CN117940620A - 包含稀土的SiC基板和SiC复合基板 - Google Patents

包含稀土的SiC基板和SiC复合基板 Download PDF

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Publication number
CN117940620A
CN117940620A CN202180102294.7A CN202180102294A CN117940620A CN 117940620 A CN117940620 A CN 117940620A CN 202180102294 A CN202180102294 A CN 202180102294A CN 117940620 A CN117940620 A CN 117940620A
Authority
CN
China
Prior art keywords
sic
substrate
rare earth
layer
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180102294.7A
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English (en)
Chinese (zh)
Inventor
宫风里纱
松岛洁
吉川润
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Priority claimed from PCT/JP2021/047648 external-priority patent/WO2023062850A1/ja
Publication of CN117940620A publication Critical patent/CN117940620A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN202180102294.7A 2021-10-12 2021-12-22 包含稀土的SiC基板和SiC复合基板 Pending CN117940620A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021-167477 2021-10-12
JP2021167477 2021-10-12
PCT/JP2021/047648 WO2023062850A1 (ja) 2021-10-12 2021-12-22 希土類含有ＳｉＣ基板及びＳｉＣ複合基板

Publications (1)

Publication Number Publication Date
CN117940620A true CN117940620A (zh) 2024-04-26

Family

ID=82482455

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180102294.7A Pending CN117940620A (zh) 2021-10-12 2021-12-22 包含稀土的SiC基板和SiC复合基板

Country Status (4)

Country Link
US (1) US20240250127A1 (https=)
EP (1) EP4417739A4 (https=)
JP (1) JP7104266B1 (https=)
CN (1) CN117940620A (https=)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6507046B2 (en) * 2001-05-11 2003-01-14 Cree, Inc. High-resistivity silicon carbide substrate for semiconductor devices with high break down voltage
WO2021149235A1 (ja) * 2020-01-24 2021-07-29 日本碍子株式会社 希土類含有ＳｉＣ基板及びＳｉＣエピタキシャル層の製法
WO2021149598A1 (ja) * 2020-01-24 2021-07-29 日本碍子株式会社 二軸配向ＳｉＣ複合基板及び半導体デバイス用複合基板

Also Published As

Publication number Publication date
JPWO2023062850A1 (https=) 2023-04-20
US20240250127A1 (en) 2024-07-25
EP4417739A1 (en) 2024-08-21
EP4417739A4 (en) 2025-08-27
JP7104266B1 (ja) 2022-07-20

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