JP2012049397A5 - - Google Patents
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- Publication number
- JP2012049397A5 JP2012049397A5 JP2010191269A JP2010191269A JP2012049397A5 JP 2012049397 A5 JP2012049397 A5 JP 2012049397A5 JP 2010191269 A JP2010191269 A JP 2010191269A JP 2010191269 A JP2010191269 A JP 2010191269A JP 2012049397 A5 JP2012049397 A5 JP 2012049397A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon wafer
- layer portion
- surface layer
- present
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 239000002344 surface layer Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 claims 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 229910052799 carbon Inorganic materials 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 238000003754 machining Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010191269A JP2012049397A (ja) | 2010-08-27 | 2010-08-27 | シリコンウェーハの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010191269A JP2012049397A (ja) | 2010-08-27 | 2010-08-27 | シリコンウェーハの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012049397A JP2012049397A (ja) | 2012-03-08 |
| JP2012049397A5 true JP2012049397A5 (https=) | 2013-08-29 |
Family
ID=45903918
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010191269A Pending JP2012049397A (ja) | 2010-08-27 | 2010-08-27 | シリコンウェーハの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2012049397A (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6573163B2 (ja) * | 2015-08-28 | 2019-09-11 | 国立大学法人九州大学 | 不純物導入装置、不純物導入方法及び半導体装置の製造方法 |
| JP2017175145A (ja) * | 2017-05-01 | 2017-09-28 | 株式会社Sumco | 半導体エピタキシャルウェーハの製造方法、半導体エピタキシャルウェーハ、および固体撮像素子の製造方法 |
| JP6711320B2 (ja) * | 2017-06-26 | 2020-06-17 | 株式会社Sumco | シリコンウェーハ |
| KR102880042B1 (ko) * | 2021-12-20 | 2025-11-10 | 주식회사 에이치피에스피 | 웨이퍼의 박막에 대한 탄소 도핑 방법 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61240638A (ja) * | 1985-04-18 | 1986-10-25 | Fujitsu Ltd | 半導体装置の製法 |
| JPS6427231A (en) * | 1986-06-30 | 1989-01-30 | Nec Corp | Manufacture of semiconductor device |
| JPS6325933A (ja) * | 1986-07-17 | 1988-02-03 | Nec Corp | シリコン基板の歪付け方法 |
| JPS6441210A (en) * | 1987-08-07 | 1989-02-13 | Nec Corp | Manufacture of sic thin-film |
| JPH01297813A (ja) * | 1988-05-25 | 1989-11-30 | Sony Corp | シリコンカーバイドの製造方法 |
| JP2004179356A (ja) * | 2002-11-27 | 2004-06-24 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法及び半導体装置 |
| JP4723181B2 (ja) * | 2003-12-12 | 2011-07-13 | パナソニック株式会社 | 半導体ウェーハ |
| JP4943636B2 (ja) * | 2004-03-25 | 2012-05-30 | エルピーダメモリ株式会社 | 半導体装置及びその製造方法 |
| JP2008258346A (ja) * | 2007-04-04 | 2008-10-23 | Sony Corp | 固体撮像装置の製造方法 |
| JP5439801B2 (ja) * | 2007-12-13 | 2014-03-12 | 株式会社Ｓｕｍｃｏ | エピタキシャルウェーハ及びその製造方法 |
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2010
- 2010-08-27 JP JP2010191269A patent/JP2012049397A/ja active Pending