CN115698394A - 外延结晶生长用自立基板及功能元件 - Google Patents

外延结晶生长用自立基板及功能元件 Download PDF

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Publication number
CN115698394A
CN115698394A CN202180043074.1A CN202180043074A CN115698394A CN 115698394 A CN115698394 A CN 115698394A CN 202180043074 A CN202180043074 A CN 202180043074A CN 115698394 A CN115698394 A CN 115698394A
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China
Prior art keywords
self
supporting substrate
polar surface
group
crystal growth
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Pending
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CN202180043074.1A
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English (en)
Chinese (zh)
Inventor
坂井正宏
吉野隆史
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NGK Insulators Ltd
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NGK Insulators Ltd
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Publication of CN115698394A publication Critical patent/CN115698394A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
CN202180043074.1A 2020-06-29 2021-02-19 外延结晶生长用自立基板及功能元件 Pending CN115698394A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020111783 2020-06-29
JP2020-111783 2020-06-29
PCT/JP2021/006355 WO2022004046A1 (ja) 2020-06-29 2021-02-19 エピタキシャル結晶成長用自立基板および機能素子

Publications (1)

Publication Number Publication Date
CN115698394A true CN115698394A (zh) 2023-02-03

Family

ID=79315241

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180043074.1A Pending CN115698394A (zh) 2020-06-29 2021-02-19 外延结晶生长用自立基板及功能元件

Country Status (5)

Country Link
US (1) US12564023B2 (https=)
JP (1) JP7670716B2 (https=)
CN (1) CN115698394A (https=)
DE (1) DE112021003487B4 (https=)
WO (1) WO2022004046A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023105952A (ja) * 2022-01-20 2023-08-01 スタンレー電気株式会社 単結晶ＡｌＮ基板、単結晶ＡｌＮ基板を用いた半導体ウェハ、及びこれらの製造方法
WO2023181586A1 (ja) * 2022-03-25 2023-09-28 株式会社トクヤマ 窒化アルミニウム単結晶基板、及び窒化アルミニウム単結晶基板の製造方法
WO2025220294A1 (ja) * 2024-04-16 2025-10-23 パナソニックホールディングス株式会社 Ｉｉｉ族窒化物結晶の製造方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002356398A (ja) * 2001-06-01 2002-12-13 Sumitomo Electric Ind Ltd 窒化ガリウムウエハ
CN1534734A (zh) * 2003-04-02 2004-10-06 ס�ѵ�����ҵ��ʽ���� 缘经过研磨的氮化物半导体基片及其边缘加工方法
CN1612290A (zh) * 2003-10-30 2005-05-04 住友电气工业株式会社 半导体用氮化物衬底的制备方法及氮化物半导体衬底
JP2006347776A (ja) * 2005-06-13 2006-12-28 Sumitomo Metal Mining Co Ltd サファイア基板およびその製造方法
JP2007284283A (ja) * 2006-04-14 2007-11-01 Hitachi Cable Ltd ＧａＮ単結晶基板の加工方法及びＧａＮ単結晶基板
JP2009231833A (ja) * 2008-02-27 2009-10-08 Sumitomo Electric Ind Ltd 窒化物半導体ウエハ−
JP2012160575A (ja) * 2011-01-31 2012-08-23 Shindengen Electric Mfg Co Ltd 半導体ウエハーのダイシング方法及び半導体ウエハー
CN103122485A (zh) * 2008-02-27 2013-05-29 住友电气工业株式会社 氮化物半导体晶片
JP2013173675A (ja) * 2010-01-15 2013-09-05 Mitsubishi Chemicals Corp 単結晶基板、それを用いて得られるｉｉｉ族窒化物結晶及びｉｉｉ族窒化物結晶の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200707799A (en) * 2005-04-21 2007-02-16 Aonex Technologies Inc Bonded intermediate substrate and method of making same
JP4696935B2 (ja) 2006-01-27 2011-06-08 日立電線株式会社 Ｉｉｉ−ｖ族窒化物系半導体基板及びｉｉｉ−ｖ族窒化物系発光素子
FR2917232B1 (fr) * 2007-06-06 2009-10-09 Soitec Silicon On Insulator Procede de fabrication d'une structure pour epitaxie sans zone d'exclusion.
JP4794527B2 (ja) 2007-10-05 2011-10-19 株式会社フジクラ 半導体装置及びその製造方法
JP2009126727A (ja) 2007-11-20 2009-06-11 Sumitomo Electric Ind Ltd ＧａＮ基板の製造方法、ＧａＮ基板及び半導体デバイス
JP2011077508A (ja) * 2009-09-02 2011-04-14 Mitsubishi Chemicals Corp 窒化物半導体基板の製造方法
JP5146432B2 (ja) * 2009-09-29 2013-02-20 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体のエピタキシャル成長方法及びｉｉｉ族窒化物系化合物半導体素子の製造方法
JP2010045397A (ja) * 2009-11-17 2010-02-25 Sumitomo Electric Ind Ltd 窒化ガリウムウエハ
DE102013210057A1 (de) * 2013-05-29 2014-12-04 Siltronic Ag Verfahren zur Politur der Kante einer Halbleiterscheibe

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002356398A (ja) * 2001-06-01 2002-12-13 Sumitomo Electric Ind Ltd 窒化ガリウムウエハ
CN1534734A (zh) * 2003-04-02 2004-10-06 ס�ѵ�����ҵ��ʽ���� 缘经过研磨的氮化物半导体基片及其边缘加工方法
CN1612290A (zh) * 2003-10-30 2005-05-04 住友电气工业株式会社 半导体用氮化物衬底的制备方法及氮化物半导体衬底
JP2006347776A (ja) * 2005-06-13 2006-12-28 Sumitomo Metal Mining Co Ltd サファイア基板およびその製造方法
JP2007284283A (ja) * 2006-04-14 2007-11-01 Hitachi Cable Ltd ＧａＮ単結晶基板の加工方法及びＧａＮ単結晶基板
JP2009231833A (ja) * 2008-02-27 2009-10-08 Sumitomo Electric Ind Ltd 窒化物半導体ウエハ−
CN103122485A (zh) * 2008-02-27 2013-05-29 住友电气工业株式会社 氮化物半导体晶片
JP2013173675A (ja) * 2010-01-15 2013-09-05 Mitsubishi Chemicals Corp 単結晶基板、それを用いて得られるｉｉｉ族窒化物結晶及びｉｉｉ族窒化物結晶の製造方法
JP2012160575A (ja) * 2011-01-31 2012-08-23 Shindengen Electric Mfg Co Ltd 半導体ウエハーのダイシング方法及び半導体ウエハー

Also Published As

Publication number Publication date
JPWO2022004046A1 (https=) 2022-01-06
DE112021003487T5 (de) 2023-04-27
US20230119023A1 (en) 2023-04-20
US12564023B2 (en) 2026-02-24
DE112021003487B4 (de) 2025-07-17
WO2022004046A1 (ja) 2022-01-06
JP7670716B2 (ja) 2025-04-30

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