JPWO2022004046A5 - - Google Patents
Download PDFInfo
- Publication number
- JPWO2022004046A5 JPWO2022004046A5 JP2022533673A JP2022533673A JPWO2022004046A5 JP WO2022004046 A5 JPWO2022004046 A5 JP WO2022004046A5 JP 2022533673 A JP2022533673 A JP 2022533673A JP 2022533673 A JP2022533673 A JP 2022533673A JP WO2022004046 A5 JPWO2022004046 A5 JP WO2022004046A5
- Authority
- JP
- Japan
- Prior art keywords
- polarity face
- group
- face
- nitride
- growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 6
- 239000013078 crystal Substances 0.000 claims 5
- 229910052795 boron group element Inorganic materials 0.000 claims 3
- 229910052757 nitrogen Inorganic materials 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 2
- 229910002601 GaN Inorganic materials 0.000 claims 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 claims 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020111783 | 2020-06-29 | ||
| JP2020111783 | 2020-06-29 | ||
| PCT/JP2021/006355 WO2022004046A1 (ja) | 2020-06-29 | 2021-02-19 | エピタキシャル結晶成長用自立基板および機能素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022004046A1 JPWO2022004046A1 (https=) | 2022-01-06 |
| JPWO2022004046A5 true JPWO2022004046A5 (https=) | 2024-06-19 |
| JP7670716B2 JP7670716B2 (ja) | 2025-04-30 |
Family
ID=79315241
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022533673A Active JP7670716B2 (ja) | 2020-06-29 | 2021-02-19 | エピタキシャル結晶成長用自立基板および機能素子 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12564023B2 (https=) |
| JP (1) | JP7670716B2 (https=) |
| CN (1) | CN115698394A (https=) |
| DE (1) | DE112021003487B4 (https=) |
| WO (1) | WO2022004046A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2023105952A (ja) * | 2022-01-20 | 2023-08-01 | スタンレー電気株式会社 | 単結晶ＡｌＮ基板、単結晶ＡｌＮ基板を用いた半導体ウェハ、及びこれらの製造方法 |
| WO2023181586A1 (ja) * | 2022-03-25 | 2023-09-28 | 株式会社トクヤマ | 窒化アルミニウム単結晶基板、及び窒化アルミニウム単結晶基板の製造方法 |
| WO2025220294A1 (ja) * | 2024-04-16 | 2025-10-23 | パナソニックホールディングス株式会社 | Ｉｉｉ族窒化物結晶の製造方法 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002356398A (ja) * | 2001-06-01 | 2002-12-13 | Sumitomo Electric Ind Ltd | 窒化ガリウムウエハ |
| JP3534115B1 (ja) | 2003-04-02 | 2004-06-07 | 住友電気工業株式会社 | エッジ研磨した窒化物半導体基板とエッジ研磨したＧａＮ自立基板及び窒化物半導体基板のエッジ加工方法 |
| JP4232605B2 (ja) | 2003-10-30 | 2009-03-04 | 住友電気工業株式会社 | 窒化物半導体基板の製造方法と窒化物半導体基板 |
| TW200707799A (en) * | 2005-04-21 | 2007-02-16 | Aonex Technologies Inc | Bonded intermediate substrate and method of making same |
| JP2006347776A (ja) * | 2005-06-13 | 2006-12-28 | Sumitomo Metal Mining Co Ltd | サファイア基板およびその製造方法 |
| JP4696935B2 (ja) | 2006-01-27 | 2011-06-08 | 日立電線株式会社 | Ｉｉｉ−ｖ族窒化物系半導体基板及びｉｉｉ−ｖ族窒化物系発光素子 |
| JP2007284283A (ja) * | 2006-04-14 | 2007-11-01 | Hitachi Cable Ltd | ＧａＮ単結晶基板の加工方法及びＧａＮ単結晶基板 |
| FR2917232B1 (fr) * | 2007-06-06 | 2009-10-09 | Soitec Silicon On Insulator | Procede de fabrication d'une structure pour epitaxie sans zone d'exclusion. |
| JP4794527B2 (ja) | 2007-10-05 | 2011-10-19 | 株式会社フジクラ | 半導体装置及びその製造方法 |
| JP2009126727A (ja) | 2007-11-20 | 2009-06-11 | Sumitomo Electric Ind Ltd | ＧａＮ基板の製造方法、ＧａＮ基板及び半導体デバイス |
| JP4404162B2 (ja) * | 2008-02-27 | 2010-01-27 | 住友電気工業株式会社 | 窒化物半導体ウエハ− |
| JP4395812B2 (ja) * | 2008-02-27 | 2010-01-13 | 住友電気工業株式会社 | 窒化物半導体ウエハ−加工方法 |
| JP2011077508A (ja) * | 2009-09-02 | 2011-04-14 | Mitsubishi Chemicals Corp | 窒化物半導体基板の製造方法 |
| JP5146432B2 (ja) * | 2009-09-29 | 2013-02-20 | 豊田合成株式会社 | Ｉｉｉ族窒化物系化合物半導体のエピタキシャル成長方法及びｉｉｉ族窒化物系化合物半導体素子の製造方法 |
| JP2010045397A (ja) * | 2009-11-17 | 2010-02-25 | Sumitomo Electric Ind Ltd | 窒化ガリウムウエハ |
| JP5737189B2 (ja) * | 2010-01-15 | 2015-06-17 | 三菱化学株式会社 | 単結晶基板、それを用いて得られるｉｉｉ族窒化物結晶及びｉｉｉ族窒化物結晶の製造方法 |
| JP5613072B2 (ja) * | 2011-01-31 | 2014-10-22 | 新電元工業株式会社 | 半導体ウエハーのダイシング方法 |
| DE102013210057A1 (de) * | 2013-05-29 | 2014-12-04 | Siltronic Ag | Verfahren zur Politur der Kante einer Halbleiterscheibe |
-
2021
- 2021-02-19 DE DE112021003487.1T patent/DE112021003487B4/de active Active
- 2021-02-19 JP JP2022533673A patent/JP7670716B2/ja active Active
- 2021-02-19 WO PCT/JP2021/006355 patent/WO2022004046A1/ja not_active Ceased
- 2021-02-19 CN CN202180043074.1A patent/CN115698394A/zh active Pending
-
2022
- 2022-12-20 US US18/068,830 patent/US12564023B2/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPWO2022004046A5 (https=) | ||
| USD1096689S1 (en) | Light element for a loudspeaker | |
| Yoshida et al. | Epitaxial growth of aluminum nitride films on sapphire by reactive evaporation | |
| USD932339S1 (en) | Combined bracelet and clasp | |
| RU2009128751A (ru) | Сапфировые подложки и способы их изготовления | |
| TWD205258S (zh) | 食品罐 | |
| JP2000228367A (ja) | ＧａＮ膜の製造方法 | |
| USD783413S1 (en) | Plastic can liner film with repeating surface pattern | |
| WO2006099138A3 (en) | Technique for the growth of planar semi-polar gallium nitride | |
| TWD202743S (zh) | 食品罐 | |
| WO2009035095A1 (ja) | エピタキシャルＳｉＣ単結晶基板及びエピタキシャルＳｉＣ単結晶基板の製造方法 | |
| EP1975984A3 (en) | Compound semiconductor device including ain layer of controlled skewness | |
| CA2467318A1 (en) | Fasteners for composite material | |
| JP2006524427A5 (https=) | ||
| WO2017121232A1 (zh) | 氮化物底层及其制作方法 | |
| USD928989S1 (en) | Shingle | |
| TWD224339S (zh) | 植物用固定夾 | |
| US20120043528A1 (en) | Homo-material heterophased quantum well | |
| WO2015043099A1 (zh) | 形成截面为多边形的具有辨识或倒角的晶棒、衬底方法及晶棒和衬底 | |
| EP4451489A3 (en) | Monolithically integrated gain element | |
| JP2008290919A5 (https=) | ||
| SE9702220D0 (sv) | A semiconductor device with a junction termination and a method for production thereof | |
| TW200603445A (en) | Gallium nitride-based semiconductor stacked structure, production method thereof, and compound semiconductor and light-emitting device each using the stacked structure | |
| JP2018170491A5 (https=) | ||
| TW200633266A (en) | Gallium nitride-based semiconductor stacked structure, method for fabrication thereof, gallium nitride-based semiconductor device and lamp using the device |