JP2021046341A5 - - Google Patents
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- JP2021046341A5 JP2021046341A5 JP2019170816A JP2019170816A JP2021046341A5 JP 2021046341 A5 JP2021046341 A5 JP 2021046341A5 JP 2019170816 A JP2019170816 A JP 2019170816A JP 2019170816 A JP2019170816 A JP 2019170816A JP 2021046341 A5 JP2021046341 A5 JP 2021046341A5
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- Prior art keywords
- substrate
- protective layer
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- 239000000758 substrate Substances 0.000 claims description 27
- 239000011241 protective layer Substances 0.000 claims description 23
- 239000010410 layer Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 7
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 6
- 239000002131 composite material Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims 17
- 150000004767 nitrides Chemical class 0.000 claims 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- 239000000463 material Substances 0.000 claims 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 3
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 238000000927 vapour-phase epitaxy Methods 0.000 claims 2
- 238000005520 cutting process Methods 0.000 claims 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000005336 cracking Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019170816A JP7369396B2 (ja) | 2019-09-19 | 2019-09-19 | 保護層の製造方法、保護層付単結晶自立基板の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019170816A JP7369396B2 (ja) | 2019-09-19 | 2019-09-19 | 保護層の製造方法、保護層付単結晶自立基板の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021046341A JP2021046341A (ja) | 2021-03-25 |
| JP2021046341A5 true JP2021046341A5 (https=) | 2022-09-15 |
| JP7369396B2 JP7369396B2 (ja) | 2023-10-26 |
Family
ID=74877730
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019170816A Active JP7369396B2 (ja) | 2019-09-19 | 2019-09-19 | 保護層の製造方法、保護層付単結晶自立基板の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP7369396B2 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113643978A (zh) * | 2021-07-27 | 2021-11-12 | 苏州纳维科技有限公司 | 复合衬底的制备方法及复合衬底 |
| CN113668061B (zh) * | 2021-07-27 | 2023-02-03 | 奥趋光电技术(杭州)有限公司 | 一种提高氮化铝晶片紫外透过率的方法 |
| CN113643977A (zh) * | 2021-07-27 | 2021-11-12 | 苏州纳维科技有限公司 | 复合衬底的制备方法及复合衬底 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6260145B2 (ja) | 2013-08-27 | 2018-01-17 | 富士電機株式会社 | 半導体装置の製造方法 |
| WO2015037232A1 (ja) | 2013-09-11 | 2015-03-19 | 国立大学法人東京農工大学 | 窒化物半導体結晶、製造方法および製造装置 |
| JP6911281B2 (ja) | 2016-05-18 | 2021-07-28 | 富士電機株式会社 | 半導体装置の製造方法 |
| JP6834207B2 (ja) | 2016-07-13 | 2021-02-24 | 富士電機株式会社 | 半導体装置の製造方法 |
| JP6801556B2 (ja) | 2017-03-29 | 2020-12-16 | 豊田合成株式会社 | 半導体装置の製造方法 |
| JP6824829B2 (ja) | 2017-06-15 | 2021-02-03 | 株式会社サイオクス | 窒化物半導体積層物の製造方法、窒化物半導体自立基板の製造方法および半導体装置の製造方法 |
-
2019
- 2019-09-19 JP JP2019170816A patent/JP7369396B2/ja active Active
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