JP7369396B2 - 保護層の製造方法、保護層付単結晶自立基板の製造方法 - Google Patents

保護層の製造方法、保護層付単結晶自立基板の製造方法 Download PDF

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JP7369396B2
JP7369396B2 JP2019170816A JP2019170816A JP7369396B2 JP 7369396 B2 JP7369396 B2 JP 7369396B2 JP 2019170816 A JP2019170816 A JP 2019170816A JP 2019170816 A JP2019170816 A JP 2019170816A JP 7369396 B2 JP7369396 B2 JP 7369396B2
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JP2021046341A5 (https=
JP2021046341A (ja
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晃 山口
冠錫 朴
功 松本
明伯 纐纈
尚 村上
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Tokyo University of Agriculture and Technology NUC
Taiyo Nippon Sanso Corp
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Nippon Sanso Holdings Corp
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JP2019170816A 2019-09-19 2019-09-19 保護層の製造方法、保護層付単結晶自立基板の製造方法 Active JP7369396B2 (ja)

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CN113643978A (zh) * 2021-07-27 2021-11-12 苏州纳维科技有限公司 复合衬底的制备方法及复合衬底
CN113668061B (zh) * 2021-07-27 2023-02-03 奥趋光电技术(杭州)有限公司 一种提高氮化铝晶片紫外透过率的方法
CN113643977A (zh) * 2021-07-27 2021-11-12 苏州纳维科技有限公司 复合衬底的制备方法及复合衬底

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015046441A (ja) 2013-08-27 2015-03-12 富士電機株式会社 半導体装置の製造方法および半導体装置
WO2015037232A1 (ja) 2013-09-11 2015-03-19 国立大学法人東京農工大学 窒化物半導体結晶、製造方法および製造装置
JP2017208427A (ja) 2016-05-18 2017-11-24 富士電機株式会社 半導体装置の製造方法
JP2018010970A (ja) 2016-07-13 2018-01-18 富士電機株式会社 半導体装置の製造方法
JP2018170335A (ja) 2017-03-29 2018-11-01 豊田合成株式会社 半導体装置の製造方法
JP2019004047A (ja) 2017-06-15 2019-01-10 株式会社サイオクス 窒化物半導体積層物、半導体装置、窒化物半導体積層物の製造方法、窒化物半導体自立基板の製造方法および半導体装置の製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015046441A (ja) 2013-08-27 2015-03-12 富士電機株式会社 半導体装置の製造方法および半導体装置
WO2015037232A1 (ja) 2013-09-11 2015-03-19 国立大学法人東京農工大学 窒化物半導体結晶、製造方法および製造装置
JP2017208427A (ja) 2016-05-18 2017-11-24 富士電機株式会社 半導体装置の製造方法
JP2018010970A (ja) 2016-07-13 2018-01-18 富士電機株式会社 半導体装置の製造方法
JP2018170335A (ja) 2017-03-29 2018-11-01 豊田合成株式会社 半導体装置の製造方法
JP2019004047A (ja) 2017-06-15 2019-01-10 株式会社サイオクス 窒化物半導体積層物、半導体装置、窒化物半導体積層物の製造方法、窒化物半導体自立基板の製造方法および半導体装置の製造方法

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