2022168372A1 JP 2022579333 A JP2022579333 A JP 2022579333A JP 2022579333 A JP2022579333 A JP 2022579333A JP WO2022168372 A1 JPWO2022168372 A1 JP WO2022168372A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021017823 | 2021-02-05 | ||
| JP2021017823 | 2021-02-05 | ||
| PCT/JP2021/037793 WO2022168372A1 (ja) | 2021-02-05 | 2021-10-12 | 希土類含有ＳｉＣ基板及びそれを用いたＳｉＣ複合基板 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022168372A1 true JPWO2022168372A1 (https=) | 2022-08-11 |
| JPWO2022168372A5 JPWO2022168372A5 (https=) | 2023-04-26 |
| JP7538900B2 JP7538900B2 (ja) | 2024-08-22 |
Family
ID=82741001
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022579333A Active JP7538900B2 (ja) | 2021-02-05 | 2021-10-12 | 希土類含有ＳｉＣ基板及びそれを用いたＳｉＣ複合基板 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP7538900B2 (https=) |
| WO (1) | WO2022168372A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN119654452A (zh) * | 2022-08-22 | 2025-03-18 | 日本碍子株式会社 | SiC基板及SiC复合基板 |
| CN120858208A (zh) * | 2023-03-28 | 2025-10-28 | 日本碍子株式会社 | SiC基板及SiC复合基板 |
| JP2024169169A (ja) * | 2023-05-25 | 2024-12-05 | 住友金属鉱山株式会社 | ＳｉＣ半導体装置用基板、ＳｉＣ接合基板、ＳｉＣ多結晶基板およびＳｉＣ多結晶基板の製造方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11268995A (ja) * | 1998-03-20 | 1999-10-05 | Denso Corp | 炭化珪素単結晶の製造方法 |
| JP2004323293A (ja) * | 2003-04-24 | 2004-11-18 | Toyota Motor Corp | ＳｉＣ単結晶の製造方法 |
| JP2011051857A (ja) * | 2009-09-03 | 2011-03-17 | Sumitomo Metal Ind Ltd | 炭化珪素単結晶の製造方法 |
| CN111270304A (zh) * | 2020-03-27 | 2020-06-12 | 江苏超芯星半导体有限公司 | 一种制备4h碳化硅单晶的方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114901875B (zh) * | 2020-01-24 | 2024-05-10 | 日本碍子株式会社 | 含有稀土的SiC基板和SiC外延层的制造方法 |
| CN114761629B (zh) * | 2020-01-24 | 2024-06-25 | 日本碍子株式会社 | 双轴取向SiC复合基板以及半导体器件用复合基板 |
-
2021
- 2021-10-12 WO PCT/JP2021/037793 patent/WO2022168372A1/ja not_active Ceased
- 2021-10-12 JP JP2022579333A patent/JP7538900B2/ja active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11268995A (ja) * | 1998-03-20 | 1999-10-05 | Denso Corp | 炭化珪素単結晶の製造方法 |
| JP2004323293A (ja) * | 2003-04-24 | 2004-11-18 | Toyota Motor Corp | ＳｉＣ単結晶の製造方法 |
| JP2011051857A (ja) * | 2009-09-03 | 2011-03-17 | Sumitomo Metal Ind Ltd | 炭化珪素単結晶の製造方法 |
| CN111270304A (zh) * | 2020-03-27 | 2020-06-12 | 江苏超芯星半导体有限公司 | 一种制备4h碳化硅单晶的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7538900B2 (ja) | 2024-08-22 |
| WO2022168372A1 (ja) | 2022-08-11 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230209 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20230209 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20240327 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20240510 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20240807 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20240809 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 7538900 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |