JPWO2021149235A1 - - Google Patents
Info
- Publication number
- JPWO2021149235A1 JPWO2021149235A1 JP2021572228A JP2021572228A JPWO2021149235A1 JP WO2021149235 A1 JPWO2021149235 A1 JP WO2021149235A1 JP 2021572228 A JP2021572228 A JP 2021572228A JP 2021572228 A JP2021572228 A JP 2021572228A JP WO2021149235 A1 JPWO2021149235 A1 JP WO2021149235A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2902—Materials being Group IVA materials
- H10P14/2904—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2926—Crystal orientations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
- H10P14/3408—Silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3438—Doping during depositing
- H10P14/3441—Conductivity type
- H10P14/3446—Transition metal elements; Rare earth elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3466—Crystal orientation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
- H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2020/002447 WO2021149235A1 (ja) | 2020-01-24 | 2020-01-24 | 希土類含有ＳｉＣ基板及びＳｉＣエピタキシャル層の製法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021149235A1 true JPWO2021149235A1 (https=) | 2021-07-29 |
| JPWO2021149235A5 JPWO2021149235A5 (https=) | 2022-09-13 |
| JP7282214B2 JP7282214B2 (ja) | 2023-05-26 |
Family
ID=76993173
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021572228A Active JP7282214B2 (ja) | 2020-01-24 | 2020-01-24 | 希土類含有ＳｉＣ基板及びＳｉＣエピタキシャル層の製法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US12424440B2 (https=) |
| JP (1) | JP7282214B2 (https=) |
| CN (1) | CN114901875B (https=) |
| WO (1) | WO2021149235A1 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022168372A1 (ja) * | 2021-02-05 | 2022-08-11 | 日本碍子株式会社 | 希土類含有ＳｉＣ基板及びそれを用いたＳｉＣ複合基板 |
| JP7104266B1 (ja) * | 2021-10-12 | 2022-07-20 | 日本碍子株式会社 | 希土類含有ＳｉＣ基板及びＳｉＣ複合基板 |
| WO2023062850A1 (ja) * | 2021-10-12 | 2023-04-20 | 日本碍子株式会社 | 希土類含有ＳｉＣ基板及びＳｉＣ複合基板 |
| CN120858208A (zh) * | 2023-03-28 | 2025-10-28 | 日本碍子株式会社 | SiC基板及SiC复合基板 |
| WO2025083939A1 (ja) * | 2023-10-17 | 2025-04-24 | 日本碍子株式会社 | ＳｉＣ基板及びＳｉＣ複合基板 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11268995A (ja) * | 1998-03-20 | 1999-10-05 | Denso Corp | 炭化珪素単結晶の製造方法 |
| JP2007277049A (ja) * | 2006-04-07 | 2007-10-25 | Toyota Motor Corp | ＳｉＣ単結晶の製造方法 |
| WO2014189008A1 (ja) * | 2013-05-20 | 2014-11-27 | 日立化成株式会社 | 炭化珪素単結晶及びその製造方法 |
| JP2017008369A (ja) * | 2015-06-22 | 2017-01-12 | トヨタ自動車株式会社 | ＳｉＣ結晶の製造方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU1266253A1 (ru) * | 1984-04-25 | 1996-10-10 | Дагестанский Государственный Университет Им.В.И.Ленина | СПОСОБ ПОЛУЧЕНИЯ ЭПИТАКСИАЛЬНЫХ СЛОЕВ SiC |
| KR100377716B1 (ko) * | 1998-02-25 | 2003-03-26 | 인터내셔널 비지네스 머신즈 코포레이션 | 광학적 방사를 위해 희토류 원소로 도핑된 실리콘 구조체 및 방사방법 |
| WO2007088718A1 (ja) * | 2006-01-31 | 2007-08-09 | Hitachi Metals, Ltd. | Ｒ－Ｆｅ－Ｂ系希土類焼結磁石およびその製造方法 |
| JP6419414B2 (ja) * | 2013-03-22 | 2018-11-07 | 株式会社東芝 | ＳｉＣエピタキシャルウェハおよび半導体装置 |
| US9657409B2 (en) * | 2013-05-02 | 2017-05-23 | Melior Innovations, Inc. | High purity SiOC and SiC, methods compositions and applications |
| JP6122704B2 (ja) | 2013-06-13 | 2017-04-26 | 昭和電工株式会社 | ＳｉＣエピタキシャルウェハ及びその製造方法 |
| JPWO2015072136A1 (ja) * | 2013-11-12 | 2017-03-16 | 新日鐵住金株式会社 | ＳｉＣ単結晶の製造方法 |
| CN107075723A (zh) * | 2014-09-11 | 2017-08-18 | 新日铁住金株式会社 | p型SiC单晶的制造方法 |
| JP6755524B2 (ja) * | 2015-09-30 | 2020-09-16 | 国立研究開発法人産業技術総合研究所 | ｐ型４Ｈ−ＳｉＣ単結晶及びｐ型４Ｈ−ＳｉＣ単結晶の製造方法 |
| JP6748572B2 (ja) * | 2016-12-28 | 2020-09-02 | 昭和電工株式会社 | ｐ型ＳｉＣエピタキシャルウェハ及びその製造方法 |
| JP6762484B2 (ja) | 2017-01-10 | 2020-09-30 | 昭和電工株式会社 | ＳｉＣエピタキシャルウェハ及びその製造方法 |
| JP6935738B2 (ja) * | 2017-12-14 | 2021-09-15 | トヨタ自動車株式会社 | ＳｉＣ単結晶の製造方法 |
| JP6945858B2 (ja) * | 2018-04-26 | 2021-10-06 | 国立研究開発法人産業技術総合研究所 | 炭化珪素エピタキシャルウェハ及び炭化珪素半導体装置 |
| JP7024622B2 (ja) | 2018-06-19 | 2022-02-24 | 株式会社デンソー | 炭化珪素単結晶およびその製造方法 |
-
2020
- 2020-01-24 CN CN202080089055.8A patent/CN114901875B/zh active Active
- 2020-01-24 WO PCT/JP2020/002447 patent/WO2021149235A1/ja not_active Ceased
- 2020-01-24 JP JP2021572228A patent/JP7282214B2/ja active Active
-
2022
- 2022-06-03 US US17/805,234 patent/US12424440B2/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11268995A (ja) * | 1998-03-20 | 1999-10-05 | Denso Corp | 炭化珪素単結晶の製造方法 |
| JP2007277049A (ja) * | 2006-04-07 | 2007-10-25 | Toyota Motor Corp | ＳｉＣ単結晶の製造方法 |
| WO2014189008A1 (ja) * | 2013-05-20 | 2014-11-27 | 日立化成株式会社 | 炭化珪素単結晶及びその製造方法 |
| JP2017008369A (ja) * | 2015-06-22 | 2017-01-12 | トヨタ自動車株式会社 | ＳｉＣ結晶の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20220328310A1 (en) | 2022-10-13 |
| JP7282214B2 (ja) | 2023-05-26 |
| US12424440B2 (en) | 2025-09-23 |
| WO2021149235A1 (ja) | 2021-07-29 |
| CN114901875A (zh) | 2022-08-12 |
| CN114901875B (zh) | 2024-05-10 |
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