JPWO2023062850A5 - - Google Patents
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- Publication number
- JPWO2023062850A5 JPWO2023062850A5 JP2022535220A JP2022535220A JPWO2023062850A5 JP WO2023062850 A5 JPWO2023062850 A5 JP WO2023062850A5 JP 2022535220 A JP2022535220 A JP 2022535220A JP 2022535220 A JP2022535220 A JP 2022535220A JP WO2023062850 A5 JPWO2023062850 A5 JP WO2023062850A5
- Authority
- JP
- Japan
- Prior art keywords
- rare earth
- substrate according
- concentration
- sic substrate
- containing sic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052761 rare earth metal Inorganic materials 0.000 claims 14
- 239000000758 substrate Substances 0.000 claims 12
- 150000002910 rare earth metals Chemical group 0.000 claims 9
- 239000013078 crystal Substances 0.000 claims 2
- 239000002131 composite material Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021167477 | 2021-10-12 | ||
| JP2021167477 | 2021-10-12 | ||
| PCT/JP2021/047648 WO2023062850A1 (ja) | 2021-10-12 | 2021-12-22 | 希土類含有ＳｉＣ基板及びＳｉＣ複合基板 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP7104266B1 JP7104266B1 (ja) | 2022-07-20 |
| JPWO2023062850A1 JPWO2023062850A1 (https=) | 2023-04-20 |
| JPWO2023062850A5 true JPWO2023062850A5 (https=) | 2023-09-20 |
Family
ID=82482455
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022535220A Active JP7104266B1 (ja) | 2021-10-12 | 2021-12-22 | 希土類含有ＳｉＣ基板及びＳｉＣ複合基板 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20240250127A1 (https=) |
| EP (1) | EP4417739A4 (https=) |
| JP (1) | JP7104266B1 (https=) |
| CN (1) | CN117940620A (https=) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6507046B2 (en) * | 2001-05-11 | 2003-01-14 | Cree, Inc. | High-resistivity silicon carbide substrate for semiconductor devices with high break down voltage |
| WO2021149235A1 (ja) * | 2020-01-24 | 2021-07-29 | 日本碍子株式会社 | 希土類含有ＳｉＣ基板及びＳｉＣエピタキシャル層の製法 |
| WO2021149598A1 (ja) * | 2020-01-24 | 2021-07-29 | 日本碍子株式会社 | 二軸配向ＳｉＣ複合基板及び半導体デバイス用複合基板 |
-
2021
- 2021-12-22 CN CN202180102294.7A patent/CN117940620A/zh active Pending
- 2021-12-22 JP JP2022535220A patent/JP7104266B1/ja active Active
- 2021-12-22 EP EP21960703.3A patent/EP4417739A4/en active Pending
-
2024
- 2024-02-14 US US18/441,143 patent/US20240250127A1/en active Pending
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