JPWO2022004046A1 - - Google Patents
Info
- Publication number
- JPWO2022004046A1 JPWO2022004046A1 JP2022533673A JP2022533673A JPWO2022004046A1 JP WO2022004046 A1 JPWO2022004046 A1 JP WO2022004046A1 JP 2022533673 A JP2022533673 A JP 2022533673A JP 2022533673 A JP2022533673 A JP 2022533673A JP WO2022004046 A1 JPWO2022004046 A1 JP WO2022004046A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P90/12—Preparing bulk and homogeneous wafers
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Led Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020111783 | 2020-06-29 | ||
| JP2020111783 | 2020-06-29 | ||
| PCT/JP2021/006355 WO2022004046A1 (ja) | 2020-06-29 | 2021-02-19 | エピタキシャル結晶成長用自立基板および機能素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022004046A1 true JPWO2022004046A1 (https=) | 2022-01-06 |
| JPWO2022004046A5 JPWO2022004046A5 (https=) | 2024-06-19 |
| JP7670716B2 JP7670716B2 (ja) | 2025-04-30 |
Family
ID=79315241
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022533673A Active JP7670716B2 (ja) | 2020-06-29 | 2021-02-19 | エピタキシャル結晶成長用自立基板および機能素子 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12564023B2 (https=) |
| JP (1) | JP7670716B2 (https=) |
| CN (1) | CN115698394A (https=) |
| DE (1) | DE112021003487B4 (https=) |
| WO (1) | WO2022004046A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2023105952A (ja) * | 2022-01-20 | 2023-08-01 | スタンレー電気株式会社 | 単結晶ＡｌＮ基板、単結晶ＡｌＮ基板を用いた半導体ウェハ、及びこれらの製造方法 |
| WO2023181586A1 (ja) * | 2022-03-25 | 2023-09-28 | 株式会社トクヤマ | 窒化アルミニウム単結晶基板、及び窒化アルミニウム単結晶基板の製造方法 |
| WO2025220294A1 (ja) * | 2024-04-16 | 2025-10-23 | パナソニックホールディングス株式会社 | Ｉｉｉ族窒化物結晶の製造方法 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002356398A (ja) * | 2001-06-01 | 2002-12-13 | Sumitomo Electric Ind Ltd | 窒化ガリウムウエハ |
| JP2004319951A (ja) * | 2003-04-02 | 2004-11-11 | Sumitomo Electric Ind Ltd | エッジ研磨した窒化物半導体基板とエッジ研磨したＧａＮ自立基板及び窒化物半導体基板のエッジ加工方法 |
| JP2005136167A (ja) * | 2003-10-30 | 2005-05-26 | Sumitomo Electric Ind Ltd | 窒化物半導体基板の製造方法と窒化物半導体基板 |
| JP2007284283A (ja) * | 2006-04-14 | 2007-11-01 | Hitachi Cable Ltd | ＧａＮ単結晶基板の加工方法及びＧａＮ単結晶基板 |
| JP2011077508A (ja) * | 2009-09-02 | 2011-04-14 | Mitsubishi Chemicals Corp | 窒化物半導体基板の製造方法 |
| JP2013173675A (ja) * | 2010-01-15 | 2013-09-05 | Mitsubishi Chemicals Corp | 単結晶基板、それを用いて得られるｉｉｉ族窒化物結晶及びｉｉｉ族窒化物結晶の製造方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200707799A (en) * | 2005-04-21 | 2007-02-16 | Aonex Technologies Inc | Bonded intermediate substrate and method of making same |
| JP2006347776A (ja) * | 2005-06-13 | 2006-12-28 | Sumitomo Metal Mining Co Ltd | サファイア基板およびその製造方法 |
| JP4696935B2 (ja) | 2006-01-27 | 2011-06-08 | 日立電線株式会社 | Ｉｉｉ−ｖ族窒化物系半導体基板及びｉｉｉ−ｖ族窒化物系発光素子 |
| FR2917232B1 (fr) * | 2007-06-06 | 2009-10-09 | Soitec Silicon On Insulator | Procede de fabrication d'une structure pour epitaxie sans zone d'exclusion. |
| JP4794527B2 (ja) | 2007-10-05 | 2011-10-19 | 株式会社フジクラ | 半導体装置及びその製造方法 |
| JP2009126727A (ja) | 2007-11-20 | 2009-06-11 | Sumitomo Electric Ind Ltd | ＧａＮ基板の製造方法、ＧａＮ基板及び半導体デバイス |
| JP4404162B2 (ja) * | 2008-02-27 | 2010-01-27 | 住友電気工業株式会社 | 窒化物半導体ウエハ− |
| JP4395812B2 (ja) * | 2008-02-27 | 2010-01-13 | 住友電気工業株式会社 | 窒化物半導体ウエハ−加工方法 |
| JP5146432B2 (ja) * | 2009-09-29 | 2013-02-20 | 豊田合成株式会社 | Ｉｉｉ族窒化物系化合物半導体のエピタキシャル成長方法及びｉｉｉ族窒化物系化合物半導体素子の製造方法 |
| JP2010045397A (ja) * | 2009-11-17 | 2010-02-25 | Sumitomo Electric Ind Ltd | 窒化ガリウムウエハ |
| JP5613072B2 (ja) * | 2011-01-31 | 2014-10-22 | 新電元工業株式会社 | 半導体ウエハーのダイシング方法 |
| DE102013210057A1 (de) * | 2013-05-29 | 2014-12-04 | Siltronic Ag | Verfahren zur Politur der Kante einer Halbleiterscheibe |
-
2021
- 2021-02-19 DE DE112021003487.1T patent/DE112021003487B4/de active Active
- 2021-02-19 JP JP2022533673A patent/JP7670716B2/ja active Active
- 2021-02-19 WO PCT/JP2021/006355 patent/WO2022004046A1/ja not_active Ceased
- 2021-02-19 CN CN202180043074.1A patent/CN115698394A/zh active Pending
-
2022
- 2022-12-20 US US18/068,830 patent/US12564023B2/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002356398A (ja) * | 2001-06-01 | 2002-12-13 | Sumitomo Electric Ind Ltd | 窒化ガリウムウエハ |
| JP2004319951A (ja) * | 2003-04-02 | 2004-11-11 | Sumitomo Electric Ind Ltd | エッジ研磨した窒化物半導体基板とエッジ研磨したＧａＮ自立基板及び窒化物半導体基板のエッジ加工方法 |
| JP2005136167A (ja) * | 2003-10-30 | 2005-05-26 | Sumitomo Electric Ind Ltd | 窒化物半導体基板の製造方法と窒化物半導体基板 |
| JP2007284283A (ja) * | 2006-04-14 | 2007-11-01 | Hitachi Cable Ltd | ＧａＮ単結晶基板の加工方法及びＧａＮ単結晶基板 |
| JP2011077508A (ja) * | 2009-09-02 | 2011-04-14 | Mitsubishi Chemicals Corp | 窒化物半導体基板の製造方法 |
| JP2013173675A (ja) * | 2010-01-15 | 2013-09-05 | Mitsubishi Chemicals Corp | 単結晶基板、それを用いて得られるｉｉｉ族窒化物結晶及びｉｉｉ族窒化物結晶の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115698394A (zh) | 2023-02-03 |
| DE112021003487T5 (de) | 2023-04-27 |
| US20230119023A1 (en) | 2023-04-20 |
| US12564023B2 (en) | 2026-02-24 |
| DE112021003487B4 (de) | 2025-07-17 |
| WO2022004046A1 (ja) | 2022-01-06 |
| JP7670716B2 (ja) | 2025-04-30 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20231020 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20240611 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20241225 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20250203 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20250414 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20250417 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 7670716 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |