WO2022004046A1 - エピタキシャル結晶成長用自立基板および機能素子 - Google Patents

エピタキシャル結晶成長用自立基板および機能素子 Download PDF

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Publication number
WO2022004046A1
WO2022004046A1 PCT/JP2021/006355 JP2021006355W WO2022004046A1 WO 2022004046 A1 WO2022004046 A1 WO 2022004046A1 JP 2021006355 W JP2021006355 W JP 2021006355W WO 2022004046 A1 WO2022004046 A1 WO 2022004046A1
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self
polar surface
group
supporting substrate
substrate
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PCT/JP2021/006355
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English (en)
French (fr)
Japanese (ja)
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正宏 坂井
隆史 吉野
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NGK Insulators Ltd
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NGK Insulators Ltd
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Priority to CN202180043074.1A priority Critical patent/CN115698394A/zh
Priority to JP2022533673A priority patent/JP7670716B2/ja
Priority to DE112021003487.1T priority patent/DE112021003487B4/de
Publication of WO2022004046A1 publication Critical patent/WO2022004046A1/ja
Priority to US18/068,830 priority patent/US12564023B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials

Definitions

  • the present invention relates to a self-supporting substrate for epitaxial crystal growth and a functional element.
  • GaN gallium nitride
  • MQW multiple quantum well layer
  • a gallium nitride layer is formed on a base substrate such as a sapphire substrate, and the base substrate is separated by LLO (laser lift-off) technology or the like to obtain a self-supporting substrate made of gallium nitride.
  • LLO laser lift-off
  • a functional layer such as GaN, AlGaN, or InGaN
  • a light emitting element such as an LED or a power device is manufactured.
  • ultra-bright LEDs and power devices there is an increasing demand for 4-inch and 6-inch large-diameter base substrates.
  • the gallium nitride layer may be significantly warped due to the stress distribution inside the gallium nitride crystal and the dislocation density difference between the front and back surfaces of the gallium nitride layer.
  • the off-angle distribution on the surface of the gallium nitride layer becomes large, so that the function of the functional layer formed on the gallium nitride layer varies depending on the location. For example, in the case of a light emitting element, the variation in the light emitting wavelength may increase depending on the location on the substrate surface.
  • Patent Document 1 As a method for solving such a problem, the proposals described in Patent Documents 1 to 3 have been made. That is, in Patent Document 1, it is attempted to reduce the variation in emission wavelength by keeping the atomic step density of the growth interface substantially constant by using the group 13 element polar surface as the film forming surface (asgrown surface). There is. Patent Document 2 attempts to reduce the variation in emission wavelength by processing the crystal growth surface according to the variation in the crystal axis of the crystal growth surface. In Patent Document 3, a flat surface portion is provided in the central portion of the substrate on the crystal growth surface, and a curved surface portion is provided in the outer peripheral portion thereof, and the off-angle distribution of the flat surface portion is made smaller to reduce the off-angle distribution of the entire substrate.
  • the off-angle distribution on the crystal growth plane (group 13 element polar plane) of the self-supporting substrate can be reduced, thereby reducing the wavelength variation of the light emitting element.
  • a functional element such as a light emitting element structure on the polar surface of the group 13 element of the self-standing substrate, cracks may easily occur in the self-standing substrate and the functional element structure.
  • An object of the present invention is to prevent cracks from being generated in the self-supporting substrate for epitaxial crystal growth made of Group 13 element nitride crystals when the epitaxial crystals are grown.
  • the present invention is a self-supporting substrate for epitaxial crystal growth composed of group 13 elemental nitride crystals selected from gallium nitride, aluminum nitride, indium nitride or a mixed crystal thereof.
  • the self-standing substrate has a nitrogen polar surface and a group 13 element polar surface, the nitrogen polar surface is curved in a convex shape, and a chamfered portion is provided on the outer peripheral portion of the nitrogen polar surface. It relates to a self-supporting substrate for epitaxial crystal growth.
  • the present invention also relates to a functional element having a self-supporting substrate for epitaxial crystal growth and a functional layer provided on the group 13 element polar plane of the self-supporting substrate.
  • the present inventor has investigated various reasons why cracks occur in the process of growing an epitaxial crystal on a self-supporting substrate made of a group 13 element nitride crystal selected from gallium nitride, aluminum nitride, indium nitride or a mixed crystal thereof. , The following findings were obtained.
  • a functional element such as a light emitting element is formed on a group 13 element polar surface of a self-standing substrate. Therefore, at the time of film formation, the nitrogen polar surface of the self-supporting substrate is installed on the susceptor, and the self-supporting substrate is transferred and held.
  • the film thickness of the functional element it is necessary to make the temperature distribution of the group 13 element polar plane on the self-standing substrate uniform. Therefore, it is technical common sense to flatten the nitrogen polar surface of the self-standing substrate.
  • the inventor of the present invention is caused by the fact that by flattening the nitrogen polar surface of the self-supporting substrate, micro-scratches are likely to occur on the nitrogen polar surface of the self-supporting substrate due to gripping and transporting the substrate by tweezers or a robot arm. I thought that cracks would occur. Therefore, I came up with the idea of chamfering the outer peripheral portion of the nitrogen polar surface of the self-standing substrate. However, even when the nitrogen polar surface of the outer peripheral portion of the self-standing substrate is chamfered, the group 13 element nitride formation is hard, so that minute chips and chipping may occur, and cracks in the manufacturing process are completely suppressed. It was difficult.
  • the present inventor has attempted to further shape the nitrogen polar surface into a convex curved shape. This has been difficult to think from the viewpoint of making the heat transfer from the susceptor to the self-supporting substrate uniform.
  • the cracks in the self-supporting substrate and the epitaxial crystal are remarkably reduced. That is, it seems that cracks in the substrate are less likely to occur when the nitrogen polar surface of the self-standing substrate is recessed, but the reality is found to be the opposite.
  • the present invention by reducing chipping and chipping of the end face of the substrate and micro-scratches on the back surface, not only the functional layer epitaxial growth process on the self-standing substrate, but also the device formation process after the functional layer film formation, polishing and the like can be performed.
  • the effect of reducing substrate cracks can be expected in wrapping, thinning process by polishing, transfer between each process, robot transfer in a device equipped with an automatic transfer mechanism, etc.
  • (A) is a schematic diagram showing a self-supporting substrate 21 according to an embodiment of the present invention
  • (b) is a schematic diagram showing a self-supporting substrate 24 of a reference example. It is a bottom view of the self-supporting substrate 21.
  • (A) is a schematic diagram showing the outer peripheral portion of the self-supporting substrate 21 according to the embodiment of the present invention
  • (b) is a schematic diagram showing the outer peripheral portion of the self-supporting substrate 21G.
  • (A), (b) and (c) are diagrams showing the outer peripheral portions of the self-supporting substrates 21A, 21B and 21C, respectively.
  • FIGS. 1A), (b) and (c) are diagrams showing the outer peripheral portions of the self-supporting substrates 21D, 21E and 21F, respectively.
  • FIG. 1 shows a state in which the seed crystal film 2 and the gallium nitride layer 3 are provided on the base substrate 1
  • (b) shows a state in which the gallium nitride layer 3 is separated from the base substrate
  • (c) shows a state. The state where the functional layer is provided on the gallium nitride layer 3A is shown.
  • (A) shows the crystal axis of the base substrate 1, the seed crystal film 2 and the gallium nitride layer 3, and (b) shows the state of irradiating the laser beam A from the base substrate side.
  • (A) shows a state in which the gallium nitride layer 13 and the seed crystal film 12 are separated from the base substrate,
  • (b) shows the surface where the front surface and the back surface of the gallium nitride layer 13 are processed, and (c) is.
  • the self-standing substrate 14 which processed the front surface and the back surface is shown. It is a front view schematically showing the self-supporting substrate which concerns on embodiment of this invention, and the warp of the group 13 element polar plane 17a is different from the warp of a nitrogen polar plane 17b.
  • the present invention is a self-supporting substrate for epitaxial crystal growth composed of group 13 elemental nitride crystals selected from gallium nitride, aluminum nitride, indium nitride or a mixed crystal thereof.
  • the "self-supporting substrate” means a substrate that can be handled as a solid substance without being deformed or damaged by its own weight when handled.
  • the self-supporting substrate of the present invention can be used as a substrate for various semiconductor devices such as light emitting elements.
  • the nitride constituting the group 13 element nitride crystal layer is gallium nitride, aluminum nitride, indium nitride or a mixed crystal thereof.
  • GaN, AlN, InN, Ga x Al 1-x N (1>x> 0), Ga x In 1-x N (1>x> 0), Al x In 1-x N (1>x> 0). >X> 0), Ga x Al y In z N (1>x> 0, 1>y> 0, x + y + z 1), but doped with various n-type dopants or p-type dopants. May be.
  • Preferred examples of the p-type dopant include one or more selected from the group consisting of beryllium (Be), magnesium (Mg), strontium (Sr), and cadmium (Cd).
  • Preferred examples of the n-type dopant include one or more selected from the group consisting of silicon (Si), germanium (Ge), tin (Sn) and oxygen (O).
  • the self-supporting substrate 21 has a group 13 element polar surface 21b and a nitrogen polar surface 21a. Further, the self-standing substrate 21 is provided with a side surface 21e. An epitaxial crystal can be grown on the group 13 element polar surface 21b, and the nitrogen polar surface 21a can be held and transferred by a susceptor or the like.
  • the nitrogen polar surface 21a of the self-standing substrate 21 is warped in a convex shape. This means that when the free-standing substrate is viewed from the nitrogen polar surface side, the nitrogen polar surface is warped so as to protrude from the free-standing substrate.
  • a chamfered portion 21c is provided on the outer peripheral portion 22 of the nitrogen polar surface 21a. Further, in this example, the chamfered portion 21d is provided on the outer peripheral portion 23 of the group 13 element polar surface 21b. Further, the group 13 element polar surface 21b is warped in the direction in which the group 13 element polar surface is recessed when viewed from the self-standing substrate.
  • the radius of curvature of the warp of the nitrogen polar surface is preferably + 5 m or more and + 65 m or less, and more preferably + 7 m or more and + 32 m or less.
  • the value of the radius of curvature is a positive value (+)
  • the value of the radius of curvature is negative (-). Use as a value.
  • the group 13 element polar plane may be warped in a convex shape, may be warped in a concave shape, or may be flat when viewed from the self-supporting substrate.
  • the group 13 element polar surface is warped in the opposite direction to the direction of the warp unevenness of the nitrogen polar surface, that is, warped in a concave shape when viewed from the self-supporting substrate. It is preferable to have. As a result, the variation in the off-angle on the polar plane of the group 13 element can be reduced.
  • the radius of curvature of the warp of the polar surface of the Group 13 element is preferably -3 m or less, and more preferably -7 m or less from the viewpoint of ease of polishing.
  • the value of the radius of curvature is a positive value (+)
  • the value of the radius of curvature is negative. The value is (-).
  • the absolute value of the radius of curvature of the warp of the group 13 element polar surface is made smaller than the absolute value of the radius of curvature of the warp of the nitrogen polar surface.
  • the warp of the group 13 element polar plane is steeper than the warp of the nitrogen polar plane.
  • the variation in the off-angle on the polar surface of nitrogen can be reduced.
  • (absolute value of the radius of curvature of the warp of the group 13 element polar surface) / (absolute value of the radius of curvature of the warp of the nitrogen polar surface) is more preferably 0.7 or less, and 0. It is more preferably 5 or less.
  • (absolute value of the radius of curvature of the warp of the group 13 element polar surface) / (absolute value of the radius of curvature of the warp of the nitrogen polar surface) can be generally 0.01 or more.
  • the self-supporting substrate 24 of the reference example shown in FIG. 1B has a group 13 element polar surface 24b and a nitrogen polar surface 24a.
  • a chamfered portion 24d is provided on the outer peripheral portion 23 of the group 13 element polar surface 24b, and a chamfered portion 24c is provided on the outer peripheral portion 22 of the nitrogen polar surface 24a.
  • the group 13 element polar plane is curved convexly from the self-supporting substrate, and the numerical value of the radius of curvature is positive.
  • the nitrogen polar surface 24a is concavely curved from the self-standing substrate, and the numerical value of the radius of curvature is negative.
  • 24e is a side surface.
  • the group 13 element polar surface is a mirrored surface.
  • the mirror-finished surface is a surface in which the roughness and waviness of the substrate surface are reduced until it is possible to visually confirm that light is reflected and an object is reflected on the processed surface after the substrate surface is processed. Point to. That is, the surface of the substrate after processing is in a state where the roughness and the size of the waviness are sufficiently reduced to a negligible level with respect to the wavelength of visible light. If the mirror surface is processed, epitaxial crystal growth is sufficiently possible on the substrate.
  • the off-angle distribution of the group 13 element polar plane is 0.25 ° or less, whereby the variation in the crystallinity of the epitaxial crystal can be suppressed, and the variation in the characteristics of the functional layer made of the epitaxial crystal can be suppressed. Can be suppressed.
  • the off-angle distribution of the group 13 element polar plane is more preferably 0.1 ° or less. Further, the off-angle distribution of the group 13 element polar plane is often 0.02 ° or more.
  • the warpage of the group 13 element polar plane and the nitrogen polar plane is measured, and the radius of curvature is calculated from the warp.
  • Each warp is measured as follows. First, the warpage of the group 13 element polar plane and the nitrogen polar plane can be measured by a laser displacement meter.
  • a laser displacement meter is a device that measures the displacement of each surface by irradiating each surface with a laser beam. The wavelength of the laser is 655 nm, and a confocal method, a triangular distance measuring method, and an optical interference method can be used as the measuring method depending on the surface roughness.
  • a waveform is obtained except for a range of 3 mm in width from the edge of the substrate.
  • an approximate curve for this waveform is obtained by the least squares method using a quadratic function, and the difference between the maximum value and the minimum value of this approximate curve is measured on two orthogonal axes on the substrate surface, and the two values are measured.
  • the average value is the warp.
  • the radius of curvature R is calculated from this warp value using the following formula.
  • a waveform is obtained except for a range of 3 mm in width from the edge of the substrate.
  • an approximate curve for this waveform is obtained by the least squares method using a quadratic function, and the difference between the maximum value and the minimum value of this approximate curve is measured on two orthogonal axes on the substrate surface, and the two values are measured.
  • the average value is the warp.
  • the radius of curvature R is calculated from this warp value in the same manner as the nitrogen polar surface.
  • the numerical value of the radius of curvature is set as a positive value (+). If it is concave, the value of the radius of curvature is a negative (-) value.
  • a chamfered portion is provided on the outer peripheral portion of the nitrogen polar surface.
  • a chamfered portion 21c is provided on the outer peripheral portion 22 of the nitrogen polar surface 21a of the self-supporting substrate 21 over the entire circumference.
  • the chamfered portion 21c does not have to be provided over the entire circumference of the outer peripheral portion of the nitrogen polar surface, and may be provided at a portion where the carrier (tweezers, robot hand, etc.) of the self-standing substrate comes into contact with the chamfered portion 21c.
  • the carrier tilters, robot hand, etc.
  • the chamfered portion 21c may be provided on the outer peripheral portion 22 in these regions H. Further, the chamfered portion may be provided over the entire width of the outer peripheral portion of the nitrogen polar surface, or may be provided only on a part of the outer peripheral portion. The width of the chamfered portion may be larger than the width of the outer peripheral portion.
  • the chamfered portion 21d is preferably provided on the outer peripheral portion 23 of the group 13 element polar surface 21b in the same manner as the nitrogen polar surface.
  • the chamfered portion 21d does not need to be provided over the entire circumference of the outer peripheral portion 23 of the group 13 element polar surface, but is preferably provided over 50% or more of the outer peripheral portion 23 of the group 13 element polar surface.
  • the chamfered portion may be provided over the entire width of the outer peripheral portion of the group 13 element polar surface, or may be provided only on a part of the outer peripheral portion. The width of the chamfered portion may be larger than the width of the outer peripheral portion.
  • the outer peripheral portion of the group 13 element polar surface refers to a band-shaped region having a width of 1 mm including the outer peripheral edge of the group 13 element polar surface.
  • the outer peripheral portion of the nitrogen polar surface refers to a strip-shaped region having a width of 1 mm including the outer peripheral edge of the nitrogen polar surface.
  • a chamfered portion 21c is provided on the outer peripheral portion 22 of the nitrogen polar surface 21a, and a chamfered portion 21d is provided on the outer peripheral portion 23 of the group 13 element polar surface 21b.
  • each chamfered portion is a flat surface, and each flat surface is inclined with respect to the group 13 element polar surface, the nitrogen polar surface, and the side surface 21e.
  • the side surface 21e is a flat surface.
  • a chamfered portion 21c is provided on the outer peripheral portion 22 of the nitrogen polar surface 21a, and a chamfered portion 21d is provided on the outer peripheral portion 23 of the group 13 element polar surface 21b.
  • each chamfered portion has a protruding curved surface, and each curved surface meets at the outer peripheral edge, and no flat side surface remains.
  • the outer peripheral portion 22 of the nitrogen polar surface 21a and the outer peripheral portion 23 of the group 13 element polar surface 21b are not provided with chamfered portions, so that the side surface 21e is formed. It is flat as a whole.
  • a chamfered portion 21c is provided on the outer peripheral portion 22 of the nitrogen polar surface 21a, and a chamfered portion 21d is provided on the outer peripheral portion 23 of the group 13 element polar surface 21b.
  • the chamfered portions 21c and 21d are inclined with respect to the group 13 element polar plane, the nitrogen polar plane and the side surface 21e.
  • the side surface 21e is a flat surface.
  • a chamfered portion 21c is provided on the outer peripheral portion 22 of the nitrogen polar surface 21a, and a chamfered portion 21d is provided on the outer peripheral portion 23 of the group 13 element polar surface 21b.
  • each chamfered portion is a curved surface (so-called R chamfer) protruding outward.
  • the side surface 21e is a flat surface.
  • a chamfered portion 21c is provided on the outer peripheral portion 22 of the nitrogen polar surface 21a, and a chamfered portion 21d is provided on the outer peripheral portion 23 of the group 13 element polar surface 21b.
  • the chamfered portion 21d is a flat surface and is inclined with respect to the group 13 element polar surface 21b.
  • the chamfered portion 21c is a curved surface (so-called R chamfer) protruding outward.
  • the side surface 21e is a flat surface.
  • a chamfered portion 21c is provided on the outer peripheral portion 22 of the nitrogen polar surface 21a, and a chamfered portion 21d is provided on the outer peripheral portion 23 of the group 13 element polar surface 21b.
  • the chamfered portions 21c and 21d are flat surfaces.
  • the side surface 21e is a curved surface protruding outward.
  • a chamfered portion 21c is provided on the outer peripheral portion 22 of the nitrogen polar surface 21a, and a chamfered portion 21d is provided on the outer peripheral portion 23 of the group 13 element polar surface 21b.
  • the chamfered portions 21c and 21d are curved surfaces (so-called R surfaces) protruding outward.
  • the side surface 21e is also a curved surface protruding outward.
  • the nitrogen polar plane is warped convexly and the Group 13 element polar plane is warped concavely as described above. Thereby, the variation of the off-angle on the polar plane of the group 13 element can be further suppressed. This advantage will be further described.
  • the seed crystal film 2 is formed on the surface 1a of the base substrate 1, and the group 13 element nitride layer is formed on the group 13 element polar surface 2a of the seed crystal film 2.
  • Form 3. the group 13 element nitride layer is separated from the base substrate 1 to obtain a self-supporting substrate 3.
  • a self-supporting substrate may be obtained by irradiating a laser beam from the back surface 1b side of the base substrate 1 as shown by arrow A and separating the group 13 element nitride layer as shown in FIG. 7 (b) by a laser lift-off method.
  • the self-supporting substrate 3 may be obtained by a spontaneous separation method utilizing the difference in heat shrinkage at the time of temperature decrease after the formation of the group 13 element nitride layer, or by slicing the group 13 element nitride using a wire saw or the like.
  • the nitrogen polar surface of the self-standing substrate is attached to the processing platen.
  • the wax thickness is changed by adjusting the load applied to the self-supporting substrate, or a jig is sandwiched between the self-supporting substrate and the processing platen to change the surface shape of the self-standing substrate.
  • the group 13 element polar surface 3a is removed by grinding, lapping, polishing, or the like to thin the plate to a desired thickness and flatten the surface to form a self-supporting substrate.
  • the group 13 element polar surface of the self-standing substrate is attached to the processing platen.
  • the wax thickness is changed by adjusting the load applied to the self-supporting substrate, or a jig is sandwiched between the self-supporting substrate and the processing platen to change the surface shape of the self-standing substrate.
  • the nitrogen polar surface was removed by grinding, lapping, polishing, or the like to thin the plate to a desired thickness and flatten the surface to obtain a self-supporting substrate.
  • the polar surface of the group 13 element is finished and then the polar surface of the nitrogen is finished, but the order may be reversed.
  • the outer peripheral edge of the self-supporting substrate can be chamfered by grinding to obtain the final self-supporting substrate 3A.
  • a crystal is epitaxially grown on the group 13 element polar plane 3a of the self-standing substrate 3A, and a functional layer 4 is formed as shown in FIGS. 7 (c) and 2 to obtain a functional element 5.
  • Reference numeral 3b is a nitrogen polar surface.
  • a substrate having an off-angle in which the crystal axis on the surface of the seed crystal film is tilted from the a-axis, m-axis, and c-axis of the wurtzite structure, is used.
  • This will be described using a base substrate (just substrate) having a temperature of 0 °.
  • FIG. 8A it is assumed that the crystal axis in the substrate 1 is oriented in a certain direction as shown by an arrow B.
  • the crystal axis B is typically the a-axis, m-axis, and c-axis of the wurtzite structure.
  • the crystal axis grows according to the crystal orientation of the underlying substrate as shown by the arrow C. Then, when the group 13 element nitride layer 3 is formed, the crystal axis grows according to the crystal orientation in the seed crystal film as shown by the arrow D.
  • the group 13 element nitride layer is peeled off from the base substrate by irradiating the laser beam as shown by arrow A (FIG. 8 (b)). Then, as schematically shown in FIG. 9A, the group 13 element nitride layer 13 and the seed crystal film 12 warp.
  • the cause of this warpage is, for example, an internal stress due to a difference in defect density or a difference in crystal growth mode between the group 13 element polar surface 13a and the nitrogen polar surface 13b of the gallium nitride layer.
  • the direction of the crystal axis E in the group 13 element nitride layer 13 also changes as a whole.
  • the pressure applied to the group 13 element nitride layer is adjusted and attached to the processing surface plate while leaving a certain degree of warped shape of the gallium nitride layer, and the pair of planes X is formed.
  • the gallium nitride layer is ground and polished so as to be on the front surface and the back surface of the substrate to make a thin plate.
  • the self-supporting substrate 14 as shown in FIG. 9 (c) is obtained.
  • the off angle of the crystal axis E changes greatly depending on the location.
  • the off angle in the group 13 element polar plane means the inclination angle of the crystal axis E with respect to the normal L orthogonal to the group 13 element polar plane.
  • the composition and crystallinity of the functional layer epitaxially grown on the distribution are affected, so that the performance changes depending on the location.
  • the light emitting wavelength fluctuates depending on the location, which causes a decrease in yield.
  • 14b is a nitrogen polar surface.
  • the present inventor makes the amount of warpage of the group 13 element polar surface side of the self-supporting substrate different from the amount of warp of the nitrogen polar surface, and even if there is a warp on the nitrogen polar surface, the off angle on the group 13 element polar surface side.
  • the warp of the group 13 element polar surface 17a and the warp of the nitrogen polar surface 17b of the self-supporting substrate 1 are different.
  • the warp WB of the nitrogen polar surface 17b relatively small, the temperature distribution on the group 13 element polar surface is made small, and the fluctuation of the composition and crystallinity of the functional layer due to this is suppressed, and the tweezers and the robot arm are used. It is considered that it is possible to suppress the occurrence of microscopic scratches on the surface of the nitrogen polar surface that may occur when gripping or transporting the substrate.
  • 17c and 17d are chamfered portions.
  • the thickness distribution (TTV: Total Thickness Variation) of the self-supporting substrate occurs.
  • TTV Total Thickness Variation
  • a large distribution does not occur on the group 13 element polar plane when the functional layer is epitaxially grown on the self-supporting substrate. This is because it utilizes the property that the gallium nitride crystal constituting the self-standing substrate has high thermal conductivity. As a result, no morphology abnormality occurs during film formation of the functional layer, and the emission wavelength shift is sufficiently suppressed.
  • the material of the base substrate is not particularly limited, but sapphire, crystal-oriented alumina, gallium oxide, AlxGa1-xN (0 ⁇ x ⁇ 1), and SiC can be exemplified as suitable examples.
  • AlxGa1-xN (0 ⁇ x ⁇ 1) and InxGa1-xN (0 ⁇ x ⁇ 1) can be exemplified as suitable examples, and gallium nitride is particularly preferable.
  • the material of the seed crystal film is particularly preferably gallium nitride, which has a yellow light emitting effect when observed with a fluorescence microscope. Yellow emission is a peak (yellow emission (YL) or yellow band (YB)) that appears in the range of 2.2 to 2.5 eV in addition to the band-to-band exciton transition (UV).
  • the method for forming the seed crystal film is preferably a metalorganic vapor deposition (MOCVD: Metalorganic Chemical Vapor Deposition) method, a hydride vapor phase deposition (HVPE) method, a pulse excitation deposition (PXD) method, and an MBE. Examples of the method and the sublimation method can be given.
  • MOCVD Metalorganic Chemical Vapor Deposition
  • HVPE hydride vapor phase deposition
  • PXD pulse excitation deposition
  • MBE MBE
  • the metalorganic chemical vapor deposition method is particularly preferred.
  • the growth temperature is preferably 950 to 1200 ° C.
  • the growth direction of the gallium nitride crystal is not particularly limited, but may be the normal direction of the c-plane of the wurtzite structure, or may be the normal direction of each of the a-plane and the m-plane, or the c-plane. , A plane, or a plane inclined from the m plane.
  • the method for producing the gallium nitride layer is not particularly limited, but is limited to a metal organic chemical vapor deposition (MOCVD) method, a hydride vapor phase deposition (HVPE) method, a pulse excited deposition (PXD) method, an MBE method, and a sublimation method.
  • MOCVD metal organic chemical vapor deposition
  • HVPE hydride vapor phase deposition
  • PXD pulse excited deposition
  • MBE method an MBE method
  • sublimation method a sublimation method.
  • the vapor phase method such as, the amonothermal method, and the liquid phase method such as the flux method
  • the thickness of the self-standing substrate after polishing is preferably 300 ⁇ m or more, and preferably 1000 ⁇ m or less.
  • the size of the self-standing substrate is not particularly limited, but is preferably 2 inches, 4 inches, 6 inches, and may be 8 inches or more.
  • the width W of the chamfered portion is not particularly limited on the nitrogen polar plane and the group 13 element polar plane, but from the viewpoint of the present invention, it is 1/20 or more and 3 times or less the thickness of the self-supporting substrate. Is preferable, and a length of 1/10 or more and 1 times or less is more preferable.
  • the height D of the chamfered portion is not particularly limited on the nitrogen polar surface and the group 13 element polar surface, but from the viewpoint of the present invention, when the side surface 21e is a flat surface, the height of the self-supporting substrate is increased.
  • the length is preferably 1/20 or more and 1/2 or less, more preferably 1/10 or more and 2/5 or less, and when the side surface 21e is a curved surface, it is 20 minutes of the thickness of the self-standing substrate.
  • a length of 1 or more and 1/2 or less is preferable.
  • the height D of the chamfered portion is a dimension in the thickness direction of the self-supporting substrate from the starting point of the chamfered portion to the end of the self-supporting substrate.
  • the opening width H of the self-standing substrate end shown in FIG. 3 is preferably 70 ⁇ m or more, and more preferably 100 ⁇ m or more.
  • the opening width H is preferably 1/2 or less, more preferably 2/5 or less of the thickness of the self-standing substrate.
  • the opening width H means the height of each chamfered portion when viewed from the center O of each of the polar surfaces 21a and 21b in the thickness direction of the self-standing substrate.
  • Example 1 The self-supporting substrate 21 shown in FIGS. 1 (a) and 3 (a) was prototyped. Specifically, a seed crystal film made of gallium nitride was provided on a base substrate made of sapphire to form a GaN template (substrate diameter 2.5 inches). The thickness of the seed crystal film was 2 ⁇ m. Next, a gallium nitride layer having a thickness of 1 mm was formed by the Na flux method. Next, the gallium nitride layer was peeled off by a laser lift-off method to obtain a gallium nitride substrate having a thickness of 1 mm. At this time, the gallium nitride substrate was warped.
  • the outer circumference of the gallium nitride substrate was ground to form a circle with a diameter of 2 inches, and then the self-standing substrate had a thickness of 400 ⁇ m by grinding, wrapping, and polishing, and the group 13 element polar surface and the nitrogen polar surface were mirror-processed.
  • the warpage of the gallium polar surface and the nitrogen polar surface was adjusted to the range shown in Table 1 by changing the sticking load on the processing platen and the amount of wax used for sticking.
  • 10 samples were prepared, and each warp was shown in the numerical range of the maximum value and the minimum value. Further, chamfered portions were formed on the outer peripheral portions of the nitrogen polar plane and the gallium polar plane.
  • the width W of the chamfered portion was 200 ⁇ m
  • the opening width H of the chamfered portion was 100 ⁇ m
  • the shape of the chamfered portion was a flat surface as shown in FIG. 4 (b).
  • the height D of the chamfered portion is shown in Table 1 in the numerical range of the maximum value and the minimum value.
  • the off-angle distribution on the gallium polar plane of the obtained self-supporting substrate was evaluated.
  • the LED element structure was grown as an epitaxial film on the gallium polar surface of the self-standing substrate by the MOCVD method, and the performance (surface morphology, emission wavelength) of the LED element structure was evaluated. The results of these evaluations are shown in Table 1.
  • the evaluation method is as follows. (warp) The warpage of the gallium polar surface and the nitrogen polar surface of the self-standing substrate was measured as described above, and the radius of curvature was calculated.
  • chamfered portions are provided on the outer peripheral portions of the gallium polar surface and the nitrogen polar surface, respectively, and the radius of curvature of the nitrogen polar surface is in the range of +24.8 to 46.1 m.
  • the radius of curvature of the gallium polar surface was in the range of -46.1 to -24.8 m.
  • Examples 2 to 4 A self-supporting substrate and an LED structure were prototyped and evaluated in the same manner as in Example 1. The results are shown in Table 1. That is, in Examples 2 to 4, chamfered portions are provided on the outer peripheral portions of the gallium polar surface and the nitrogen polar surface, respectively. The radius of curvature of the nitrogen polar plane and the radius of curvature of the gallium polar plane are shown in Table 1, but the nitrogen polar plane is warped in a convex shape and the gallium polar plane is warped in a concave shape. As a result, no morphology abnormality part of the epitaxial film was observed, the emission wavelength distribution of the LED was relatively small, and the yield of the self-standing substrate without cracks was 100%.
  • Comparative Examples 1 to 3 The self-supporting substrate and the LED structure of each example were prototyped and evaluated in the same manner as in Example 1. The results are shown in Table 2. That is, in Comparative Examples 1 to 3, chamfered portions are not provided on the outer peripheral portions of the gallium polar surface and the nitrogen polar surface, respectively, and the nitrogen polar surface is curved in a convex shape. As a result, no abnormal part of the morphology of the epitaxial film was observed, and the emission wavelength distribution of the LED was relatively small, but the yield of the self-standing substrate without cracks was greatly reduced to 70%.
  • Comparative Examples 4 to 5 The self-supporting substrate and the LED structure of each example were prototyped and evaluated in the same manner as in Example 1. The results are shown in Table 2. That is, in Comparative Examples 4 and 5, chamfered portions are provided on the outer peripheral portions of the gallium polar surface and the nitrogen polar surface, respectively, but the nitrogen polar surface is curved in a concave shape. As a result, no abnormal part of the morphology of the epitaxial film was observed, and the emission wavelength distribution of the LED was relatively small, but the yield of the self-standing substrate without cracks was greatly reduced to 50%.
  • Comparative Examples 6 to 7 The self-supporting substrate and the LED structure of each example were prototyped and evaluated in the same manner as in Example 1. The results are shown in Table 3. Further, in Comparative Examples 6 and 7, chamfered portions are not provided on the outer peripheral portions of the gallium polar surface and the nitrogen polar surface, respectively, and the nitrogen polar surface is curved in a concave shape. As a result, no abnormal part of the morphology of the epitaxial film was observed, and the emission wavelength distribution of the LED was relatively small, but the yield of the self-standing substrate without cracks was greatly reduced to 30%.
  • Comparative Examples 8 to 10 The self-supporting substrate and the LED structure of each example were prototyped and evaluated in the same manner as in Example 1. The results are shown in Table 3. However, in Comparative Examples 8 and 10, the chamfered portions are provided on the outer peripheral portions of the gallium polar surface and the nitrogen polar surface, respectively, but the nitrogen polar surface is flat. As a result, no morphology abnormality part of the epitaxial film was observed, and the emission wavelength distribution of the LED was relatively small, but the yield of the self-standing substrate without cracks was greatly reduced. In Comparative Example 9, chamfered portions are not provided on the outer peripheral portions of the gallium polar surface and the nitrogen polar surface, respectively. Moreover, the nitrogen polar surface is flat. As a result, no morphology abnormality part of the epitaxial film was observed, and the emission wavelength distribution of the LED was relatively small, but the yield of the self-standing substrate without cracks was greatly reduced.
  • Example 11 A self-supporting substrate and an LED structure were prototyped and evaluated in the same manner as in Example 1. The results are shown in Table 3. However, as a self-supporting substrate, a self-supporting substrate 30A having the form shown in FIG. 6A was prototyped. These are substantially the same as the self-standing substrate described in Patent Document 3. That is, the nitrogen polar surface 30a of the self-supporting substrate 30A in FIG. 6A is flat, and the gallium polar surface 30b is also flat, but the outer peripheral portion 31 (width 5 mm) of the gallium polar surface 30b has a concave curved surface. 32 is provided. The side surface 30c of the self-standing substrate is also flat. There is no chamfered part.
  • Example 12 A self-supporting substrate and an LED structure were prototyped and evaluated in the same manner as in Example 1. The results are shown in Table 3. However, as a self-supporting substrate, a self-supporting substrate 30B having the form shown in FIG. 6B was prototyped. That is, the side surface 30c of the self-standing substrate 30B is flat, and the gallium polar surface 30b is also flat, but the outer peripheral portion 31 (width 3 mm) of the gallium polar surface 30b is provided with a concave curved surface 32. Further, the nitrogen polar surface 30d was curved in a convex shape, and the radius of curvature thereof was in the range of +24.8 to 46.1 m. There is no chamfered part.

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