CN113677834A - 半导体膜 - Google Patents

半导体膜 Download PDF

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Publication number
CN113677834A
CN113677834A CN201980093713.8A CN201980093713A CN113677834A CN 113677834 A CN113677834 A CN 113677834A CN 201980093713 A CN201980093713 A CN 201980093713A CN 113677834 A CN113677834 A CN 113677834A
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CN
China
Prior art keywords
semiconductor film
film
substrate
crystal
alpha
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201980093713.8A
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English (en)
Chinese (zh)
Inventor
渡边守道
福井宏史
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=72941607&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=CN113677834(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Publication of CN113677834A publication Critical patent/CN113677834A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C23C16/029—Graded interfaces
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
CN201980093713.8A 2019-04-24 2019-09-10 半导体膜 Pending CN113677834A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPPCT/JP2019/017516 2019-04-24
JP2019017516 2019-04-24
PCT/JP2019/035514 WO2020217564A1 (ja) 2019-04-24 2019-09-10 半導体膜

Publications (1)

Publication Number Publication Date
CN113677834A true CN113677834A (zh) 2021-11-19

Family

ID=72941607

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980093713.8A Pending CN113677834A (zh) 2019-04-24 2019-09-10 半导体膜

Country Status (5)

Country Link
US (2) US20220029022A1 (https=)
EP (1) EP3960915A4 (https=)
JP (2) JP6784871B1 (https=)
CN (1) CN113677834A (https=)
WO (1) WO2020217564A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117646191A (zh) * 2023-12-27 2024-03-05 拓荆科技(上海)有限公司 反应前体蒸发器和含彼的原子层沉积系统

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114423883B (zh) * 2019-09-30 2024-03-12 日本碍子株式会社 α－Ga2O3系半导体膜
US11804519B2 (en) * 2020-04-24 2023-10-31 Flosfia Inc. Crystalline multilayer structure, semiconductor device, and method of manufacturing crystalline structure
WO2022196505A1 (ja) 2021-03-16 2022-09-22 東レ株式会社 ポリアミド樹脂組成物、およびそれを成形してなる成形品
TWM633935U (zh) * 2021-04-07 2022-11-11 日商信越化學工業股份有限公司 積層體的製造系統、積層體以及半導體裝置
WO2022230342A1 (ja) * 2021-04-27 2022-11-03 日本碍子株式会社 複合基板、複合基板の製法及び酸化ガリウム結晶膜の製法
KR102546042B1 (ko) 2021-12-22 2023-06-22 주식회사루미지엔테크 HVPE법에 따른 Ga2O3 결정막 증착방법, 증착장치 및 이를 사용한 Ga2O3 결정막 증착 기판
US20250133797A1 (en) * 2022-02-02 2025-04-24 Shin-Etsu Chemical Co., Ltd. Crystalline oxide film, laminated structure, semiconductor device, and method for producing crystalline oxide film
WO2024043134A1 (ja) * 2022-08-26 2024-02-29 信越化学工業株式会社 成膜方法、成膜装置、サセプター、及びα－酸化ガリウム膜

Citations (7)

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Publication number Priority date Publication date Assignee Title
CN101522942A (zh) * 2006-09-29 2009-09-02 昭和电工株式会社 Ⅲ族氮化物化合物半导体叠层结构体的成膜方法
CN101578715A (zh) * 2007-01-16 2009-11-11 昭和电工株式会社 Ⅲ族氮化物化合物半导体元件及其制造方法、ⅲ族氮化物化合物半导体发光元件及其制造方法和灯
JP2013028480A (ja) * 2011-07-27 2013-02-07 Kochi Univ Of Technology ドーパントを添加した結晶性の高い導電性α型酸化ガリウム薄膜およびその生成方法
US20150249185A1 (en) * 2014-02-28 2015-09-03 Tamura Corporation Beta-Ga2O3-Based Single Crystal Substrate
CN104952926A (zh) * 2014-03-31 2015-09-30 Flosfia株式会社 结晶性层叠结构体,半导体装置
JP2016064961A (ja) * 2014-09-25 2016-04-28 株式会社Flosfia 結晶性積層構造体の製造方法および半導体装置
WO2018084304A1 (ja) * 2016-11-07 2018-05-11 株式会社Flosfia 結晶性酸化物半導体膜および半導体装置

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JP6067532B2 (ja) 2013-10-10 2017-01-25 株式会社Flosfia 半導体装置
JP2015196603A (ja) * 2014-03-31 2015-11-09 株式会社Flosfia 結晶性積層構造体、半導体装置
JP6349592B2 (ja) 2014-07-22 2018-07-04 株式会社Flosfia 半導体装置
JP6281146B2 (ja) 2014-07-22 2018-02-21 株式会社Flosfia 結晶性半導体膜および板状体ならびに半導体装置
JP6422159B2 (ja) * 2015-02-25 2018-11-14 国立研究開発法人物質・材料研究機構 α−Ｇａ２Ｏ３単結晶、α−Ｇａ２Ｏ３の製造方法、および、それを用いた半導体素子
JP6876895B2 (ja) * 2015-02-25 2021-05-26 株式会社Flosfia 結晶性酸化物半導体膜、半導体装置
JP5987229B2 (ja) * 2015-03-09 2016-09-07 高知県公立大学法人 ドーパントを添加した結晶性の高い導電性α型酸化ガリウム薄膜およびその生成方法
CN109000790B (zh) * 2018-05-30 2021-09-07 金华紫芯科技有限公司 一种氧化镓基柔性日盲紫外火焰探测器及其制备方法

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CN101522942A (zh) * 2006-09-29 2009-09-02 昭和电工株式会社 Ⅲ族氮化物化合物半导体叠层结构体的成膜方法
CN101578715A (zh) * 2007-01-16 2009-11-11 昭和电工株式会社 Ⅲ族氮化物化合物半导体元件及其制造方法、ⅲ族氮化物化合物半导体发光元件及其制造方法和灯
JP2013028480A (ja) * 2011-07-27 2013-02-07 Kochi Univ Of Technology ドーパントを添加した結晶性の高い導電性α型酸化ガリウム薄膜およびその生成方法
US20150249185A1 (en) * 2014-02-28 2015-09-03 Tamura Corporation Beta-Ga2O3-Based Single Crystal Substrate
CN104952926A (zh) * 2014-03-31 2015-09-30 Flosfia株式会社 结晶性层叠结构体,半导体装置
JP2016064961A (ja) * 2014-09-25 2016-04-28 株式会社Flosfia 結晶性積層構造体の製造方法および半導体装置
WO2018084304A1 (ja) * 2016-11-07 2018-05-11 株式会社Flosfia 結晶性酸化物半導体膜および半導体装置

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KAZUAKI AKAIWA ET AL.: "《Electrical Conductive Corundum-Structured α-Ga2O3 Thin Films on Sapphire with Tin-Doping Grown by Spray-Assisted Mist Chemical Vapor Deposition》", 《JAPANESE JOURNAL OF APPLIED PHYSICS》, vol. 51, 14 June 2012 (2012-06-14), pages 070203 - 1 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117646191A (zh) * 2023-12-27 2024-03-05 拓荆科技(上海)有限公司 反应前体蒸发器和含彼的原子层沉积系统
WO2025138667A1 (zh) * 2023-12-27 2025-07-03 拓荆科技(上海)有限公司 反应前体蒸发器和含彼的原子层沉积系统

Also Published As

Publication number Publication date
JPWO2020217564A1 (ja) 2021-05-06
US20220029022A1 (en) 2022-01-27
JP2021042120A (ja) 2021-03-18
WO2020217564A1 (ja) 2020-10-29
JP7461851B2 (ja) 2024-04-04
US20250159937A1 (en) 2025-05-15
EP3960915A1 (en) 2022-03-02
EP3960915A4 (en) 2022-12-21
JP6784871B1 (ja) 2020-11-11

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