JPWO2020245695A5 - - Google Patents

Download PDF

Info

Publication number
JPWO2020245695A5
JPWO2020245695A5 JP2021524491A JP2021524491A JPWO2020245695A5 JP WO2020245695 A5 JPWO2020245695 A5 JP WO2020245695A5 JP 2021524491 A JP2021524491 A JP 2021524491A JP 2021524491 A JP2021524491 A JP 2021524491A JP WO2020245695 A5 JPWO2020245695 A5 JP WO2020245695A5
Authority
JP
Japan
Prior art keywords
transistor
layer
semiconductor
semiconductor device
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2021524491A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2020245695A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/IB2020/054923 external-priority patent/WO2020245695A1/ja
Publication of JPWO2020245695A1 publication Critical patent/JPWO2020245695A1/ja
Publication of JPWO2020245695A5 publication Critical patent/JPWO2020245695A5/ja
Priority to JP2025004454A priority Critical patent/JP7769155B2/ja
Priority to JP2025183084A priority patent/JP2026016648A/ja
Withdrawn legal-status Critical Current

Links

JP2021524491A 2019-06-07 2020-05-25 Withdrawn JPWO2020245695A1 (https=)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2025004454A JP7769155B2 (ja) 2019-06-07 2025-01-13 半導体装置
JP2025183084A JP2026016648A (ja) 2019-06-07 2025-10-30 半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019107085 2019-06-07
PCT/IB2020/054923 WO2020245695A1 (ja) 2019-06-07 2020-05-25 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025004454A Division JP7769155B2 (ja) 2019-06-07 2025-01-13 半導体装置

Publications (2)

Publication Number Publication Date
JPWO2020245695A1 JPWO2020245695A1 (https=) 2020-12-10
JPWO2020245695A5 true JPWO2020245695A5 (https=) 2023-05-31

Family

ID=73653084

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2021524491A Withdrawn JPWO2020245695A1 (https=) 2019-06-07 2020-05-25
JP2025004454A Active JP7769155B2 (ja) 2019-06-07 2025-01-13 半導体装置
JP2025183084A Pending JP2026016648A (ja) 2019-06-07 2025-10-30 半導体装置

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2025004454A Active JP7769155B2 (ja) 2019-06-07 2025-01-13 半導体装置
JP2025183084A Pending JP2026016648A (ja) 2019-06-07 2025-10-30 半導体装置

Country Status (4)

Country Link
US (1) US12453073B2 (https=)
JP (3) JPWO2020245695A1 (https=)
KR (1) KR20220017936A (https=)
WO (1) WO2020245695A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11876551B2 (en) * 2021-08-19 2024-01-16 Advanced Semiconductor Engineering, Inc. Electronic module
CN117747592A (zh) * 2022-09-15 2024-03-22 辉达公司 用于gpu芯片和片上系统设备封装的反向嵌入式电源结构
US20250046744A1 (en) * 2023-07-31 2025-02-06 Taiwan Semiconductor Manufacturing Co., Ltd. Bonding layers in semicondcutor packages and methods of forming

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4774205A (en) 1986-06-13 1988-09-27 Massachusetts Institute Of Technology Monolithic integration of silicon and gallium arsenide devices
WO2010061615A1 (ja) * 2008-11-28 2010-06-03 住友化学株式会社 半導体基板の製造方法、半導体基板、電子デバイスの製造方法、および反応装置
US8441047B2 (en) 2009-04-10 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101591613B1 (ko) 2009-10-21 2016-02-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101645680B1 (ko) 2009-11-06 2016-08-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8415731B2 (en) 2010-01-20 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor storage device with integrated capacitor and having transistor overlapping sections
JP5898527B2 (ja) 2011-03-04 2016-04-06 株式会社半導体エネルギー研究所 半導体装置
US9070758B2 (en) 2011-06-20 2015-06-30 Imec CMOS compatible method for manufacturing a HEMT device and the HEMT device thereof
US10032911B2 (en) 2013-12-23 2018-07-24 Intel Corporation Wide band gap transistor on non-native semiconductor substrate
US9660085B2 (en) 2013-12-23 2017-05-23 Intel Coporation Wide band gap transistors on non-native semiconductor substrates and methods of manufacture thereof
JP6607681B2 (ja) 2014-03-07 2019-11-20 株式会社半導体エネルギー研究所 半導体装置
JP2015188071A (ja) * 2014-03-14 2015-10-29 株式会社半導体エネルギー研究所 半導体装置
JP6381004B2 (ja) 2014-03-27 2018-08-29 インテル・コーポレーション マルチデバイスのフレキシブルエレクトロニクスシステムオンチップ（ｓｏｃ）のプロセス統合
JP2016009774A (ja) 2014-06-25 2016-01-18 ルネサスエレクトロニクス株式会社 半導体装置
JP2018201003A (ja) 2017-05-26 2018-12-20 株式会社半導体エネルギー研究所 半導体装置及び電子機器
JP2019009462A (ja) * 2018-09-13 2019-01-17 ルネサスエレクトロニクス株式会社 半導体装置
CN109767714B (zh) * 2019-03-08 2021-01-22 京东方科技集团股份有限公司 光电转换电路及其驱动方法、感光装置、显示装置
JP2025018661A (ja) 2023-07-27 2025-02-06 ダイキン工業株式会社 モータ、回転式圧縮機、及び冷凍装置

Similar Documents

Publication Publication Date Title
JPWO2020245695A5 (https=)
JP2021082832A5 (https=)
JP2022082632A5 (ja) 表示装置
JP2022160439A5 (https=)
JP2007158307A5 (https=)
JPWO2021053473A5 (ja) 半導体装置
JP2013243355A5 (ja) 半導体装置
JP2009060095A5 (https=)
JP2020025115A5 (https=)
JP2007520891A5 (https=)
JP2009158936A5 (https=)
JP2010251732A5 (ja) トランジスタ及び表示装置
JP2011119675A5 (https=)
JP2007165923A5 (https=)
JP2025028103A5 (https=)
JP2009283496A5 (https=)
JP2011243959A5 (https=)
JP2006286954A5 (https=)
SG139632A1 (en) Structure and method to implement dual stressor layers with improved silicide control
JP2008046619A5 (https=)
JP2013175714A5 (ja) 半導体装置
JP2008511173A5 (https=)
JP2013008936A5 (ja) 半導体装置
JP2019169721A5 (https=)
JP2009158941A5 (https=)