JP4952883B2 - 半導体発光素子 - Google Patents

半導体発光素子 Download PDF

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Publication number
JP4952883B2
JP4952883B2 JP2006008391A JP2006008391A JP4952883B2 JP 4952883 B2 JP4952883 B2 JP 4952883B2 JP 2006008391 A JP2006008391 A JP 2006008391A JP 2006008391 A JP2006008391 A JP 2006008391A JP 4952883 B2 JP4952883 B2 JP 4952883B2
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Japan
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layer
crystal
substrate
multilayer
crystal direction
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JP2006008391A
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Japanese (ja)
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JP2007194247A5 (https=
JP2007194247A (ja
Inventor
倫太郎 幸田
義則 山内
孝彦 河崎
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Sony Corp
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Sony Corp
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Priority to JP2006008391A priority Critical patent/JP4952883B2/ja
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JP2006008391A 2006-01-17 2006-01-17 半導体発光素子 Expired - Fee Related JP4952883B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006008391A JP4952883B2 (ja) 2006-01-17 2006-01-17 半導体発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006008391A JP4952883B2 (ja) 2006-01-17 2006-01-17 半導体発光素子

Publications (3)

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JP2007194247A JP2007194247A (ja) 2007-08-02
JP2007194247A5 JP2007194247A5 (https=) 2009-02-26
JP4952883B2 true JP4952883B2 (ja) 2012-06-13

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Family Applications (1)

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JP2006008391A Expired - Fee Related JP4952883B2 (ja) 2006-01-17 2006-01-17 半導体発光素子

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JP (1) JP4952883B2 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4888276B2 (ja) * 2007-08-09 2012-02-29 三菱電機株式会社 半導体ウエハ装置
DE102007062050B4 (de) * 2007-09-28 2019-06-27 Osram Opto Semiconductors Gmbh Halbleiterlaser und Verfahren zum Herstellen des Halbleiterlasers
DE102008013900A1 (de) * 2008-03-12 2009-09-17 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Vielzahl von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
JP5152520B2 (ja) * 2009-01-28 2013-02-27 国立大学法人北海道大学 半導体発光素子
JP4868004B2 (ja) 2009-02-06 2012-02-01 ソニー株式会社 面発光型半導体レーザおよびその製造方法
JP2011146597A (ja) * 2010-01-15 2011-07-28 Sony Corp 発光素子および表示装置
JP2011198962A (ja) * 2010-03-18 2011-10-06 Toshiba Corp 半導体発光素子の製造方法
JP2022087393A (ja) * 2020-12-01 2022-06-13 ウシオ電機株式会社 Ｌｅｄ素子及びその製造方法
JP7578905B2 (ja) * 2020-12-01 2024-11-07 ウシオ電機株式会社 Ｌｅｄ素子及びその製造方法
WO2025196961A1 (ja) * 2024-03-19 2025-09-25 日本碍子株式会社 貼合せ基板、半導体素子および半導体素子の製造方法
WO2025196960A1 (ja) * 2024-03-19 2025-09-25 日本碍子株式会社 貼合せ基板、半導体素子および半導体素子の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0590117A (ja) * 1991-09-27 1993-04-09 Toshiba Corp 単結晶薄膜半導体装置
JP3230638B2 (ja) * 1993-02-10 2001-11-19 シャープ株式会社 発光ダイオードの製造方法
TW289837B (https=) * 1994-01-18 1996-11-01 Hwelett Packard Co

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JP2007194247A (ja) 2007-08-02

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