DE102020207439A1 - Neuronen und Synapsen mit ferroelektrisch modulierten Metall-Halbleiter Schottky Dioden nebst Verfahren - Google Patents

Neuronen und Synapsen mit ferroelektrisch modulierten Metall-Halbleiter Schottky Dioden nebst Verfahren Download PDF

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DE102020207439A1
DE102020207439A1 DE102020207439.9A DE102020207439A DE102020207439A1 DE 102020207439 A1 DE102020207439 A1 DE 102020207439A1 DE 102020207439 A DE102020207439 A DE 102020207439A DE 102020207439 A1 DE102020207439 A1 DE 102020207439A1
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ferroelectric
electrode
semiconducting layer
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English (en)
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Qing-Tai Zhao
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Forschungszentrum Juelich GmbH
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Forschungszentrum Juelich GmbH
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Priority to DE102020207439.9A priority Critical patent/DE102020207439A1/de
Priority to PCT/EP2021/065297 priority patent/WO2021254830A1/de
Priority to CN202180035992.XA priority patent/CN115668226A/zh
Priority to JP2022577164A priority patent/JP2023534389A/ja
Priority to EP21731993.8A priority patent/EP4133419B1/de
Priority to US18/007,721 priority patent/US20230231030A1/en
Publication of DE102020207439A1 publication Critical patent/DE102020207439A1/de
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H10D64/647—Schottky drain or source electrodes for IGFETs
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
    • G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
    • G06N3/065—Analogue means
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/223—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using MOS with ferroelectric gate insulating film
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/54—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using elements simulating biological cells, e.g. neuron
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/701—IGFETs having ferroelectric gate insulators, e.g. ferroelectric FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/258—Source or drain electrodes for field-effect devices characterised by the relative positions of the source or drain electrodes with respect to the gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/689—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having ferroelectric layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
    • G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means

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  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biomedical Technology (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Health & Medical Sciences (AREA)
  • Neurology (AREA)
  • Molecular Biology (AREA)
  • Biophysics (AREA)
  • Theoretical Computer Science (AREA)
  • Evolutionary Computation (AREA)
  • Data Mining & Analysis (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Software Systems (AREA)
  • Computational Linguistics (AREA)
  • Artificial Intelligence (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE102020207439.9A 2020-06-16 2020-06-16 Neuronen und Synapsen mit ferroelektrisch modulierten Metall-Halbleiter Schottky Dioden nebst Verfahren Pending DE102020207439A1 (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
DE102020207439.9A DE102020207439A1 (de) 2020-06-16 2020-06-16 Neuronen und Synapsen mit ferroelektrisch modulierten Metall-Halbleiter Schottky Dioden nebst Verfahren
PCT/EP2021/065297 WO2021254830A1 (de) 2020-06-16 2021-06-08 Neuronen und synapsen mit ferroelektrisch modulierten metall-halbleiter schottky dioden nebst verfahren
CN202180035992.XA CN115668226A (zh) 2020-06-16 2021-06-08 神经元和具有铁电调制金属半导体肖特基二极管的突触及方法
JP2022577164A JP2023534389A (ja) 2020-06-16 2021-06-08 強誘電的に変調された金属－半導体ショットキーダイオードを有するニューロンおよびシナプス、ならびに方法
EP21731993.8A EP4133419B1 (de) 2020-06-16 2021-06-08 Neuronen und synapsen mit ferroelektrisch modulierten metall-halbleiter schottky dioden nebst verfahren
US18/007,721 US20230231030A1 (en) 2020-06-16 2021-06-08 Neurons and synapses with ferroelectrically modulated metal-semiconductor schottky diodes and method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102020207439.9A DE102020207439A1 (de) 2020-06-16 2020-06-16 Neuronen und Synapsen mit ferroelektrisch modulierten Metall-Halbleiter Schottky Dioden nebst Verfahren

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DE102020207439A1 true DE102020207439A1 (de) 2021-12-16

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US (1) US20230231030A1 (https=)
EP (1) EP4133419B1 (https=)
JP (1) JP2023534389A (https=)
CN (1) CN115668226A (https=)
DE (1) DE102020207439A1 (https=)
WO (1) WO2021254830A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220012576A1 (en) * 2020-07-09 2022-01-13 Korea Advanced Institute Of Science And Technology Charge trap based neuromorphic synaptic transistor with improved linearity and symmetricity by schottky junctions, and a neuromorphic system using it

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117199166A (zh) * 2022-05-31 2023-12-08 复旦大学 一种极化场调控的正负光响应探测器及其制备方法和应用
KR102824779B1 (ko) * 2022-11-08 2025-06-24 성균관대학교산학협력단 접합 구조 소자, 이의 제조 방법 및 이를 포함하는 인-메모리 컴퓨터 소자
KR102926808B1 (ko) 2023-08-30 2026-02-12 고려대학교 산학협력단 실리콘 게이티드 다이오드를 이용한 이진화 신경망 회로

Citations (5)

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EP0529565B1 (en) 1991-08-23 1997-11-19 NEC Corporation Semiconductor synapse circuit and neuron device using the same
DE102016111237B3 (de) 2016-06-20 2017-11-23 Namlab Ggmbh Rekonfigurierbarer Nanodraht-Feldeffekt-Transistor und dessen Herstellung sowie ein Nanodraht-Array und dessen Rekonfigurierung
US20190164597A1 (en) 2017-11-29 2019-05-30 International Business Machines Corporation Synaptic crossbar memory array
CN208922326U (zh) 2018-10-29 2019-05-31 南京邮电大学 一种基于忆阻器阵列的神经网络突触觉结构
WO2019147859A2 (en) 2018-01-24 2019-08-01 The Regents Of The University Of California Synaptic resistors for concurrent parallel signal processing, memory and learning with high speed and energy efficiency

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US10510903B2 (en) * 2016-11-29 2019-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. Impact ionization semiconductor device and manufacturing method thereof
CN106653837B (zh) * 2016-12-02 2019-09-13 电子科技大学 一种氮化镓双向开关器件
WO2019066959A1 (en) * 2017-09-29 2019-04-04 Intel Corporation FERROELECTRIC NEURONS AND SYNAPES
US10374041B2 (en) * 2017-12-21 2019-08-06 International Business Machines Corporation Field effect transistor with controllable resistance
WO2019139598A1 (en) * 2018-01-11 2019-07-18 Intel Corporation Ferroelectric neurons and synapses with dual gate ferroelectric transistors
US10963776B2 (en) * 2018-08-24 2021-03-30 Namlab Ggmbh Artificial neuron based on ferroelectric circuit element

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EP0529565B1 (en) 1991-08-23 1997-11-19 NEC Corporation Semiconductor synapse circuit and neuron device using the same
DE102016111237B3 (de) 2016-06-20 2017-11-23 Namlab Ggmbh Rekonfigurierbarer Nanodraht-Feldeffekt-Transistor und dessen Herstellung sowie ein Nanodraht-Array und dessen Rekonfigurierung
US20190164597A1 (en) 2017-11-29 2019-05-30 International Business Machines Corporation Synaptic crossbar memory array
WO2019147859A2 (en) 2018-01-24 2019-08-01 The Regents Of The University Of California Synaptic resistors for concurrent parallel signal processing, memory and learning with high speed and energy efficiency
CN208922326U (zh) 2018-10-29 2019-05-31 南京邮电大学 一种基于忆阻器阵列的神经网络突触觉结构

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B.Tian: A Robust Artificial Synapse Based on Organic Ferroelectric Polymer. In: Advanced Electronic Materials , 5, 2019, 1800600, 8 Seiten.
M.K.Kim et al: Ferroelectric Analog Synaptic Transistors. In: Nano Letters, 19, 2019, 2044 - 2050.
S.Das et al: A biomimetic 2D transistor for audiomorphic computing . In: Nature Communications, 10, 2019 / 1.8.2019, 3450, 10 Seiten.
S.Das: High Performance Multilayer MoS2 Transistors with Scandium Contacts. In: Nano Letters , 13, 2013, 100 - 105.
Y.Nishitani: Three – terminal ferroelectric synapse device with concurrent learning function for artificial neural networks. In: Journal of Applied Physics, 111, 2012, 124108, 5 Seiten.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220012576A1 (en) * 2020-07-09 2022-01-13 Korea Advanced Institute Of Science And Technology Charge trap based neuromorphic synaptic transistor with improved linearity and symmetricity by schottky junctions, and a neuromorphic system using it

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Publication number Publication date
EP4133419A1 (de) 2023-02-15
US20230231030A1 (en) 2023-07-20
CN115668226A (zh) 2023-01-31
WO2021254830A1 (de) 2021-12-23
EP4133419C0 (de) 2025-03-26
JP2023534389A (ja) 2023-08-09
EP4133419B1 (de) 2025-03-26

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