JP7282214B2 - 希土類含有ＳｉＣ基板及びＳｉＣエピタキシャル層の製法 - Google Patents

希土類含有ＳｉＣ基板及びＳｉＣエピタキシャル層の製法 Download PDF

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JP7282214B2
JP7282214B2 JP2021572228A JP2021572228A JP7282214B2 JP 7282214 B2 JP7282214 B2 JP 7282214B2 JP 2021572228 A JP2021572228 A JP 2021572228A JP 2021572228 A JP2021572228 A JP 2021572228A JP 7282214 B2 JP7282214 B2 JP 7282214B2
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sic
layer
rare earth
concentration
single crystal
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JPWO2021149235A1 (https=
JPWO2021149235A5 (https=
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潔 松島
守道 渡邊
潤 吉川
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NGK Insulators Ltd
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NGK Insulators Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2904—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2926—Crystal orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3408—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3446—Transition metal elements; Rare earth elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3466—Crystal orientation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Recrystallisation Techniques (AREA)
JP2021572228A 2020-01-24 2020-01-24 希土類含有ＳｉＣ基板及びＳｉＣエピタキシャル層の製法 Active JP7282214B2 (ja)

Applications Claiming Priority (1)

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PCT/JP2020/002447 WO2021149235A1 (ja) 2020-01-24 2020-01-24 希土類含有ＳｉＣ基板及びＳｉＣエピタキシャル層の製法

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JPWO2021149235A1 JPWO2021149235A1 (https=) 2021-07-29
JPWO2021149235A5 JPWO2021149235A5 (https=) 2022-09-13
JP7282214B2 true JP7282214B2 (ja) 2023-05-26

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US (1) US12424440B2 (https=)
JP (1) JP7282214B2 (https=)
CN (1) CN114901875B (https=)
WO (1) WO2021149235A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022168372A1 (ja) * 2021-02-05 2022-08-11 日本碍子株式会社 希土類含有ＳｉＣ基板及びそれを用いたＳｉＣ複合基板
JP7104266B1 (ja) * 2021-10-12 2022-07-20 日本碍子株式会社 希土類含有ＳｉＣ基板及びＳｉＣ複合基板
WO2023062850A1 (ja) * 2021-10-12 2023-04-20 日本碍子株式会社 希土類含有ＳｉＣ基板及びＳｉＣ複合基板
CN120858208A (zh) * 2023-03-28 2025-10-28 日本碍子株式会社 SiC基板及SiC复合基板
WO2025083939A1 (ja) * 2023-10-17 2025-04-24 日本碍子株式会社 ＳｉＣ基板及びＳｉＣ複合基板

Citations (3)

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JP2007277049A (ja) 2006-04-07 2007-10-25 Toyota Motor Corp ＳｉＣ単結晶の製造方法
WO2014189008A1 (ja) 2013-05-20 2014-11-27 日立化成株式会社 炭化珪素単結晶及びその製造方法
JP2017008369A (ja) 2015-06-22 2017-01-12 トヨタ自動車株式会社 ＳｉＣ結晶の製造方法

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SU1266253A1 (ru) * 1984-04-25 1996-10-10 Дагестанский Государственный Университет Им.В.И.Ленина СПОСОБ ПОЛУЧЕНИЯ ЭПИТАКСИАЛЬНЫХ СЛОЕВ SiC
KR100377716B1 (ko) * 1998-02-25 2003-03-26 인터내셔널 비지네스 머신즈 코포레이션 광학적 방사를 위해 희토류 원소로 도핑된 실리콘 구조체 및 방사방법
JPH11268995A (ja) * 1998-03-20 1999-10-05 Denso Corp 炭化珪素単結晶の製造方法
WO2007088718A1 (ja) * 2006-01-31 2007-08-09 Hitachi Metals, Ltd. Ｒ－Ｆｅ－Ｂ系希土類焼結磁石およびその製造方法
JP6419414B2 (ja) * 2013-03-22 2018-11-07 株式会社東芝 ＳｉＣエピタキシャルウェハおよび半導体装置
US9657409B2 (en) * 2013-05-02 2017-05-23 Melior Innovations, Inc. High purity SiOC and SiC, methods compositions and applications
JP6122704B2 (ja) 2013-06-13 2017-04-26 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びその製造方法
JPWO2015072136A1 (ja) * 2013-11-12 2017-03-16 新日鐵住金株式会社 ＳｉＣ単結晶の製造方法
CN107075723A (zh) * 2014-09-11 2017-08-18 新日铁住金株式会社 p型SiC单晶的制造方法
JP6755524B2 (ja) * 2015-09-30 2020-09-16 国立研究開発法人産業技術総合研究所 ｐ型４Ｈ−ＳｉＣ単結晶及びｐ型４Ｈ−ＳｉＣ単結晶の製造方法
JP6748572B2 (ja) * 2016-12-28 2020-09-02 昭和電工株式会社 ｐ型ＳｉＣエピタキシャルウェハ及びその製造方法
JP6762484B2 (ja) 2017-01-10 2020-09-30 昭和電工株式会社 ＳｉＣエピタキシャルウェハ及びその製造方法
JP6935738B2 (ja) * 2017-12-14 2021-09-15 トヨタ自動車株式会社 ＳｉＣ単結晶の製造方法
JP6945858B2 (ja) * 2018-04-26 2021-10-06 国立研究開発法人産業技術総合研究所 炭化珪素エピタキシャルウェハ及び炭化珪素半導体装置
JP7024622B2 (ja) 2018-06-19 2022-02-24 株式会社デンソー 炭化珪素単結晶およびその製造方法

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Publication number Priority date Publication date Assignee Title
JP2007277049A (ja) 2006-04-07 2007-10-25 Toyota Motor Corp ＳｉＣ単結晶の製造方法
WO2014189008A1 (ja) 2013-05-20 2014-11-27 日立化成株式会社 炭化珪素単結晶及びその製造方法
JP2017008369A (ja) 2015-06-22 2017-01-12 トヨタ自動車株式会社 ＳｉＣ結晶の製造方法

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US20220328310A1 (en) 2022-10-13
JPWO2021149235A1 (https=) 2021-07-29
US12424440B2 (en) 2025-09-23
WO2021149235A1 (ja) 2021-07-29
CN114901875A (zh) 2022-08-12
CN114901875B (zh) 2024-05-10

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