JP2023534389A - 強誘電的に変調された金属－半導体ショットキーダイオードを有するニューロンおよびシナプス、ならびに方法 - Google Patents
強誘電的に変調された金属－半導体ショットキーダイオードを有するニューロンおよびシナプス、ならびに方法 Download PDFInfo
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- JP2023534389A JP2023534389A JP2022577164A JP2022577164A JP2023534389A JP 2023534389 A JP2023534389 A JP 2023534389A JP 2022577164 A JP2022577164 A JP 2022577164A JP 2022577164 A JP2022577164 A JP 2022577164A JP 2023534389 A JP2023534389 A JP 2023534389A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
- H10D64/647—Schottky drain or source electrodes for IGFETs
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N3/00—Computing arrangements based on biological models
- G06N3/02—Neural networks
- G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
- G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
- G06N3/065—Analogue means
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/223—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using MOS with ferroelectric gate insulating film
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/54—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using elements simulating biological cells, e.g. neuron
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
- H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/701—IGFETs having ferroelectric gate insulators, e.g. ferroelectric FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/251—Source or drain electrodes for field-effect devices
- H10D64/258—Source or drain electrodes for field-effect devices characterised by the relative positions of the source or drain electrodes with respect to the gate electrode
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
- H10D64/689—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having ferroelectric layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/60—Schottky-barrier diodes
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N3/00—Computing arrangements based on biological models
- G06N3/02—Neural networks
- G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
- G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
Landscapes
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biomedical Technology (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Health & Medical Sciences (AREA)
- Neurology (AREA)
- Molecular Biology (AREA)
- Biophysics (AREA)
- Theoretical Computer Science (AREA)
- Evolutionary Computation (AREA)
- Data Mining & Analysis (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Software Systems (AREA)
- Computational Linguistics (AREA)
- Artificial Intelligence (AREA)
- Semiconductor Memories (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102020207439.9A DE102020207439A1 (de) | 2020-06-16 | 2020-06-16 | Neuronen und Synapsen mit ferroelektrisch modulierten Metall-Halbleiter Schottky Dioden nebst Verfahren |
| DE102020207439.9 | 2020-06-16 | ||
| PCT/EP2021/065297 WO2021254830A1 (de) | 2020-06-16 | 2021-06-08 | Neuronen und synapsen mit ferroelektrisch modulierten metall-halbleiter schottky dioden nebst verfahren |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2023534389A true JP2023534389A (ja) | 2023-08-09 |
| JP2023534389A5 JP2023534389A5 (https=) | 2024-04-05 |
Family
ID=76421990
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022577164A Withdrawn JP2023534389A (ja) | 2020-06-16 | 2021-06-08 | 強誘電的に変調された金属－半導体ショットキーダイオードを有するニューロンおよびシナプス、ならびに方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20230231030A1 (https=) |
| EP (1) | EP4133419B1 (https=) |
| JP (1) | JP2023534389A (https=) |
| CN (1) | CN115668226A (https=) |
| DE (1) | DE102020207439A1 (https=) |
| WO (1) | WO2021254830A1 (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2024068667A (ja) * | 2022-11-08 | 2024-05-20 | リサーチ アンド ビジネス ファウンデーション ソンギュングァン ユニバーシティ | 接合構造素子、この製造方法及びこれを備えるインメモリーコンピューター素子 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20220012576A1 (en) * | 2020-07-09 | 2022-01-13 | Korea Advanced Institute Of Science And Technology | Charge trap based neuromorphic synaptic transistor with improved linearity and symmetricity by schottky junctions, and a neuromorphic system using it |
| CN117199166A (zh) * | 2022-05-31 | 2023-12-08 | 复旦大学 | 一种极化场调控的正负光响应探测器及其制备方法和应用 |
| KR102926808B1 (ko) | 2023-08-30 | 2026-02-12 | 고려대학교 산학협력단 | 실리콘 게이티드 다이오드를 이용한 이진화 신경망 회로 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2715722B2 (ja) | 1991-08-23 | 1998-02-18 | 日本電気株式会社 | 半導体シナプス回路とその製造方法、及び半導体ニューロン素子、及び半導体−超伝導体複合ニューロン素子 |
| US9660067B2 (en) * | 2014-03-25 | 2017-05-23 | Intel Corporation | III-N transistors with epitaxial layers providing steep subthreshold swing |
| DE102016111237B3 (de) | 2016-06-20 | 2017-11-23 | Namlab Ggmbh | Rekonfigurierbarer Nanodraht-Feldeffekt-Transistor und dessen Herstellung sowie ein Nanodraht-Array und dessen Rekonfigurierung |
| US10510903B2 (en) * | 2016-11-29 | 2019-12-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Impact ionization semiconductor device and manufacturing method thereof |
| CN106653837B (zh) * | 2016-12-02 | 2019-09-13 | 电子科技大学 | 一种氮化镓双向开关器件 |
| WO2019066959A1 (en) * | 2017-09-29 | 2019-04-04 | Intel Corporation | FERROELECTRIC NEURONS AND SYNAPES |
| US10658030B2 (en) | 2017-11-29 | 2020-05-19 | International Business Machines Corporation | Synaptic crossbar memory array |
| US10374041B2 (en) * | 2017-12-21 | 2019-08-06 | International Business Machines Corporation | Field effect transistor with controllable resistance |
| WO2019139598A1 (en) * | 2018-01-11 | 2019-07-18 | Intel Corporation | Ferroelectric neurons and synapses with dual gate ferroelectric transistors |
| US11514303B2 (en) | 2018-01-24 | 2022-11-29 | The Regents Of The University Of California | Synaptic resistors for concurrent parallel signal processing, memory and learning with high speed and energy efficiency |
| US10963776B2 (en) * | 2018-08-24 | 2021-03-30 | Namlab Ggmbh | Artificial neuron based on ferroelectric circuit element |
| CN208922326U (zh) | 2018-10-29 | 2019-05-31 | 南京邮电大学 | 一种基于忆阻器阵列的神经网络突触觉结构 |
-
2020
- 2020-06-16 DE DE102020207439.9A patent/DE102020207439A1/de active Pending
-
2021
- 2021-06-08 JP JP2022577164A patent/JP2023534389A/ja not_active Withdrawn
- 2021-06-08 EP EP21731993.8A patent/EP4133419B1/de active Active
- 2021-06-08 WO PCT/EP2021/065297 patent/WO2021254830A1/de not_active Ceased
- 2021-06-08 US US18/007,721 patent/US20230231030A1/en active Pending
- 2021-06-08 CN CN202180035992.XA patent/CN115668226A/zh not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2024068667A (ja) * | 2022-11-08 | 2024-05-20 | リサーチ アンド ビジネス ファウンデーション ソンギュングァン ユニバーシティ | 接合構造素子、この製造方法及びこれを備えるインメモリーコンピューター素子 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP4133419A1 (de) | 2023-02-15 |
| US20230231030A1 (en) | 2023-07-20 |
| CN115668226A (zh) | 2023-01-31 |
| WO2021254830A1 (de) | 2021-12-23 |
| EP4133419C0 (de) | 2025-03-26 |
| EP4133419B1 (de) | 2025-03-26 |
| DE102020207439A1 (de) | 2021-12-16 |
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