JP7104266B1 - 希土類含有ＳｉＣ基板及びＳｉＣ複合基板 - Google Patents

希土類含有ＳｉＣ基板及びＳｉＣ複合基板 Download PDF

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JP7104266B1
JP7104266B1 JP2022535220A JP2022535220A JP7104266B1 JP 7104266 B1 JP7104266 B1 JP 7104266B1 JP 2022535220 A JP2022535220 A JP 2022535220A JP 2022535220 A JP2022535220 A JP 2022535220A JP 7104266 B1 JP7104266 B1 JP 7104266B1
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sic
substrate
rare earth
layer
single crystal
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Japanese (ja)
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JPWO2023062850A1 (https=
JPWO2023062850A5 (https=
Inventor
里紗 宮風
潔 松島
潤 吉川
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NGK Insulators Ltd
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NGK Insulators Ltd
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Priority claimed from PCT/JP2021/047648 external-priority patent/WO2023062850A1/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2022535220A 2021-10-12 2021-12-22 希土類含有ＳｉＣ基板及びＳｉＣ複合基板 Active JP7104266B1 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021167477 2021-10-12
JP2021167477 2021-10-12
PCT/JP2021/047648 WO2023062850A1 (ja) 2021-10-12 2021-12-22 希土類含有ＳｉＣ基板及びＳｉＣ複合基板

Publications (3)

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JP7104266B1 true JP7104266B1 (ja) 2022-07-20
JPWO2023062850A1 JPWO2023062850A1 (https=) 2023-04-20
JPWO2023062850A5 JPWO2023062850A5 (https=) 2023-09-20

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JP2022535220A Active JP7104266B1 (ja) 2021-10-12 2021-12-22 希土類含有ＳｉＣ基板及びＳｉＣ複合基板

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US (1) US20240250127A1 (https=)
EP (1) EP4417739A4 (https=)
JP (1) JP7104266B1 (https=)
CN (1) CN117940620A (https=)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004533720A (ja) * 2001-05-11 2004-11-04 クリー　インコーポレイテッド 高い降伏電圧を有する半導体デバイスのための高抵抗率炭化珪素基板
WO2021149235A1 (ja) * 2020-01-24 2021-07-29 日本碍子株式会社 希土類含有ＳｉＣ基板及びＳｉＣエピタキシャル層の製法
WO2021149598A1 (ja) * 2020-01-24 2021-07-29 日本碍子株式会社 二軸配向ＳｉＣ複合基板及び半導体デバイス用複合基板

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004533720A (ja) * 2001-05-11 2004-11-04 クリー　インコーポレイテッド 高い降伏電圧を有する半導体デバイスのための高抵抗率炭化珪素基板
WO2021149235A1 (ja) * 2020-01-24 2021-07-29 日本碍子株式会社 希土類含有ＳｉＣ基板及びＳｉＣエピタキシャル層の製法
WO2021149598A1 (ja) * 2020-01-24 2021-07-29 日本碍子株式会社 二軸配向ＳｉＣ複合基板及び半導体デバイス用複合基板

Also Published As

Publication number Publication date
JPWO2023062850A1 (https=) 2023-04-20
US20240250127A1 (en) 2024-07-25
EP4417739A1 (en) 2024-08-21
CN117940620A (zh) 2024-04-26
EP4417739A4 (en) 2025-08-27

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