JP2008085317A5 - - Google Patents

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Publication number
JP2008085317A5
JP2008085317A5 JP2007223982A JP2007223982A JP2008085317A5 JP 2008085317 A5 JP2008085317 A5 JP 2008085317A5 JP 2007223982 A JP2007223982 A JP 2007223982A JP 2007223982 A JP2007223982 A JP 2007223982A JP 2008085317 A5 JP2008085317 A5 JP 2008085317A5
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JP
Japan
Prior art keywords
semiconductor film
film
manufacturing
less
laser beam
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JP2007223982A
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English (en)
Japanese (ja)
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JP2008085317A (ja
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Priority to JP2007223982A priority Critical patent/JP2008085317A/ja
Priority claimed from JP2007223982A external-priority patent/JP2008085317A/ja
Publication of JP2008085317A publication Critical patent/JP2008085317A/ja
Publication of JP2008085317A5 publication Critical patent/JP2008085317A5/ja
Withdrawn legal-status Critical Current

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JP2007223982A 2006-08-31 2007-08-30 結晶性半導体膜、及び半導体装置の作製方法 Withdrawn JP2008085317A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007223982A JP2008085317A (ja) 2006-08-31 2007-08-30 結晶性半導体膜、及び半導体装置の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006236078 2006-08-31
JP2007223982A JP2008085317A (ja) 2006-08-31 2007-08-30 結晶性半導体膜、及び半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JP2008085317A JP2008085317A (ja) 2008-04-10
JP2008085317A5 true JP2008085317A5 (https=) 2010-10-07

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Family Applications (1)

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JP2007223982A Withdrawn JP2008085317A (ja) 2006-08-31 2007-08-30 結晶性半導体膜、及び半導体装置の作製方法

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JP (1) JP2008085317A (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130045136A (ko) 2010-06-21 2013-05-03 파나소닉 액정 디스플레이 주식회사 박막 트랜지스터 어레이 장치, 유기 ｅｌ 표시 장치, 및, 박막 트랜지스터 어레이 장치의 제조 방법
CN104966308B (zh) * 2015-06-12 2017-12-01 深圳大学 一种计算激光光束光斑大小的方法
JP6941473B2 (ja) * 2017-04-26 2021-09-29 株式会社日本製鋼所 ディスプレイの製造方法、ディスプレイ及び液晶テレビ
WO2019003417A1 (ja) * 2017-06-30 2019-01-03 シャープ株式会社 可撓性表示装置及び可撓性表示装置の製造方法
KR102470876B1 (ko) * 2021-01-28 2022-11-25 재단법인대구경북과학기술원 모놀리식 3차원 소자의 상부층 고결정화 방법 및 이를 통해 제조된 모놀리식 3차원 소자

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0770479B2 (ja) * 1985-02-14 1995-07-31 旭硝子株式会社 半導体装置の製造方法
JPS63299322A (ja) * 1987-05-29 1988-12-06 Sony Corp 単結晶シリコン膜の形成方法
JPH0897141A (ja) * 1994-09-22 1996-04-12 A G Technol Kk 多結晶半導体層の形成方法、多結晶半導体ｔｆｔ、及びビームアニール装置
JP4827305B2 (ja) * 2001-03-16 2011-11-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3908153B2 (ja) * 2001-11-16 2007-04-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2003124119A (ja) * 2002-08-21 2003-04-25 Semiconductor Energy Lab Co Ltd 薄膜トランジスタ
DE102004042343B4 (de) * 2004-09-01 2008-01-31 Innovavent Gmbh Verfahren und Vorrichtung zur Modifikation von amorphen Halbleitern mittels Laserstrahlung

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