JP2019169721A5 - - Google Patents
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- JP2019169721A5 JP2019169721A5 JP2019087064A JP2019087064A JP2019169721A5 JP 2019169721 A5 JP2019169721 A5 JP 2019169721A5 JP 2019087064 A JP2019087064 A JP 2019087064A JP 2019087064 A JP2019087064 A JP 2019087064A JP 2019169721 A5 JP2019169721 A5 JP 2019169721A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- clusters
- oxide semiconductor
- complex oxide
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016074493 | 2016-04-01 | ||
| JP2016074493 | 2016-04-01 | ||
| JP2016075853 | 2016-04-05 | ||
| JP2016075853 | 2016-04-05 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017062226A Division JP7033853B2 (ja) | 2016-04-01 | 2017-03-28 | 複合酸化物半導体、およびその作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019229487A Division JP7077294B2 (ja) | 2016-04-01 | 2019-12-19 | 複合酸化物半導体、半導体装置及び表示装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019169721A JP2019169721A (ja) | 2019-10-03 |
| JP2019169721A5 true JP2019169721A5 (https=) | 2019-11-14 |
| JP6656451B2 JP6656451B2 (ja) | 2020-03-04 |
Family
ID=59961916
Family Applications (6)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017062226A Active JP7033853B2 (ja) | 2016-04-01 | 2017-03-28 | 複合酸化物半導体、およびその作製方法 |
| JP2019087064A Active JP6656451B2 (ja) | 2016-04-01 | 2019-04-30 | 複合酸化物半導体、半導体装置及び表示装置 |
| JP2019229487A Active JP7077294B2 (ja) | 2016-04-01 | 2019-12-19 | 複合酸化物半導体、半導体装置及び表示装置 |
| JP2022081480A Active JP7439163B2 (ja) | 2016-04-01 | 2022-05-18 | 表示装置 |
| JP2024019921A Withdrawn JP2024056861A (ja) | 2016-04-01 | 2024-02-14 | 表示装置 |
| JP2025116691A Pending JP2025142004A (ja) | 2016-04-01 | 2025-07-10 | 複合酸化物半導体 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017062226A Active JP7033853B2 (ja) | 2016-04-01 | 2017-03-28 | 複合酸化物半導体、およびその作製方法 |
Family Applications After (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019229487A Active JP7077294B2 (ja) | 2016-04-01 | 2019-12-19 | 複合酸化物半導体、半導体装置及び表示装置 |
| JP2022081480A Active JP7439163B2 (ja) | 2016-04-01 | 2022-05-18 | 表示装置 |
| JP2024019921A Withdrawn JP2024056861A (ja) | 2016-04-01 | 2024-02-14 | 表示装置 |
| JP2025116691A Pending JP2025142004A (ja) | 2016-04-01 | 2025-07-10 | 複合酸化物半導体 |
Country Status (2)
| Country | Link |
|---|---|
| US (4) | US10388738B2 (https=) |
| JP (6) | JP7033853B2 (https=) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6668455B2 (ja) | 2016-04-01 | 2020-03-18 | 株式会社半導体エネルギー研究所 | 酸化物半導体膜の作製方法 |
| US10461197B2 (en) | 2016-06-03 | 2019-10-29 | Semiconductor Energy Laboratory Co., Ltd. | Sputtering target, oxide semiconductor, oxynitride semiconductor, and transistor |
| KR102403389B1 (ko) | 2016-09-12 | 2022-06-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 전자 기기 |
| WO2019226958A1 (en) | 2018-05-24 | 2019-11-28 | The Research Foundation For The State University Of New York | Capacitive sensor |
| TWI777078B (zh) * | 2018-08-01 | 2022-09-11 | 日本商出光興產股份有限公司 | 結晶構造化合物、氧化物燒結體、濺鍍靶材、結晶質氧化物薄膜、非晶質氧化物薄膜、薄膜電晶體、及電子機器 |
| KR102708746B1 (ko) | 2018-12-19 | 2024-09-20 | 엘지디스플레이 주식회사 | 박막 트랜지스터 및 이를 포함하는 표시장치 |
| CN113519065A (zh) * | 2019-03-01 | 2021-10-19 | 株式会社半导体能源研究所 | 半导体装置 |
| JP7461129B2 (ja) * | 2019-10-17 | 2024-04-03 | 株式会社ジャパンディスプレイ | 半導体装置及び半導体装置の製造方法 |
| KR102401939B1 (ko) * | 2020-07-27 | 2022-05-26 | 한양대학교 산학협력단 | 이종 접합 구조의 금속 산화물 반도체층을 갖는 박막 트랜지스터, 이를 포함하는 디스플레이 장치 및 이의 제조방법 |
| CN115117176A (zh) * | 2022-06-30 | 2022-09-27 | 武汉华星光电半导体显示技术有限公司 | 一种薄膜晶体管及其制备方法 |
Family Cites Families (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009206508A (ja) | 2008-01-31 | 2009-09-10 | Canon Inc | 薄膜トランジスタ及び表示装置 |
| TWI495108B (zh) * | 2008-07-31 | 2015-08-01 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
| JP2010153802A (ja) | 2008-11-20 | 2010-07-08 | Semiconductor Energy Lab Co Ltd | 半導体装置及び半導体装置の作製方法 |
| JP5328414B2 (ja) | 2009-02-25 | 2013-10-30 | 富士フイルム株式会社 | トップゲート型の電界効果型トランジスタ及びその製造方法並びにそれを備えた表示装置 |
| WO2011043218A1 (en) | 2009-10-09 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| KR102220606B1 (ko) * | 2009-11-06 | 2021-03-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| KR20140074404A (ko) | 2009-11-20 | 2014-06-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 트랜지스터 |
| CN102668028B (zh) * | 2009-11-28 | 2015-09-02 | 株式会社半导体能源研究所 | 层叠的氧化物材料、半导体器件、以及用于制造该半导体器件的方法 |
| KR102008754B1 (ko) | 2010-01-24 | 2019-08-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치와 이의 제조 방법 |
| TWI615920B (zh) * | 2010-08-06 | 2018-02-21 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| US8912536B2 (en) * | 2010-11-19 | 2014-12-16 | Samsung Electronics Co., Ltd. | Transistors, methods of manufacturing the same and electronic devices including transistors |
| KR20200052993A (ko) | 2010-12-03 | 2020-05-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막 및 반도체 장치 |
| JP5750063B2 (ja) | 2011-02-10 | 2015-07-15 | 株式会社コベルコ科研 | 酸化物焼結体およびスパッタリングターゲット |
| US20140021038A1 (en) * | 2011-03-01 | 2014-01-23 | Sharp Kabushiki Kaisha | Sputtering target, method for manufacturing the same, and method for manufacturing thin film transistor |
| JP5947099B2 (ja) * | 2011-05-20 | 2016-07-06 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US8952377B2 (en) | 2011-07-08 | 2015-02-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP6257900B2 (ja) * | 2012-02-23 | 2018-01-10 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP6051960B2 (ja) * | 2012-03-19 | 2016-12-27 | 株式会社リコー | 導電性薄膜、導電性薄膜形成用塗布液、電界効果型トランジスタ、及び電界効果型トランジスタの製造方法 |
| CN107591316B (zh) | 2012-05-31 | 2021-06-08 | 株式会社半导体能源研究所 | 半导体装置 |
| JP5972065B2 (ja) | 2012-06-20 | 2016-08-17 | 富士フイルム株式会社 | 薄膜トランジスタの製造方法 |
| JP5654648B2 (ja) | 2012-08-10 | 2015-01-14 | 株式会社半導体エネルギー研究所 | 金属酸化物膜 |
| KR102072099B1 (ko) | 2012-11-08 | 2020-01-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 금속 산화물 막 및 금속 산화물 막의 형성 방법 |
| TWI605593B (zh) * | 2012-11-15 | 2017-11-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| TWI618252B (zh) | 2013-02-12 | 2018-03-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| US9190527B2 (en) | 2013-02-13 | 2015-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of semiconductor device |
| JP6199581B2 (ja) | 2013-03-08 | 2017-09-20 | 株式会社半導体エネルギー研究所 | 金属酸化物膜、及び半導体装置 |
| US9496330B2 (en) * | 2013-08-02 | 2016-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film and semiconductor device |
| JP6383616B2 (ja) | 2013-09-25 | 2018-08-29 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| TWI702187B (zh) | 2014-02-21 | 2020-08-21 | 日商半導體能源研究所股份有限公司 | 半導體膜、電晶體、半導體裝置、顯示裝置以及電子裝置 |
| WO2015132697A1 (en) | 2014-03-07 | 2015-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP6166207B2 (ja) | 2014-03-28 | 2017-07-19 | 出光興産株式会社 | 酸化物焼結体及びスパッタリングターゲット |
| JP2016100585A (ja) * | 2014-11-26 | 2016-05-30 | 株式会社Ｊｏｌｅｄ | 半導体装置およびその製造方法、ならびに表示装置および電子機器 |
| US10684500B2 (en) | 2015-05-27 | 2020-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Touch panel |
| US10139663B2 (en) | 2015-05-29 | 2018-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Input/output device and electronic device |
| KR20160144314A (ko) | 2015-06-08 | 2016-12-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 촬상 장치 및 그 동작 방법, 및 전자 기기 |
| JP2017003976A (ja) | 2015-06-15 | 2017-01-05 | 株式会社半導体エネルギー研究所 | 表示装置 |
| WO2016203354A1 (en) | 2015-06-19 | 2016-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, and electronic device |
| US9860465B2 (en) | 2015-06-23 | 2018-01-02 | Semiconductor Energy Laboratory Co., Ltd. | Imaging device and electronic device |
| WO2017149413A1 (en) | 2016-03-04 | 2017-09-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| KR102734238B1 (ko) | 2016-03-04 | 2024-11-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 그 제작 방법, 및 상기 반도체 장치를 포함하는 표시 장치 |
| KR102721654B1 (ko) | 2016-03-11 | 2024-10-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 복합체 및 트랜지스터 |
| US9905579B2 (en) | 2016-03-18 | 2018-02-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device including the semiconductor device |
| KR102448587B1 (ko) * | 2016-03-22 | 2022-09-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 및 상기 반도체 장치를 포함하는 표시 장치 |
-
2017
- 2017-03-27 US US15/469,943 patent/US10388738B2/en active Active
- 2017-03-28 JP JP2017062226A patent/JP7033853B2/ja active Active
-
2019
- 2019-04-30 JP JP2019087064A patent/JP6656451B2/ja active Active
- 2019-07-15 US US16/511,562 patent/US10886373B2/en active Active
- 2019-12-19 JP JP2019229487A patent/JP7077294B2/ja active Active
-
2020
- 2020-12-29 US US17/136,230 patent/US20210151569A1/en not_active Abandoned
-
2022
- 2022-05-18 JP JP2022081480A patent/JP7439163B2/ja active Active
-
2023
- 2023-06-23 US US18/213,311 patent/US20230335598A1/en active Pending
-
2024
- 2024-02-14 JP JP2024019921A patent/JP2024056861A/ja not_active Withdrawn
-
2025
- 2025-07-10 JP JP2025116691A patent/JP2025142004A/ja active Pending
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