WO2020217563A1 - 半導体膜 - Google Patents

半導体膜 Download PDF

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Publication number
WO2020217563A1
WO2020217563A1 PCT/JP2019/035513 JP2019035513W WO2020217563A1 WO 2020217563 A1 WO2020217563 A1 WO 2020217563A1 JP 2019035513 W JP2019035513 W JP 2019035513W WO 2020217563 A1 WO2020217563 A1 WO 2020217563A1
Authority
WO
WIPO (PCT)
Prior art keywords
film
semiconductor film
substrate
layer
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2019/035513
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English (en)
French (fr)
Japanese (ja)
Inventor
守道 渡邊
福井　宏史
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=72941625&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=WO2020217563(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Priority to JP2020538732A priority Critical patent/JP6784870B1/ja
Priority to EP19925739.5A priority patent/EP3960914A4/en
Priority to CN201980093708.7A priority patent/CN113677833B/zh
Publication of WO2020217563A1 publication Critical patent/WO2020217563A1/ja
Priority to US17/450,705 priority patent/US11942520B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2926—Crystal orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes

Definitions

  • An example is shown in which the blade-shaped dislocation and the spiral dislocation are 3 ⁇ 10 8 / cm 2 and 6 ⁇ 10 8 / cm 2 , respectively.
  • a semiconductor film having a collapsible crystal structure composed of an ⁇ -Ga 2 O 3 or ⁇ -Ga 2 O 3 system solid solution, which is a surface of at least one of the semiconductor films.
  • a semiconductor film having a crystal defect density of 1.0 ⁇ 10 6 / cm 2 or less is provided.
  • the crystal defect density of the semiconductor film is preferably smaller on one surface of the semiconductor film (hereinafter referred to as the front surface) than on the surface facing the surface (hereinafter referred to as the back surface). In other words, it is preferable to satisfy the relationship of (crystal defect density on the back surface) / (crystal defect density on the front surface)> 1.
  • the film-forming side The crystal defect density on the surface of the film may be smaller than the crystal defect density on the surface adjacent to the substrate for film formation.
  • additives such as a binder, a plasticizer, a dispersant, and a dispersion medium are appropriately added to the raw material powder to form a slurry, and the slurry is passed through a narrow slit-shaped discharge port to form a sheet. It is preferable to discharge and mold.
  • the thickness of the molded product formed into a sheet is not limited, but is preferably 5 to 500 ⁇ m from the viewpoint of handling. Further, when a thick orientation precursor layer is required, a large number of these sheet molded products may be stacked and used as a desired thickness.
  • the obtained semiconductor film can be formed as it is or divided into semiconductor elements.
  • the semiconductor film may be peeled off from the composite substrate to form a single film.
  • a peeling layer may be provided in advance on the alignment layer surface (deposition surface) of the composite base substrate.
  • Examples of such a release layer include those provided with a C injection layer and an H injection layer on the surface of the composite substrate. Further, C or H may be injected into the film at the initial stage of film formation of the semiconductor film to provide a release layer on the semiconductor film side.
  • the AD film formation conditions were as follows. That is, the carrier gas was N 2, and a ceramic nozzle having a slit having a long side of 5 mm and a short side of 0.3 mm was used.
  • the scanning conditions of the nozzle are 0.5 mm / s, movement of 55 mm perpendicular to the long side of the slit and in the forward direction, movement of 5 mm in the direction of the long side of the slit, and vertical and return to the long side of the slit. Repeated scanning of moving 55 mm in the direction, moving 5 mm in the long side direction of the slit and in the direction opposite to the initial position, and when moving 55 mm from the initial position in the long side direction of the slit, scan in the opposite direction.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Chemical Vapour Deposition (AREA)
PCT/JP2019/035513 2019-04-24 2019-09-10 半導体膜 Ceased WO2020217563A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2020538732A JP6784870B1 (ja) 2019-04-24 2019-09-10 半導体膜
EP19925739.5A EP3960914A4 (en) 2019-04-24 2019-09-10 SEMICONDUCTOR FILM
CN201980093708.7A CN113677833B (zh) 2019-04-24 2019-09-10 半导体膜
US17/450,705 US11942520B2 (en) 2019-04-24 2021-10-13 Semiconductor film

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019017515 2019-04-24
JPPCT/JP2019/017515 2019-04-24

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US17/450,705 Continuation US11942520B2 (en) 2019-04-24 2021-10-13 Semiconductor film

Publications (1)

Publication Number Publication Date
WO2020217563A1 true WO2020217563A1 (ja) 2020-10-29

Family

ID=72941625

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2019/035513 Ceased WO2020217563A1 (ja) 2019-04-24 2019-09-10 半導体膜

Country Status (5)

Country Link
US (1) US11942520B2 (https=)
EP (1) EP3960914A4 (https=)
JP (2) JP6784870B1 (https=)
CN (1) CN113677833B (https=)
WO (1) WO2020217563A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023048150A1 (ja) * 2021-09-22 2023-03-30 株式会社Flosfia 結晶膜の製造方法および結晶膜
CN116964243A (zh) * 2021-03-12 2023-10-27 信越化学工业株式会社 氧化物半导体膜及其成膜方法、半导体装置
WO2025203572A1 (ja) * 2024-03-29 2025-10-02 日本碍子株式会社 下地基板

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102546042B1 (ko) * 2021-12-22 2023-06-22 주식회사루미지엔테크 HVPE법에 따른 Ga2O3 결정막 증착방법, 증착장치 및 이를 사용한 Ga2O3 결정막 증착 기판

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JP2014072533A (ja) 2013-10-10 2014-04-21 Roca Kk 半導体装置
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Cited By (3)

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Publication number Priority date Publication date Assignee Title
CN116964243A (zh) * 2021-03-12 2023-10-27 信越化学工业株式会社 氧化物半导体膜及其成膜方法、半导体装置
WO2023048150A1 (ja) * 2021-09-22 2023-03-30 株式会社Flosfia 結晶膜の製造方法および結晶膜
WO2025203572A1 (ja) * 2024-03-29 2025-10-02 日本碍子株式会社 下地基板

Also Published As

Publication number Publication date
CN113677833B (zh) 2024-08-23
US11942520B2 (en) 2024-03-26
JP7410009B2 (ja) 2024-01-09
EP3960914A1 (en) 2022-03-02
JPWO2020217563A1 (ja) 2021-05-06
US20220028982A1 (en) 2022-01-27
JP6784870B1 (ja) 2020-11-11
CN113677833A (zh) 2021-11-19
JP2021038136A (ja) 2021-03-11
EP3960914A4 (en) 2022-12-28

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