JPWO2022168372A1 - - Google Patents

Info

Publication number
JPWO2022168372A1
JPWO2022168372A1 JP2022579333A JP2022579333A JPWO2022168372A1 JP WO2022168372 A1 JPWO2022168372 A1 JP WO2022168372A1 JP 2022579333 A JP2022579333 A JP 2022579333A JP 2022579333 A JP2022579333 A JP 2022579333A JP WO2022168372 A1 JPWO2022168372 A1 JP WO2022168372A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022579333A
Other versions
JPWO2022168372A5 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022168372A1 publication Critical patent/JPWO2022168372A1/ja
Publication of JPWO2022168372A5 publication Critical patent/JPWO2022168372A5/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2022579333A 2021-02-05 2021-10-12 Pending JPWO2022168372A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021017823 2021-02-05
PCT/JP2021/037793 WO2022168372A1 (ja) 2021-02-05 2021-10-12 希土類含有ＳｉＣ基板及びそれを用いたＳｉＣ複合基板

Publications (2)

Publication Number Publication Date
JPWO2022168372A1 true JPWO2022168372A1 (ja) 2022-08-11
JPWO2022168372A5 JPWO2022168372A5 (ja) 2023-04-26

Family

ID=82741001

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022579333A Pending JPWO2022168372A1 (ja) 2021-02-05 2021-10-12

Country Status (2)

Country Link
JP (1) JPWO2022168372A1 (ja)
WO (1) WO2022168372A1 (ja)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11268995A (ja) * 1998-03-20 1999-10-05 Denso Corp 炭化珪素単結晶の製造方法
JP2004323293A (ja) * 2003-04-24 2004-11-18 Toyota Motor Corp ＳｉＣ単結晶の製造方法
JP5218348B2 (ja) * 2009-09-03 2013-06-26 新日鐵住金株式会社 炭化珪素単結晶の製造方法
JP7282214B2 (ja) * 2020-01-24 2023-05-26 日本碍子株式会社 希土類含有ＳｉＣ基板及びＳｉＣエピタキシャル層の製法
WO2021149598A1 (ja) * 2020-01-24 2021-07-29 日本碍子株式会社 二軸配向ＳｉＣ複合基板及び半導体デバイス用複合基板
CN111270304A (zh) * 2020-03-27 2020-06-12 江苏超芯星半导体有限公司 一种制备4h碳化硅单晶的方法

Also Published As

Publication number Publication date
WO2022168372A1 (ja) 2022-08-11

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