JP2007288173A5 - - Google Patents
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- Publication number
- JP2007288173A5 JP2007288173A5 JP2007071920A JP2007071920A JP2007288173A5 JP 2007288173 A5 JP2007288173 A5 JP 2007288173A5 JP 2007071920 A JP2007071920 A JP 2007071920A JP 2007071920 A JP2007071920 A JP 2007071920A JP 2007288173 A5 JP2007288173 A5 JP 2007288173A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor film
- plane
- crystal
- orientation
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 42
- 239000010408 film Substances 0.000 claims 40
- 239000013078 crystal Substances 0.000 claims 18
- 239000000758 substrate Substances 0.000 claims 12
- 238000004519 manufacturing process Methods 0.000 claims 7
- 238000000034 method Methods 0.000 claims 7
- 229910052710 silicon Inorganic materials 0.000 claims 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 239000003990 capacitor Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007071920A JP5311754B2 (ja) | 2006-03-20 | 2007-03-20 | 結晶性半導体膜、半導体装置及びそれらの作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006077484 | 2006-03-20 | ||
| JP2006077484 | 2006-03-20 | ||
| JP2007071920A JP5311754B2 (ja) | 2006-03-20 | 2007-03-20 | 結晶性半導体膜、半導体装置及びそれらの作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007288173A JP2007288173A (ja) | 2007-11-01 |
| JP2007288173A5 true JP2007288173A5 (https=) | 2010-04-22 |
| JP5311754B2 JP5311754B2 (ja) | 2013-10-09 |
Family
ID=38759599
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007071920A Expired - Fee Related JP5311754B2 (ja) | 2006-03-20 | 2007-03-20 | 結晶性半導体膜、半導体装置及びそれらの作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5311754B2 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG156537A1 (en) | 2008-04-09 | 2009-11-26 | Toshiba Matsushita Display Tec | Methods of laser annealing a semiconductor layer and semiconductor devices produced thereby |
| JP5987174B2 (ja) * | 2011-10-12 | 2016-09-07 | 株式会社Ｊｏｌｅｄ | 薄膜トランジスタ装置 |
| WO2015083042A1 (ja) * | 2013-12-03 | 2015-06-11 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0770479B2 (ja) * | 1985-02-14 | 1995-07-31 | 旭硝子株式会社 | 半導体装置の製造方法 |
| JPS63299322A (ja) * | 1987-05-29 | 1988-12-06 | Sony Corp | 単結晶シリコン膜の形成方法 |
| JP3377160B2 (ja) * | 1996-12-13 | 2003-02-17 | シャープ株式会社 | 半導体装置およびその製造方法 |
| JP4841740B2 (ja) * | 2000-04-26 | 2011-12-21 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2004087535A (ja) * | 2002-08-22 | 2004-03-18 | Sony Corp | 結晶質半導体材料の製造方法および半導体装置の製造方法 |
| JP4593212B2 (ja) * | 2003-09-19 | 2010-12-08 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法、及び半導体装置の作製方法 |
| JP2005285827A (ja) * | 2004-03-26 | 2005-10-13 | Advanced Lcd Technologies Development Center Co Ltd | 半導体薄膜の結晶化方法並びに結晶化装置、薄膜トランジスタ、およびこの薄膜トランジスタを使用した表示装置 |
-
2007
- 2007-03-20 JP JP2007071920A patent/JP5311754B2/ja not_active Expired - Fee Related
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