JP2023534389A5 - - Google Patents
Info
- Publication number
- JP2023534389A5 JP2023534389A5 JP2022577164A JP2022577164A JP2023534389A5 JP 2023534389 A5 JP2023534389 A5 JP 2023534389A5 JP 2022577164 A JP2022577164 A JP 2022577164A JP 2022577164 A JP2022577164 A JP 2022577164A JP 2023534389 A5 JP2023534389 A5 JP 2023534389A5
- Authority
- JP
- Japan
- Prior art keywords
- ferroelectric layer
- drain electrode
- layer
- overlaps
- covers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102020207439.9A DE102020207439A1 (de) | 2020-06-16 | 2020-06-16 | Neuronen und Synapsen mit ferroelektrisch modulierten Metall-Halbleiter Schottky Dioden nebst Verfahren |
| DE102020207439.9 | 2020-06-16 | ||
| PCT/EP2021/065297 WO2021254830A1 (de) | 2020-06-16 | 2021-06-08 | Neuronen und synapsen mit ferroelektrisch modulierten metall-halbleiter schottky dioden nebst verfahren |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2023534389A JP2023534389A (ja) | 2023-08-09 |
| JP2023534389A5 true JP2023534389A5 (https=) | 2024-04-05 |
Family
ID=76421990
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022577164A Withdrawn JP2023534389A (ja) | 2020-06-16 | 2021-06-08 | 強誘電的に変調された金属－半導体ショットキーダイオードを有するニューロンおよびシナプス、ならびに方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20230231030A1 (https=) |
| EP (1) | EP4133419B1 (https=) |
| JP (1) | JP2023534389A (https=) |
| CN (1) | CN115668226A (https=) |
| DE (1) | DE102020207439A1 (https=) |
| WO (1) | WO2021254830A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20220012576A1 (en) * | 2020-07-09 | 2022-01-13 | Korea Advanced Institute Of Science And Technology | Charge trap based neuromorphic synaptic transistor with improved linearity and symmetricity by schottky junctions, and a neuromorphic system using it |
| CN117199166A (zh) * | 2022-05-31 | 2023-12-08 | 复旦大学 | 一种极化场调控的正负光响应探测器及其制备方法和应用 |
| KR102824779B1 (ko) * | 2022-11-08 | 2025-06-24 | 성균관대학교산학협력단 | 접합 구조 소자, 이의 제조 방법 및 이를 포함하는 인-메모리 컴퓨터 소자 |
| KR102926808B1 (ko) | 2023-08-30 | 2026-02-12 | 고려대학교 산학협력단 | 실리콘 게이티드 다이오드를 이용한 이진화 신경망 회로 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2715722B2 (ja) | 1991-08-23 | 1998-02-18 | 日本電気株式会社 | 半導体シナプス回路とその製造方法、及び半導体ニューロン素子、及び半導体−超伝導体複合ニューロン素子 |
| US9660067B2 (en) * | 2014-03-25 | 2017-05-23 | Intel Corporation | III-N transistors with epitaxial layers providing steep subthreshold swing |
| DE102016111237B3 (de) | 2016-06-20 | 2017-11-23 | Namlab Ggmbh | Rekonfigurierbarer Nanodraht-Feldeffekt-Transistor und dessen Herstellung sowie ein Nanodraht-Array und dessen Rekonfigurierung |
| US10510903B2 (en) * | 2016-11-29 | 2019-12-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Impact ionization semiconductor device and manufacturing method thereof |
| CN106653837B (zh) * | 2016-12-02 | 2019-09-13 | 电子科技大学 | 一种氮化镓双向开关器件 |
| WO2019066959A1 (en) * | 2017-09-29 | 2019-04-04 | Intel Corporation | FERROELECTRIC NEURONS AND SYNAPES |
| US10658030B2 (en) | 2017-11-29 | 2020-05-19 | International Business Machines Corporation | Synaptic crossbar memory array |
| US10374041B2 (en) * | 2017-12-21 | 2019-08-06 | International Business Machines Corporation | Field effect transistor with controllable resistance |
| WO2019139598A1 (en) * | 2018-01-11 | 2019-07-18 | Intel Corporation | Ferroelectric neurons and synapses with dual gate ferroelectric transistors |
| US11514303B2 (en) | 2018-01-24 | 2022-11-29 | The Regents Of The University Of California | Synaptic resistors for concurrent parallel signal processing, memory and learning with high speed and energy efficiency |
| US10963776B2 (en) * | 2018-08-24 | 2021-03-30 | Namlab Ggmbh | Artificial neuron based on ferroelectric circuit element |
| CN208922326U (zh) | 2018-10-29 | 2019-05-31 | 南京邮电大学 | 一种基于忆阻器阵列的神经网络突触觉结构 |
-
2020
- 2020-06-16 DE DE102020207439.9A patent/DE102020207439A1/de active Pending
-
2021
- 2021-06-08 JP JP2022577164A patent/JP2023534389A/ja not_active Withdrawn
- 2021-06-08 EP EP21731993.8A patent/EP4133419B1/de active Active
- 2021-06-08 WO PCT/EP2021/065297 patent/WO2021254830A1/de not_active Ceased
- 2021-06-08 US US18/007,721 patent/US20230231030A1/en active Pending
- 2021-06-08 CN CN202180035992.XA patent/CN115668226A/zh not_active Withdrawn
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