DE112021003487B4 - Freistehendes Substrat für epitaktisches Kristallwachstum und dessen Verwendung in einem funktionellen Bauelement - Google Patents

Freistehendes Substrat für epitaktisches Kristallwachstum und dessen Verwendung in einem funktionellen Bauelement

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Publication number
DE112021003487B4
DE112021003487B4 DE112021003487.1T DE112021003487T DE112021003487B4 DE 112021003487 B4 DE112021003487 B4 DE 112021003487B4 DE 112021003487 T DE112021003487 T DE 112021003487T DE 112021003487 B4 DE112021003487 B4 DE 112021003487B4
Authority
DE
Germany
Prior art keywords
polar surface
substrate
group
freestanding substrate
freestanding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE112021003487.1T
Other languages
German (de)
English (en)
Other versions
DE112021003487T5 (de
Inventor
Masashiro Sakai
Takashi Yoshino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
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Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Publication of DE112021003487T5 publication Critical patent/DE112021003487T5/de
Application granted granted Critical
Publication of DE112021003487B4 publication Critical patent/DE112021003487B4/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
DE112021003487.1T 2020-06-29 2021-02-19 Freistehendes Substrat für epitaktisches Kristallwachstum und dessen Verwendung in einem funktionellen Bauelement Active DE112021003487B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020111783 2020-06-29
JP2020-111783 2020-06-29
PCT/JP2021/006355 WO2022004046A1 (ja) 2020-06-29 2021-02-19 エピタキシャル結晶成長用自立基板および機能素子

Publications (2)

Publication Number Publication Date
DE112021003487T5 DE112021003487T5 (de) 2023-04-27
DE112021003487B4 true DE112021003487B4 (de) 2025-07-17

Family

ID=79315241

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112021003487.1T Active DE112021003487B4 (de) 2020-06-29 2021-02-19 Freistehendes Substrat für epitaktisches Kristallwachstum und dessen Verwendung in einem funktionellen Bauelement

Country Status (5)

Country Link
US (1) US12564023B2 (https=)
JP (1) JP7670716B2 (https=)
CN (1) CN115698394A (https=)
DE (1) DE112021003487B4 (https=)
WO (1) WO2022004046A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023105952A (ja) * 2022-01-20 2023-08-01 スタンレー電気株式会社 単結晶ＡｌＮ基板、単結晶ＡｌＮ基板を用いた半導体ウェハ、及びこれらの製造方法
WO2023181586A1 (ja) * 2022-03-25 2023-09-28 株式会社トクヤマ 窒化アルミニウム単結晶基板、及び窒化アルミニウム単結晶基板の製造方法
WO2025220294A1 (ja) * 2024-04-16 2025-10-23 パナソニックホールディングス株式会社 Ｉｉｉ族窒化物結晶の製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010045397A (ja) * 2009-11-17 2010-02-25 Sumitomo Electric Ind Ltd 窒化ガリウムウエハ
JP2011077100A (ja) * 2009-09-29 2011-04-14 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体のエピタキシャル成長方法及びｉｉｉ族窒化物系化合物半導体素子の製造方法
JP2011077508A (ja) * 2009-09-02 2011-04-14 Mitsubishi Chemicals Corp 窒化物半導体基板の製造方法
DE102013210057A1 (de) * 2013-05-29 2014-12-04 Siltronic Ag Verfahren zur Politur der Kante einer Halbleiterscheibe

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002356398A (ja) * 2001-06-01 2002-12-13 Sumitomo Electric Ind Ltd 窒化ガリウムウエハ
JP3534115B1 (ja) 2003-04-02 2004-06-07 住友電気工業株式会社 エッジ研磨した窒化物半導体基板とエッジ研磨したＧａＮ自立基板及び窒化物半導体基板のエッジ加工方法
JP4232605B2 (ja) 2003-10-30 2009-03-04 住友電気工業株式会社 窒化物半導体基板の製造方法と窒化物半導体基板
TW200707799A (en) * 2005-04-21 2007-02-16 Aonex Technologies Inc Bonded intermediate substrate and method of making same
JP2006347776A (ja) * 2005-06-13 2006-12-28 Sumitomo Metal Mining Co Ltd サファイア基板およびその製造方法
JP4696935B2 (ja) 2006-01-27 2011-06-08 日立電線株式会社 Ｉｉｉ−ｖ族窒化物系半導体基板及びｉｉｉ−ｖ族窒化物系発光素子
JP2007284283A (ja) * 2006-04-14 2007-11-01 Hitachi Cable Ltd ＧａＮ単結晶基板の加工方法及びＧａＮ単結晶基板
FR2917232B1 (fr) * 2007-06-06 2009-10-09 Soitec Silicon On Insulator Procede de fabrication d'une structure pour epitaxie sans zone d'exclusion.
JP4794527B2 (ja) 2007-10-05 2011-10-19 株式会社フジクラ 半導体装置及びその製造方法
JP2009126727A (ja) 2007-11-20 2009-06-11 Sumitomo Electric Ind Ltd ＧａＮ基板の製造方法、ＧａＮ基板及び半導体デバイス
JP4404162B2 (ja) * 2008-02-27 2010-01-27 住友電気工業株式会社 窒化物半導体ウエハ−
JP4395812B2 (ja) * 2008-02-27 2010-01-13 住友電気工業株式会社 窒化物半導体ウエハ−加工方法
JP5737189B2 (ja) * 2010-01-15 2015-06-17 三菱化学株式会社 単結晶基板、それを用いて得られるｉｉｉ族窒化物結晶及びｉｉｉ族窒化物結晶の製造方法
JP5613072B2 (ja) * 2011-01-31 2014-10-22 新電元工業株式会社 半導体ウエハーのダイシング方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011077508A (ja) * 2009-09-02 2011-04-14 Mitsubishi Chemicals Corp 窒化物半導体基板の製造方法
JP2011077100A (ja) * 2009-09-29 2011-04-14 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体のエピタキシャル成長方法及びｉｉｉ族窒化物系化合物半導体素子の製造方法
JP2010045397A (ja) * 2009-11-17 2010-02-25 Sumitomo Electric Ind Ltd 窒化ガリウムウエハ
DE102013210057A1 (de) * 2013-05-29 2014-12-04 Siltronic Ag Verfahren zur Politur der Kante einer Halbleiterscheibe

Also Published As

Publication number Publication date
CN115698394A (zh) 2023-02-03
JPWO2022004046A1 (https=) 2022-01-06
DE112021003487T5 (de) 2023-04-27
US20230119023A1 (en) 2023-04-20
US12564023B2 (en) 2026-02-24
WO2022004046A1 (ja) 2022-01-06
JP7670716B2 (ja) 2025-04-30

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R081 Change of applicant/patentee

Owner name: NGK INSULATORS, LTD., NAGOYA-CITY, JP

Free format text: FORMER OWNER: NGK INSULATORS, LTD., NAGOYA, AICHI, JP

R016 Response to examination communication
R016 Response to examination communication
R018 Grant decision by examination section/examining division