JPWO2020245695A1 - - Google Patents
Info
- Publication number
- JPWO2020245695A1 JPWO2020245695A1 JP2021524491A JP2021524491A JPWO2020245695A1 JP WO2020245695 A1 JPWO2020245695 A1 JP WO2020245695A1 JP 2021524491 A JP2021524491 A JP 2021524491A JP 2021524491 A JP2021524491 A JP 2021524491A JP WO2020245695 A1 JPWO2020245695 A1 JP WO2020245695A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6733—Multi-gate TFTs
- H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/08—Manufacture or treatment characterised by using material-based technologies using combinations of technologies, e.g. using both Si and SiC technologies or using both Si and Group III-V technologies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
- H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025004454A JP7769155B2 (ja) | 2019-06-07 | 2025-01-13 | 半導体装置 |
| JP2025183084A JP2026016648A (ja) | 2019-06-07 | 2025-10-30 | 半導体装置 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019107085 | 2019-06-07 | ||
| PCT/IB2020/054923 WO2020245695A1 (ja) | 2019-06-07 | 2020-05-25 | 半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025004454A Division JP7769155B2 (ja) | 2019-06-07 | 2025-01-13 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2020245695A1 true JPWO2020245695A1 (https=) | 2020-12-10 |
| JPWO2020245695A5 JPWO2020245695A5 (https=) | 2023-05-31 |
Family
ID=73653084
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021524491A Withdrawn JPWO2020245695A1 (https=) | 2019-06-07 | 2020-05-25 | |
| JP2025004454A Active JP7769155B2 (ja) | 2019-06-07 | 2025-01-13 | 半導体装置 |
| JP2025183084A Pending JP2026016648A (ja) | 2019-06-07 | 2025-10-30 | 半導体装置 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025004454A Active JP7769155B2 (ja) | 2019-06-07 | 2025-01-13 | 半導体装置 |
| JP2025183084A Pending JP2026016648A (ja) | 2019-06-07 | 2025-10-30 | 半導体装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US12453073B2 (https=) |
| JP (3) | JPWO2020245695A1 (https=) |
| KR (1) | KR20220017936A (https=) |
| WO (1) | WO2020245695A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11876551B2 (en) * | 2021-08-19 | 2024-01-16 | Advanced Semiconductor Engineering, Inc. | Electronic module |
| CN117747592A (zh) * | 2022-09-15 | 2024-03-22 | 辉达公司 | 用于gpu芯片和片上系统设备封装的反向嵌入式电源结构 |
| US20250046744A1 (en) * | 2023-07-31 | 2025-02-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Bonding layers in semicondcutor packages and methods of forming |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010153845A (ja) * | 2008-11-28 | 2010-07-08 | Sumitomo Chemical Co Ltd | 半導体基板の製造方法、半導体基板、電子デバイスの製造方法、および反応装置 |
| JP2015144284A (ja) * | 2009-11-06 | 2015-08-06 | 株式会社半導体エネルギー研究所 | イメージセンサ |
| JP2015181159A (ja) * | 2014-03-07 | 2015-10-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2015188071A (ja) * | 2014-03-14 | 2015-10-29 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2017501562A (ja) * | 2013-12-23 | 2017-01-12 | インテル・コーポレーション | 非固有半導体基板上の広バンドギャップトランジスタ及びその製造方法 |
| JP2018201003A (ja) * | 2017-05-26 | 2018-12-20 | 株式会社半導体エネルギー研究所 | 半導体装置及び電子機器 |
| JP2019009462A (ja) * | 2018-09-13 | 2019-01-17 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4774205A (en) | 1986-06-13 | 1988-09-27 | Massachusetts Institute Of Technology | Monolithic integration of silicon and gallium arsenide devices |
| US8441047B2 (en) | 2009-04-10 | 2013-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| KR101591613B1 (ko) | 2009-10-21 | 2016-02-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US8415731B2 (en) | 2010-01-20 | 2013-04-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor storage device with integrated capacitor and having transistor overlapping sections |
| JP5898527B2 (ja) | 2011-03-04 | 2016-04-06 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9070758B2 (en) | 2011-06-20 | 2015-06-30 | Imec | CMOS compatible method for manufacturing a HEMT device and the HEMT device thereof |
| US10032911B2 (en) | 2013-12-23 | 2018-07-24 | Intel Corporation | Wide band gap transistor on non-native semiconductor substrate |
| EP3123507A4 (en) * | 2014-03-27 | 2017-12-06 | Intel Corporation | Multi-device flexible electronics system on a chip (soc) process integration |
| JP2016009774A (ja) | 2014-06-25 | 2016-01-18 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| CN109767714B (zh) * | 2019-03-08 | 2021-01-22 | 京东方科技集团股份有限公司 | 光电转换电路及其驱动方法、感光装置、显示装置 |
| JP2025018661A (ja) | 2023-07-27 | 2025-02-06 | ダイキン工業株式会社 | モータ、回転式圧縮機、及び冷凍装置 |
-
2020
- 2020-05-25 US US17/616,441 patent/US12453073B2/en active Active
- 2020-05-25 JP JP2021524491A patent/JPWO2020245695A1/ja not_active Withdrawn
- 2020-05-25 WO PCT/IB2020/054923 patent/WO2020245695A1/ja not_active Ceased
- 2020-05-25 KR KR1020217041840A patent/KR20220017936A/ko active Pending
-
2025
- 2025-01-13 JP JP2025004454A patent/JP7769155B2/ja active Active
- 2025-10-30 JP JP2025183084A patent/JP2026016648A/ja active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010153845A (ja) * | 2008-11-28 | 2010-07-08 | Sumitomo Chemical Co Ltd | 半導体基板の製造方法、半導体基板、電子デバイスの製造方法、および反応装置 |
| JP2015144284A (ja) * | 2009-11-06 | 2015-08-06 | 株式会社半導体エネルギー研究所 | イメージセンサ |
| JP2017501562A (ja) * | 2013-12-23 | 2017-01-12 | インテル・コーポレーション | 非固有半導体基板上の広バンドギャップトランジスタ及びその製造方法 |
| JP2015181159A (ja) * | 2014-03-07 | 2015-10-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2015188071A (ja) * | 2014-03-14 | 2015-10-29 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2018201003A (ja) * | 2017-05-26 | 2018-12-20 | 株式会社半導体エネルギー研究所 | 半導体装置及び電子機器 |
| JP2019009462A (ja) * | 2018-09-13 | 2019-01-17 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20220017936A (ko) | 2022-02-14 |
| JP7769155B2 (ja) | 2025-11-12 |
| US20220238525A1 (en) | 2022-07-28 |
| US12453073B2 (en) | 2025-10-21 |
| JP2026016648A (ja) | 2026-02-03 |
| JP2025061222A (ja) | 2025-04-10 |
| WO2020245695A1 (ja) | 2020-12-10 |
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