KR20220017936A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR20220017936A
KR20220017936A KR1020217041840A KR20217041840A KR20220017936A KR 20220017936 A KR20220017936 A KR 20220017936A KR 1020217041840 A KR1020217041840 A KR 1020217041840A KR 20217041840 A KR20217041840 A KR 20217041840A KR 20220017936 A KR20220017936 A KR 20220017936A
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KR
South Korea
Prior art keywords
transistor
insulator
oxide
conductor
addition
Prior art date
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Pending
Application number
KR1020217041840A
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English (en)
Korean (ko)
Inventor
히토시 쿠니타케
타카유키 이케다
타카히로 후쿠토메
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20220017936A publication Critical patent/KR20220017936A/ko
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H01L27/088—
    • H01L27/105—
    • H01L29/786—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/08—Manufacture or treatment characterised by using material-based technologies using combinations of technologies, e.g. using both Si and SiC technologies or using both Si and Group III-V technologies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate

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  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1020217041840A 2019-06-07 2020-05-25 반도체 장치 Pending KR20220017936A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019107085 2019-06-07
JPJP-P-2019-107085 2019-06-07
PCT/IB2020/054923 WO2020245695A1 (ja) 2019-06-07 2020-05-25 半導体装置

Publications (1)

Publication Number Publication Date
KR20220017936A true KR20220017936A (ko) 2022-02-14

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020217041840A Pending KR20220017936A (ko) 2019-06-07 2020-05-25 반도체 장치

Country Status (4)

Country Link
US (1) US12453073B2 (https=)
JP (3) JPWO2020245695A1 (https=)
KR (1) KR20220017936A (https=)
WO (1) WO2020245695A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11876551B2 (en) * 2021-08-19 2024-01-16 Advanced Semiconductor Engineering, Inc. Electronic module
CN117747592A (zh) * 2022-09-15 2024-03-22 辉达公司 用于gpu芯片和片上系统设备封装的反向嵌入式电源结构
US20250046744A1 (en) * 2023-07-31 2025-02-06 Taiwan Semiconductor Manufacturing Co., Ltd. Bonding layers in semicondcutor packages and methods of forming

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015147835A1 (en) 2014-03-27 2015-10-01 Intel Corporation Multi-device flexible electronics system on a chip (soc) process integration

Family Cites Families (17)

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Publication number Priority date Publication date Assignee Title
US4774205A (en) 1986-06-13 1988-09-27 Massachusetts Institute Of Technology Monolithic integration of silicon and gallium arsenide devices
WO2010061615A1 (ja) * 2008-11-28 2010-06-03 住友化学株式会社 半導体基板の製造方法、半導体基板、電子デバイスの製造方法、および反応装置
US8441047B2 (en) 2009-04-10 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101591613B1 (ko) 2009-10-21 2016-02-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101645680B1 (ko) 2009-11-06 2016-08-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8415731B2 (en) 2010-01-20 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor storage device with integrated capacitor and having transistor overlapping sections
JP5898527B2 (ja) 2011-03-04 2016-04-06 株式会社半導体エネルギー研究所 半導体装置
US9070758B2 (en) 2011-06-20 2015-06-30 Imec CMOS compatible method for manufacturing a HEMT device and the HEMT device thereof
US10032911B2 (en) 2013-12-23 2018-07-24 Intel Corporation Wide band gap transistor on non-native semiconductor substrate
US9660085B2 (en) 2013-12-23 2017-05-23 Intel Coporation Wide band gap transistors on non-native semiconductor substrates and methods of manufacture thereof
JP6607681B2 (ja) 2014-03-07 2019-11-20 株式会社半導体エネルギー研究所 半導体装置
JP2015188071A (ja) * 2014-03-14 2015-10-29 株式会社半導体エネルギー研究所 半導体装置
JP2016009774A (ja) 2014-06-25 2016-01-18 ルネサスエレクトロニクス株式会社 半導体装置
JP2018201003A (ja) 2017-05-26 2018-12-20 株式会社半導体エネルギー研究所 半導体装置及び電子機器
JP2019009462A (ja) * 2018-09-13 2019-01-17 ルネサスエレクトロニクス株式会社 半導体装置
CN109767714B (zh) * 2019-03-08 2021-01-22 京东方科技集团股份有限公司 光电转换电路及其驱动方法、感光装置、显示装置
JP2025018661A (ja) 2023-07-27 2025-02-06 ダイキン工業株式会社 モータ、回転式圧縮機、及び冷凍装置

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Publication number Priority date Publication date Assignee Title
WO2015147835A1 (en) 2014-03-27 2015-10-01 Intel Corporation Multi-device flexible electronics system on a chip (soc) process integration

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
S. Yamazaki et al., "Japanese Journal of Applied Physics", 2014, volume 53, Number 4S, p.04ED18-1-04ED18-10
S. Yamazaki et al., "SID Symposium Digest of Technical Papers", 2012, volume 43, issue 1, p.183-186

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Publication number Publication date
JP2025061222A (ja) 2025-04-10
WO2020245695A1 (ja) 2020-12-10
US20220238525A1 (en) 2022-07-28
JP7769155B2 (ja) 2025-11-12
US12453073B2 (en) 2025-10-21
JP2026016648A (ja) 2026-02-03
JPWO2020245695A1 (https=) 2020-12-10

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