JP2021007147A - 支持ユニット、これを含む基板処理装置 - Google Patents
支持ユニット、これを含む基板処理装置 Download PDFInfo
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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Abstract
Description
4100 支持プレート
4110 減圧流路
4112 メーン流路
4114 第1流路
4116 第2流路
4120 第1溝
4122 第1係止段
4130 第2溝
4132 第2係止段
4140 真空ホール
4150 分離ホール
4160 熱伝達流路
4200 減圧部材
4300 温度調節部材
4310 冷媒供給源
4312 冷媒供給ライン
4314 排出ライン
4400 フランジャー
4401 第1ボディー
4402 第2ボディー
4403 貫通ホール
4405 挿入段
4410 第1係止部材
4420 弾性部材
4500 ピン
4510 第2係止部材
Claims (20)
- 基板を処理する装置において、
内部に空間を有するハウジングと、
前記空間で基板を支持する支持ユニットと、を含み、
前記支持ユニットは、
内部に減圧流路が形成された支持プレートと、
前記支持プレートの温度を調節する温度調節部材と、
前記支持プレートの上面に形成された溝に提供されるフランジャーと、を含み、
前記溝で前記フランジャーの下部領域は、前記減圧流路に連結され、
前記フランジャーは、前記減圧流路が提供する減圧によって上下に移動される基板処理装置。 - 前記フランジャーには前記フランジャーの上部と下部を貫通する貫通ホールが形成され、
前記貫通ホールは、前記減圧流路と連通される請求項1に記載の基板処理装置。 - 前記フランジャーは、
第1ボディーと、
前記第1ボディーの上面から上方向に延長され、前記第1ボディーより小さい直径を有する第2ボディーを含む請求項2に記載の基板処理装置。 - 前記溝には前記溝の側方向に段差れる係止段が形成され、
前記第1ボディーの上面と前記係止段との間には係止部材が提供される請求項3に記載の基板処理装置。 - 前記第1ボディーの下面には弾性部材が提供される請求項3に記載の基板処理装置。
- 前記第1ボディーには前記第1ボディーの下面から上方向に湾入される挿入段が形成され、
前記挿入段は、前記貫通ホールと連通され、
前記挿入段には弾性部材が挿入される請求項3に記載の基板処理装置。 - 前記第2ボディーの上端は、ラウンド(Round)になった形状を有する請求項3に記載の基板処理装置。
- 前記装置は、
前記支持ユニットを制御する制御器をさらに含み、
前記制御器は、
前記支持ユニットに支持された基板の温度を調節する時,前記減圧流路が減圧を提供して前記フランジャーを下方向に移動させて前記支持プレートと基板との間の間隔を狭くするように前記支持ユニットを制御する請求項1乃至請求項7のいずれかの一項に記載の基板処理装置。 - 前記支持プレートにはピンが提供され、
前記支持プレートの上面から前記ピンの上端までの間隔が第1間隔に提供される請求項1乃至請求項7のいずれかの一項に記載の基板処理装置。 - 前記フランジャーは、
前記減圧流路に減圧が提供されなければ、前記支持プレートの上面から前記フランジャーの上端までの間隔は、第2間隔であり、
前記減圧流路に減圧が提供されれば、前記支持プレートの上面から前記フランジャーの上端までの間隔は第3間隔であり、
前記第2間隔は、前記第1間隔より大きく、
前記第3間隔は、前記第1間隔より小さいか、或いは同一であるな請求項9に記載の基板処理装置。 - 前記減圧流路は、
メーン流路と、
前記メーン流路から分岐される第1流路と、
前記第1流路が分岐される地点と異なる地点で前記メーン流路から分岐される第2流路と、を含み、
前記第1流路は、前記溝と連結され、
前記第2流路は、前記支持プレートの上面まで延長される請求項1乃至請求項7のいずれかの一項に記載の基板処理装置。 - 前記支持プレートには前記温度調節部材が供給する流体が流れる熱伝達流路が形成される請求項1乃至請求項7のいずれかの一項に記載の基板処理装置。
- 基板を支持する支持ユニットにおいて、
内部に減圧流路が形成された支持プレートと、
前記支持プレートの上面に形成された溝に提供されるフランジャーと、を含み、
前記溝で前記フランジャーの下部領域は、前記減圧流路に連結され、
前記フランジャーは、前記減圧流路が提供する減圧によって上下に移動される支持ユニット。 - 前記フランジャーには前記フランジャーの上部と下部を貫通する貫通ホールが形成され、
前記貫通ホールは、前記減圧流路と連通される請求項13に記載の支持ユニット。 - 前記フランジャーは、
第1ボディーと、
前記第1ボディーの上面から上方向に延長され、前記第1ボディーより小さい直径を有する第2ボディーと、を含む請求項14に記載の支持ユニット。 - 前記溝には前記溝の側方向に段差れる係止段が形成され、
前記第1ボディーの上面と前記係止段との間には係止部材が提供される請求項15に記載の支持ユニット。 - 前記第1ボディーの下面には弾性部材が提供される請求項15に記載の支持ユニット。
- 前記第1ボディーには前記第1ボディーの下面から上方向に湾入される挿入段が形成され、
前記挿入段は、前記貫通ホールと連通され、
前記挿入段には弾性部材が挿入される請求項15に記載の支持ユニット。 - 前記弾性部材は、スプリングである請求項17又は請求項18に記載の支持ユニット。
- 前記第2ボディーの上端は、ラウンド(Round)になった形状を有する請求項15に記載の支持ユニット。
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KR1020190076897A KR102263713B1 (ko) | 2019-06-27 | 2019-06-27 | 지지 유닛, 이를 포함하는 기판 처리 장치 |
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CN116230601B (zh) * | 2022-12-29 | 2023-11-10 | 扬州韩思半导体科技有限公司 | 一种半导体晶圆制造用等离子去胶装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2005518655A (ja) * | 2001-07-15 | 2005-06-23 | アプライド マテリアルズ インコーポレイテッド | 処理システム |
JP2008103707A (ja) * | 2006-09-22 | 2008-05-01 | Hitachi Kokusai Electric Inc | 基板処理装置および半導体装置の製造方法 |
JP2009021596A (ja) * | 2007-07-11 | 2009-01-29 | Semes Co Ltd | プレート、これを有する基板温度調節装置及びこれを有する基板処理装置。 |
JP2012099787A (ja) * | 2010-10-07 | 2012-05-24 | Tokyo Electron Ltd | 熱処理装置および熱処理方法 |
JP2012146783A (ja) * | 2011-01-11 | 2012-08-02 | Murata Mfg Co Ltd | 基板吸着装置 |
JP2018190815A (ja) * | 2017-05-01 | 2018-11-29 | 日本特殊陶業株式会社 | 真空吸着部材 |
Family Cites Families (13)
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JP4755498B2 (ja) * | 2006-01-06 | 2011-08-24 | 東京エレクトロン株式会社 | 加熱装置及び加熱方法 |
KR200429783Y1 (ko) | 2006-08-17 | 2006-10-27 | 주식회사 좋은기술 | 히팅 플레이트의 정전기 방지장치 |
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JP3180048U (ja) | 2012-09-20 | 2012-11-29 | 東京エレクトロン株式会社 | 熱処理装置 |
JP6316181B2 (ja) * | 2014-12-18 | 2018-04-25 | 東京エレクトロン株式会社 | 基板保持ステージ |
JP6789040B2 (ja) * | 2016-08-30 | 2020-11-25 | 東京応化工業株式会社 | 基板加熱装置及び基板加熱方法 |
JP6894256B2 (ja) * | 2017-02-23 | 2021-06-30 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
JP6554516B2 (ja) * | 2017-08-31 | 2019-07-31 | 東京応化工業株式会社 | 基板加熱装置、基板処理システム及び基板加熱方法 |
KR102000010B1 (ko) * | 2018-10-30 | 2019-07-17 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005518655A (ja) * | 2001-07-15 | 2005-06-23 | アプライド マテリアルズ インコーポレイテッド | 処理システム |
JP2008103707A (ja) * | 2006-09-22 | 2008-05-01 | Hitachi Kokusai Electric Inc | 基板処理装置および半導体装置の製造方法 |
JP2009021596A (ja) * | 2007-07-11 | 2009-01-29 | Semes Co Ltd | プレート、これを有する基板温度調節装置及びこれを有する基板処理装置。 |
JP2012099787A (ja) * | 2010-10-07 | 2012-05-24 | Tokyo Electron Ltd | 熱処理装置および熱処理方法 |
JP2012146783A (ja) * | 2011-01-11 | 2012-08-02 | Murata Mfg Co Ltd | 基板吸着装置 |
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CN112151414A (zh) | 2020-12-29 |
US11320752B2 (en) | 2022-05-03 |
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