JP2020529127A - 単結晶シリコンのエピタキシャル被覆半導体ウェハおよびその製造方法 - Google Patents
単結晶シリコンのエピタキシャル被覆半導体ウェハおよびその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 50
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 238000000034 method Methods 0.000 claims abstract description 20
- 239000002019 doping agent Substances 0.000 claims abstract description 7
- 235000012431 wafers Nutrition 0.000 claims description 101
- 239000007789 gas Substances 0.000 claims description 35
- 230000005855 radiation Effects 0.000 claims description 24
- 239000001257 hydrogen Substances 0.000 claims description 13
- 229910052739 hydrogen Inorganic materials 0.000 claims description 13
- 238000012545 processing Methods 0.000 claims description 13
- 230000028161 membrane depolarization Effects 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- 239000011261 inert gas Substances 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 150000002431 hydrogen Chemical class 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 24
- 229910052786 argon Inorganic materials 0.000 description 12
- 238000005259 measurement Methods 0.000 description 7
- 239000012141 concentrate Substances 0.000 description 6
- 238000000265 homogenisation Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 2
- 239000005052 trichlorosilane Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Abstract
Description
単結晶シリコンのエピタキシャル被覆半導体ウェハは、電子部品を製造するための前駆体として必要である。それらは電気特性が優れているため、単結晶シリコンの研磨半導体ウェハよりも好まれることが多い。これは、たとえば、CMOSイメージセンサ、すなわち略してCIS部品と称されるものの製造に関する場合である。
直径が300mm以上の単結晶シリコンの基板ウェハを提供することと、
個々のウェハを被覆するための装置のサセプタの上に基板ウェハを配置することとを含み、装置は環状領域を有する上側カバーを有しており、環状領域は、基板ウェハのエッジ領域において環状領域を透過する放射を集中させ、方法はさらに、
装置の上側カバーの上方に配置された放射源によって、基板ウェハを堆積温度に加熱することと、
加熱した基板ウェハ上に処理ガスを流すことによってシリコンのエピタキシャル層を堆積することとを含み、処理ガスは水素、不活性ガスおよび堆積ガスを含み、堆積ガスはドーパントおよびシリコン源を含む方法によって達成される。
単結晶シリコンの半導体ウェハを本発明の方法によって製造し、比較のために、異なる方法によっても半導体ウェハを製造した。
1 上側カバー
2 下側カバー
3 側壁
4 基板ウェハ
5 サセプタ
6 放射源
7 上側カバーの環状領域
8 通過する放射
9 エピタキシャル層
10 材料
Claims (7)
- 直径が300mm以上の単結晶シリコンの半導体ウェハであって、
単結晶シリコンの基板ウェハと、前記基板ウェハの上の単結晶シリコンのドーパント含有エピタキシャル層とを備え、前記エピタキシャル層の厚みの不均一性は0.5%以下であり、前記エピタキシャル層の比電気抵抗の不均一性は2%以下である、半導体ウェハ。 - 前記エピタキシャル層の厚みは1μm以上20μm以下である、請求項1に記載の半導体ウェハ。
- 前記半導体ウェハは、0.5mmのエッジを除く、前記半導体ウェハのエッジからの距離が最大15mmのエッジ領域において、30偏光解消単位以下の偏光解消度を生じさせるSIRD応力を有する、請求項1または2に記載の半導体ウェハ。
- 単結晶シリコンの被覆半導体ウェハを製造する方法であって、
直径が300mm以上の単結晶シリコンの基板ウェハを提供することと、
個々のウェハを被覆するための装置のサセプタの上に、前記基板ウェハを配置することとを備え、前記装置は環状領域を有する上側カバーを有しており、前記環状領域は、前記基板ウェハのエッジ領域において前記環状領域を透過する放射を集中させ、前記方法はさらに、
前記装置の前記上側カバーの上方に配置された放射源によって、前記基板ウェハを堆積温度に加熱することと、
加熱した前記基板ウェハ上に処理ガスを流すことによってシリコンのエピタキシャル層を堆積することとを備え、前記処理ガスは水素、不活性ガスおよび堆積ガスを備え、前記堆積ガスはドーパントおよびシリコン源を備える、方法。 - 前記基板ウェハの前記エッジ領域は、前記基板ウェハのエッジからの距離が最大15mmである、請求項4に記載の方法。
- 加熱した前記基板ウェハ上に6以上20以下の体積比で水素および不活性ガスを流すことを備える、請求項4または5に記載の方法。
- 前記上側カバーの前記環状領域の断面は、上向きの凸状湾曲部、またはフレネルレンズの外形を有する、請求項4から6のいずれか1項に記載の方法。
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DE102017212799.6 | 2017-07-26 | ||
DE102017212799.6A DE102017212799A1 (de) | 2017-07-26 | 2017-07-26 | Epitaktisch beschichtete Halbleiterscheibe aus einkristallinem Silizium und Verfahren zu deren Herstellung |
PCT/EP2018/068888 WO2019020387A1 (de) | 2017-07-26 | 2018-07-12 | Epitaktisch beschichtete halbleiterscheibe aus einkristallinem silizium und verfahren zu deren herstellung |
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DE102019216267A1 (de) | 2019-10-23 | 2021-04-29 | Siltronic Ag | Verfahren zur Herstellung von Halbleiterscheiben |
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EP3659173A1 (de) | 2020-06-03 |
TW201910571A (zh) | 2019-03-16 |
CN110998787A (zh) | 2020-04-10 |
SG11202000675TA (en) | 2020-02-27 |
KR102320760B1 (ko) | 2021-11-01 |
TWI672402B (zh) | 2019-09-21 |
US11578424B2 (en) | 2023-02-14 |
IL271984B2 (en) | 2023-04-01 |
KR20200015763A (ko) | 2020-02-12 |
CN110998787B (zh) | 2023-11-03 |
IL271984A (en) | 2020-02-27 |
IL271984B (en) | 2022-12-01 |
US20210087705A1 (en) | 2021-03-25 |
DE102017212799A1 (de) | 2019-01-31 |
JP7059351B2 (ja) | 2022-04-25 |
WO2019020387A1 (de) | 2019-01-31 |
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