JP2007194247A5 - - Google Patents

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Publication number
JP2007194247A5
JP2007194247A5 JP2006008391A JP2006008391A JP2007194247A5 JP 2007194247 A5 JP2007194247 A5 JP 2007194247A5 JP 2006008391 A JP2006008391 A JP 2006008391A JP 2006008391 A JP2006008391 A JP 2006008391A JP 2007194247 A5 JP2007194247 A5 JP 2007194247A5
Authority
JP
Japan
Prior art keywords
support substrate
semiconductor layer
compound semiconductor
crystal
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006008391A
Other languages
English (en)
Japanese (ja)
Other versions
JP4952883B2 (ja
JP2007194247A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2006008391A priority Critical patent/JP4952883B2/ja
Priority claimed from JP2006008391A external-priority patent/JP4952883B2/ja
Publication of JP2007194247A publication Critical patent/JP2007194247A/ja
Publication of JP2007194247A5 publication Critical patent/JP2007194247A5/ja
Application granted granted Critical
Publication of JP4952883B2 publication Critical patent/JP4952883B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2006008391A 2006-01-17 2006-01-17 半導体発光素子 Expired - Fee Related JP4952883B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006008391A JP4952883B2 (ja) 2006-01-17 2006-01-17 半導体発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006008391A JP4952883B2 (ja) 2006-01-17 2006-01-17 半導体発光素子

Publications (3)

Publication Number Publication Date
JP2007194247A JP2007194247A (ja) 2007-08-02
JP2007194247A5 true JP2007194247A5 (https=) 2009-02-26
JP4952883B2 JP4952883B2 (ja) 2012-06-13

Family

ID=38449734

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006008391A Expired - Fee Related JP4952883B2 (ja) 2006-01-17 2006-01-17 半導体発光素子

Country Status (1)

Country Link
JP (1) JP4952883B2 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4888276B2 (ja) * 2007-08-09 2012-02-29 三菱電機株式会社 半導体ウエハ装置
DE102007062050B4 (de) * 2007-09-28 2019-06-27 Osram Opto Semiconductors Gmbh Halbleiterlaser und Verfahren zum Herstellen des Halbleiterlasers
DE102008013900A1 (de) * 2008-03-12 2009-09-17 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Vielzahl von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
JP5152520B2 (ja) * 2009-01-28 2013-02-27 国立大学法人北海道大学 半導体発光素子
JP4868004B2 (ja) 2009-02-06 2012-02-01 ソニー株式会社 面発光型半導体レーザおよびその製造方法
JP2011146597A (ja) * 2010-01-15 2011-07-28 Sony Corp 発光素子および表示装置
JP2011198962A (ja) * 2010-03-18 2011-10-06 Toshiba Corp 半導体発光素子の製造方法
JP2022087393A (ja) * 2020-12-01 2022-06-13 ウシオ電機株式会社 Ｌｅｄ素子及びその製造方法
JP7578905B2 (ja) * 2020-12-01 2024-11-07 ウシオ電機株式会社 Ｌｅｄ素子及びその製造方法
WO2025196961A1 (ja) * 2024-03-19 2025-09-25 日本碍子株式会社 貼合せ基板、半導体素子および半導体素子の製造方法
WO2025196960A1 (ja) * 2024-03-19 2025-09-25 日本碍子株式会社 貼合せ基板、半導体素子および半導体素子の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0590117A (ja) * 1991-09-27 1993-04-09 Toshiba Corp 単結晶薄膜半導体装置
JP3230638B2 (ja) * 1993-02-10 2001-11-19 シャープ株式会社 発光ダイオードの製造方法
TW289837B (https=) * 1994-01-18 1996-11-01 Hwelett Packard Co

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