JP2000058451A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2000058451A5 JP2000058451A5 JP1998223279A JP22327998A JP2000058451A5 JP 2000058451 A5 JP2000058451 A5 JP 2000058451A5 JP 1998223279 A JP1998223279 A JP 1998223279A JP 22327998 A JP22327998 A JP 22327998A JP 2000058451 A5 JP2000058451 A5 JP 2000058451A5
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- buffer layer
- boron phosphide
- less
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 claims 14
- 239000004065 semiconductor Substances 0.000 claims 8
- FFBGYFUYJVKRNV-UHFFFAOYSA-N boranylidynephosphane Chemical compound P#B FFBGYFUYJVKRNV-UHFFFAOYSA-N 0.000 claims 7
- 150000001875 compounds Chemical class 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 4
- 150000004767 nitrides Chemical class 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 239000000178 monomer Substances 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 238000010030 laminating Methods 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22327998A JP4238385B2 (ja) | 1998-08-06 | 1998-08-06 | 化合物半導体素子およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22327998A JP4238385B2 (ja) | 1998-08-06 | 1998-08-06 | 化合物半導体素子およびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000058451A JP2000058451A (ja) | 2000-02-25 |
| JP2000058451A5 true JP2000058451A5 (https=) | 2005-08-04 |
| JP4238385B2 JP4238385B2 (ja) | 2009-03-18 |
Family
ID=16795646
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22327998A Expired - Fee Related JP4238385B2 (ja) | 1998-08-06 | 1998-08-06 | 化合物半導体素子およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4238385B2 (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6984851B2 (en) | 2000-06-21 | 2006-01-10 | Showa Denko Kabushiki Kaisha | Group-III nitride semiconductor light-emitting diode, light-emitting diode lamp, light source, electrode for group-III nitride semiconductor light-emitting diode, and method for producing the electrode |
| WO2002013245A1 (en) * | 2000-08-04 | 2002-02-14 | The Regents Of The University Of California | Method of controlling stress in gallium nitride films deposited on substrates |
| JP2002270896A (ja) * | 2001-03-14 | 2002-09-20 | Showa Denko Kk | Ｉｉｉ族窒化物半導体発光素子およびその製造方法 |
| US7315050B2 (en) | 2001-05-28 | 2008-01-01 | Showa Denko K.K. | Semiconductor device, semiconductor layer and production method thereof |
| US7479731B2 (en) | 2001-08-20 | 2009-01-20 | Showa Denko K.K. | Multicolor light-emitting lamp and light source |
| JP4876359B2 (ja) * | 2001-09-10 | 2012-02-15 | 昭和電工株式会社 | 化合物半導体素子、その製造方法、発光素子およびトランジスタ |
| US6831293B2 (en) * | 2002-03-19 | 2004-12-14 | Showa Denko Kabushiki Kaisha | P-n junction-type compound semiconductor light-emitting device, production method thereof, lamp and light source |
| KR20050092365A (ko) * | 2002-12-02 | 2005-09-21 | 쇼와 덴코 가부시키가이샤 | 인화붕소 기재 화합물 반도체 소자, 이의 제조 방법 및발광 다이오드 |
| EP1593162A4 (en) * | 2003-02-10 | 2009-01-28 | Showa Denko Kk | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURE, AND LIGHT EMITTING DEVICE |
-
1998
- 1998-08-06 JP JP22327998A patent/JP4238385B2/ja not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1180135C (zh) | 氮化镓晶体的制备方法 | |
| CN100351077C (zh) | 改进的热界面材料 | |
| RU2006127075A (ru) | Способ выращивания монокристалла нитрида на кремниевой пластине, нитридный полупроводниковый светоизлучающий диод, изготовленный с его использованием, и способ такого изготовления | |
| JP2000058451A5 (https=) | ||
| DE69530859D1 (de) | Verfahren zur herstellung einer mehrschicht-solarzelle | |
| JP2003257854A5 (https=) | ||
| TW200428652A (en) | Gallium nitride-based devices and manufacturing process | |
| JP5230116B2 (ja) | 高配向性シリコン薄膜の形成方法、３次元半導体素子の製造方法及び３次元半導体素子 | |
| CN109791970B (zh) | 用于发光器件的波长转换材料 | |
| TW558843B (en) | Production method for semiconductor wafer and III group nitride compound semiconductor device | |
| TW201021124A (en) | Passivation of etched semiconductor structures | |
| JP2000114599A5 (https=) | ||
| JP2000261036A5 (https=) | ||
| JP2001007396A5 (https=) | ||
| JP2004087565A5 (https=) | ||
| JP2000344599A5 (https=) | ||
| JP2000058451A (ja) | 化合物半導体素子およびその製造方法 | |
| WO2012029333A1 (ja) | シリコン薄膜の製造方法、シリコン薄膜太陽電池の製造方法、シリコン薄膜、シリコン薄膜太陽電池 | |
| JP2000269337A5 (https=) | ||
| JP2001308381A5 (https=) | ||
| JP2004307310A (ja) | Ｆｅ−Ｓｉ系薄膜の作製方法及びＦｅ−Ｓｉ系薄膜 | |
| TWM629298U (zh) | 具有2d材料中介層的氮化鎵外延基板 | |
| JP2004006960A5 (ja) | 誘電体膜 | |
| CN103668445A (zh) | 异质外延单晶、异质结太阳能电池及它们的制造方法 | |
| JP2007288173A5 (https=) |