JP7033853B2 - 複合酸化物半導体、およびその作製方法 - Google Patents

複合酸化物半導体、およびその作製方法 Download PDF

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JP7033853B2
JP7033853B2 JP2017062226A JP2017062226A JP7033853B2 JP 7033853 B2 JP7033853 B2 JP 7033853B2 JP 2017062226 A JP2017062226 A JP 2017062226A JP 2017062226 A JP2017062226 A JP 2017062226A JP 7033853 B2 JP7033853 B2 JP 7033853B2
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film
oxide semiconductor
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transistor
insulating film
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JP2017188674A (ja
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舜平 山崎
安孝 中澤
将志 太田
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Semiconductor Energy Laboratory Co Ltd
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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
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JP2017062226A 2016-04-01 2017-03-28 複合酸化物半導体、およびその作製方法 Active JP7033853B2 (ja)

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JP2019087064A Active JP6656451B2 (ja) 2016-04-01 2019-04-30 複合酸化物半導体、半導体装置及び表示装置
JP2019229487A Active JP7077294B2 (ja) 2016-04-01 2019-12-19 複合酸化物半導体、半導体装置及び表示装置
JP2022081480A Active JP7439163B2 (ja) 2016-04-01 2022-05-18 表示装置
JP2024019921A Withdrawn JP2024056861A (ja) 2016-04-01 2024-02-14 表示装置
JP2025116691A Pending JP2025142004A (ja) 2016-04-01 2025-07-10 複合酸化物半導体

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JP2022081480A Active JP7439163B2 (ja) 2016-04-01 2022-05-18 表示装置
JP2024019921A Withdrawn JP2024056861A (ja) 2016-04-01 2024-02-14 表示装置
JP2025116691A Pending JP2025142004A (ja) 2016-04-01 2025-07-10 複合酸化物半導体

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JP6668455B2 (ja) 2016-04-01 2020-03-18 株式会社半導体エネルギー研究所 酸化物半導体膜の作製方法
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KR102403389B1 (ko) 2016-09-12 2022-06-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
WO2019226958A1 (en) 2018-05-24 2019-11-28 The Research Foundation For The State University Of New York Capacitive sensor
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KR102708746B1 (ko) 2018-12-19 2024-09-20 엘지디스플레이 주식회사 박막 트랜지스터 및 이를 포함하는 표시장치
CN113519065A (zh) * 2019-03-01 2021-10-19 株式会社半导体能源研究所 半导体装置
JP7461129B2 (ja) * 2019-10-17 2024-04-03 株式会社ジャパンディスプレイ 半導体装置及び半導体装置の製造方法
KR102401939B1 (ko) * 2020-07-27 2022-05-26 한양대학교 산학협력단 이종 접합 구조의 금속 산화물 반도체층을 갖는 박막 트랜지스터, 이를 포함하는 디스플레이 장치 및 이의 제조방법
CN115117176A (zh) * 2022-06-30 2022-09-27 武汉华星光电半导体显示技术有限公司 一种薄膜晶体管及其制备方法

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