JP6784870B1 - 半導体膜 - Google Patents

半導体膜 Download PDF

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Publication number
JP6784870B1
JP6784870B1 JP2020538732A JP2020538732A JP6784870B1 JP 6784870 B1 JP6784870 B1 JP 6784870B1 JP 2020538732 A JP2020538732 A JP 2020538732A JP 2020538732 A JP2020538732 A JP 2020538732A JP 6784870 B1 JP6784870 B1 JP 6784870B1
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Japan
Prior art keywords
film
semiconductor film
substrate
layer
crystal
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JP2020538732A
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English (en)
Japanese (ja)
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JPWO2020217563A1 (ja
Inventor
守道 渡邊
守道 渡邊
福井　宏史
宏史 福井
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NGK Insulators Ltd
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NGK Insulators Ltd
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Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Priority to JP2020176243A priority Critical patent/JP7410009B2/ja
Application granted granted Critical
Publication of JP6784870B1 publication Critical patent/JP6784870B1/ja
Publication of JPWO2020217563A1 publication Critical patent/JPWO2020217563A1/ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2926—Crystal orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Chemical Vapour Deposition (AREA)
JP2020538732A 2019-04-24 2019-09-10 半導体膜 Active JP6784870B1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2020176243A JP7410009B2 (ja) 2019-04-24 2020-10-20 半導体膜

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019017515 2019-04-24
JPPCT/JP2019/017515 2019-04-24
PCT/JP2019/035513 WO2020217563A1 (ja) 2019-04-24 2019-09-10 半導体膜

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2020176243A Division JP7410009B2 (ja) 2019-04-24 2020-10-20 半導体膜

Publications (2)

Publication Number Publication Date
JP6784870B1 true JP6784870B1 (ja) 2020-11-11
JPWO2020217563A1 JPWO2020217563A1 (ja) 2021-05-06

Family

ID=72941625

Family Applications (2)

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JP2020538732A Active JP6784870B1 (ja) 2019-04-24 2019-09-10 半導体膜
JP2020176243A Active JP7410009B2 (ja) 2019-04-24 2020-10-20 半導体膜

Family Applications After (1)

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JP2020176243A Active JP7410009B2 (ja) 2019-04-24 2020-10-20 半導体膜

Country Status (5)

Country Link
US (1) US11942520B2 (https=)
EP (1) EP3960914A4 (https=)
JP (2) JP6784870B1 (https=)
CN (1) CN113677833B (https=)
WO (1) WO2020217563A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202235664A (zh) * 2021-03-12 2022-09-16 日商信越化學工業股份有限公司 氧化物半導體膜及其成膜方法、半導體裝置
WO2023048150A1 (ja) * 2021-09-22 2023-03-30 株式会社Flosfia 結晶膜の製造方法および結晶膜
KR102546042B1 (ko) * 2021-12-22 2023-06-22 주식회사루미지엔테크 HVPE법에 따른 Ga2O3 결정막 증착방법, 증착장치 및 이를 사용한 Ga2O3 결정막 증착 기판
WO2025203572A1 (ja) * 2024-03-29 2025-10-02 日本碍子株式会社 下地基板

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05254991A (ja) * 1992-03-11 1993-10-05 Hitachi Constr Mach Co Ltd 薄膜積層結晶体およびその製造方法
JP2014072533A (ja) * 2013-10-10 2014-04-21 Roca Kk 半導体装置
JP2014234344A (ja) * 2013-10-10 2014-12-15 株式会社Flosfia 酸化物結晶薄膜の製造方法
JP2016155714A (ja) * 2015-02-25 2016-09-01 国立研究開発法人物質・材料研究機構 α−Ｇａ２Ｏ３単結晶、α−Ｇａ２Ｏ３の製造方法、および、それを用いた半導体素子
US20190057865A1 (en) * 2017-08-21 2019-02-21 Flosfia Inc. Crystalline film, semiconductor device including crystalline film, and method for producing crystalline film

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JPH02263427A (ja) * 1989-04-03 1990-10-26 Sumitomo Metal Ind Ltd 化合物半導体基板およびその製造方法
JP3795765B2 (ja) * 2001-04-06 2006-07-12 ソニー株式会社 化合物半導体基板の製造方法
JP4189386B2 (ja) * 2005-01-27 2008-12-03 ローム株式会社 窒化物半導体結晶層の成長方法および窒化物半導体発光素子の製法
DE102009008371A1 (de) * 2009-02-11 2010-08-12 Schott Solar Ag Integraler Prozeß von Waferherstellung bis Modulfertigung zur Herstellung von Wafern, Solarzellen und Solarmodulen
KR101932576B1 (ko) * 2010-09-13 2018-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP5343224B1 (ja) * 2012-09-28 2013-11-13 Ｒｏｃａ株式会社 半導体装置および結晶
JP6349592B2 (ja) 2014-07-22 2018-07-04 株式会社Flosfia 半導体装置
JP2016157879A (ja) * 2015-02-25 2016-09-01 株式会社Flosfia 結晶性酸化物半導体膜、半導体装置
JP6471921B2 (ja) * 2015-03-24 2019-02-20 株式会社村田製作所 薄膜構造体、及び薄膜構造体の製造方法、並びに半導体デバイス
JP6945121B2 (ja) * 2015-09-30 2021-10-06 株式会社Flosfia 結晶性半導体膜および半導体装置
KR102527306B1 (ko) * 2016-01-18 2023-04-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 금속 산화물막, 반도체 장치, 및 표시 장치
US10804362B2 (en) * 2016-08-31 2020-10-13 Flosfia Inc. Crystalline oxide semiconductor film, crystalline oxide semiconductor device, and crystalline oxide semiconductor system
CN108615672B (zh) * 2018-04-17 2020-09-04 中山大学 一种半导体结晶膜的制备方法及其半导体结晶膜
EP3816330A4 (en) 2018-06-26 2022-10-05 Flosfia Inc. CRYSTALLINE OXIDE FILM
JP7404593B2 (ja) * 2018-06-26 2023-12-26 株式会社Flosfia 成膜方法および結晶性積層構造体
US11088242B2 (en) * 2019-03-29 2021-08-10 Flosfia Inc. Crystal, crystalline oxide semiconductor, semiconductor film containing crystalline oxide semiconductor, semiconductor device including crystal and/or semiconductor film and system including semiconductor device
US10992103B1 (en) * 2019-12-02 2021-04-27 Sharp Fukuyama Laser Co., Ltd. Laser device

Patent Citations (5)

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Publication number Priority date Publication date Assignee Title
JPH05254991A (ja) * 1992-03-11 1993-10-05 Hitachi Constr Mach Co Ltd 薄膜積層結晶体およびその製造方法
JP2014072533A (ja) * 2013-10-10 2014-04-21 Roca Kk 半導体装置
JP2014234344A (ja) * 2013-10-10 2014-12-15 株式会社Flosfia 酸化物結晶薄膜の製造方法
JP2016155714A (ja) * 2015-02-25 2016-09-01 国立研究開発法人物質・材料研究機構 α−Ｇａ２Ｏ３単結晶、α−Ｇａ２Ｏ３の製造方法、および、それを用いた半導体素子
US20190057865A1 (en) * 2017-08-21 2019-02-21 Flosfia Inc. Crystalline film, semiconductor device including crystalline film, and method for producing crystalline film

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Title
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JINNO, RIENA, ET AL.: "Reduction in edge dislocation density in corundum-structured α-Ga2O3 layers on sapphire substrates", APPLIED PHYSICS EXPRESS, vol. 9, JPN6018028227, 2016, pages 071101 - 1, ISSN: 0004356148 *
増田 泰久、金子 健太郎、大島 祐一、四戸 孝、藤田 静雄: "金ナノ粒子修飾サファイヤ基板上酸化ガリウム薄膜の作製", 2018年 第79回 応用物理学会秋季学術講演会［講演予稿集］ EXTENDED ABSTRACTS OF THE 79TH JSAP AUTUMN, JPN6019025485, pages 224 - 5, ISSN: 0004356149 *

Also Published As

Publication number Publication date
CN113677833B (zh) 2024-08-23
US11942520B2 (en) 2024-03-26
JP7410009B2 (ja) 2024-01-09
EP3960914A1 (en) 2022-03-02
JPWO2020217563A1 (ja) 2021-05-06
US20220028982A1 (en) 2022-01-27
CN113677833A (zh) 2021-11-19
WO2020217563A1 (ja) 2020-10-29
JP2021038136A (ja) 2021-03-11
EP3960914A4 (en) 2022-12-28

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