JPWO2021149235A1 - - Google Patents

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Publication number
JPWO2021149235A1
JPWO2021149235A1 JP2021572228A JP2021572228A JPWO2021149235A1 JP WO2021149235 A1 JPWO2021149235 A1 JP WO2021149235A1 JP 2021572228 A JP2021572228 A JP 2021572228A JP 2021572228 A JP2021572228 A JP 2021572228A JP WO2021149235 A1 JPWO2021149235 A1 JP WO2021149235A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021572228A
Other versions
JP7282214B2 (ja
JPWO2021149235A5 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021149235A1 publication Critical patent/JPWO2021149235A1/ja
Publication of JPWO2021149235A5 publication Critical patent/JPWO2021149235A5/ja
Application granted granted Critical
Publication of JP7282214B2 publication Critical patent/JP7282214B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02581—Transition metal or rare earth elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02609—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
JP2021572228A 2020-01-24 2020-01-24 希土類含有ＳｉＣ基板及びＳｉＣエピタキシャル層の製法 Active JP7282214B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/002447 WO2021149235A1 (ja) 2020-01-24 2020-01-24 希土類含有ＳｉＣ基板及びＳｉＣエピタキシャル層の製法

Publications (3)

Publication Number Publication Date
JPWO2021149235A1 true JPWO2021149235A1 (ja) 2021-07-29
JPWO2021149235A5 JPWO2021149235A5 (ja) 2022-09-13
JP7282214B2 JP7282214B2 (ja) 2023-05-26

Family

ID=76993173

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021572228A Active JP7282214B2 (ja) 2020-01-24 2020-01-24 希土類含有ＳｉＣ基板及びＳｉＣエピタキシャル層の製法

Country Status (3)

Country Link
US (1) US20220328310A1 (ja)
JP (1) JP7282214B2 (ja)
WO (1) WO2021149235A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2022168372A1 (ja) * 2021-02-05 2022-08-11
CN117940620A (zh) * 2021-10-12 2024-04-26 日本碍子株式会社 包含稀土的SiC基板和SiC复合基板
WO2023062850A1 (ja) * 2021-10-12 2023-04-20 日本碍子株式会社 希土類含有ＳｉＣ基板及びＳｉＣ複合基板

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11268995A (ja) * 1998-03-20 1999-10-05 Denso Corp 炭化珪素単結晶の製造方法
JP2007277049A (ja) * 2006-04-07 2007-10-25 Toyota Motor Corp ＳｉＣ単結晶の製造方法
WO2014189008A1 (ja) * 2013-05-20 2014-11-27 日立化成株式会社 炭化珪素単結晶及びその製造方法
JP2017008369A (ja) * 2015-06-22 2017-01-12 トヨタ自動車株式会社 ＳｉＣ結晶の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11268995A (ja) * 1998-03-20 1999-10-05 Denso Corp 炭化珪素単結晶の製造方法
JP2007277049A (ja) * 2006-04-07 2007-10-25 Toyota Motor Corp ＳｉＣ単結晶の製造方法
WO2014189008A1 (ja) * 2013-05-20 2014-11-27 日立化成株式会社 炭化珪素単結晶及びその製造方法
JP2017008369A (ja) * 2015-06-22 2017-01-12 トヨタ自動車株式会社 ＳｉＣ結晶の製造方法

Also Published As

Publication number Publication date
WO2021149235A1 (ja) 2021-07-29
CN114901875A (zh) 2022-08-12
JP7282214B2 (ja) 2023-05-26
US20220328310A1 (en) 2022-10-13

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