JP7059351B2 - 単結晶シリコンのエピタキシャル被覆半導体ウェハの製造方法 - Google Patents
単結晶シリコンのエピタキシャル被覆半導体ウェハの製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 41
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 235000012431 wafers Nutrition 0.000 claims description 93
- 239000000758 substrate Substances 0.000 claims description 45
- 239000007789 gas Substances 0.000 claims description 35
- 230000005855 radiation Effects 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 20
- 239000001257 hydrogen Substances 0.000 claims description 14
- 229910052739 hydrogen Inorganic materials 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 11
- 238000012545 processing Methods 0.000 claims description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 9
- 239000011261 inert gas Substances 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000002019 doping agent Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 24
- 229910052786 argon Inorganic materials 0.000 description 12
- 230000028161 membrane depolarization Effects 0.000 description 10
- 238000005259 measurement Methods 0.000 description 7
- 239000012141 concentrate Substances 0.000 description 6
- 238000000265 homogenisation Methods 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 2
- 239000005052 trichlorosilane Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Description
単結晶シリコンのエピタキシャル被覆半導体ウェハは、電子部品を製造するための前駆体として必要である。それらは電気特性が優れているため、単結晶シリコンの研磨半導体ウェハよりも好まれることが多い。これは、たとえば、CMOSイメージセンサ、すなわち略してCIS部品と称されるものの製造に関する場合である。
直径が300mm以上の単結晶シリコンの基板ウェハを提供することと、
個々のウェハを被覆するための装置のサセプタの上に基板ウェハを配置することとを含み、装置は環状領域を有する上側カバーを有しており、環状領域は、基板ウェハのエッジ領域において環状領域を透過する放射を集中させ、方法はさらに、
装置の上側カバーの上方に配置された放射源によって、基板ウェハを堆積温度に加熱することと、
加熱した基板ウェハ上に処理ガスを流すことによってシリコンのエピタキシャル層を堆積することとを含み、処理ガスは水素、不活性ガスおよび堆積ガスを含み、堆積ガスはドーパントおよびシリコン源を含む方法によって達成される。
単結晶シリコンの半導体ウェハを本発明の方法によって製造し、比較のために、異なる方法によっても半導体ウェハを製造した。
1 上側カバー
2 下側カバー
3 側壁
4 基板ウェハ
5 サセプタ
6 放射源
7 上側カバーの環状領域
8 通過する放射
9 エピタキシャル層
10 材料
Claims (3)
- 単結晶シリコンの被覆半導体ウェハを製造する方法であって、
直径が300mm以上の前記単結晶シリコンの基板ウェハを提供することと、
個々のウェハを被覆するための装置のサセプタの上に、前記基板ウェハを配置することとを備え、前記装置は環状領域を有する上側カバーを有しており、前記環状領域は、前記基板ウェハのエッジ領域において前記環状領域を透過する放射を集中させ、前記方法はさらに、
前記装置の前記上側カバーの上方に配置された放射源によって、前記基板ウェハを堆積温度に加熱することと、
加熱した前記基板ウェハ上に水素と堆積ガスとを備える処理ガスを流すことによってシリコンのエピタキシャル層を堆積することとを備え、前記堆積ガスはドーパントおよびシリコン源を備え、前記処理ガスは不活性ガスをさらに備え、加熱した前記基板ウェハ上に前記水素の流量を前記不活性ガスの流量で除した値である体積比が6以上20以下となるように前記水素および前記不活性ガスが流されることを特徴とする、方法。 - 前記基板ウェハの前記エッジ領域は、前記基板ウェハのエッジからの距離が最大15mmである、請求項1に記載の方法。
- 前記上側カバーの前記環状領域の断面は、上向きの凸状湾曲部、またはフレネルレンズの外形を有する、請求項1または2に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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DE102017212799.6A DE102017212799A1 (de) | 2017-07-26 | 2017-07-26 | Epitaktisch beschichtete Halbleiterscheibe aus einkristallinem Silizium und Verfahren zu deren Herstellung |
DE102017212799.6 | 2017-07-26 | ||
PCT/EP2018/068888 WO2019020387A1 (de) | 2017-07-26 | 2018-07-12 | Epitaktisch beschichtete halbleiterscheibe aus einkristallinem silizium und verfahren zu deren herstellung |
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JP2020529127A JP2020529127A (ja) | 2020-10-01 |
JP7059351B2 true JP7059351B2 (ja) | 2022-04-25 |
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US (1) | US11578424B2 (ja) |
EP (1) | EP3659173A1 (ja) |
JP (1) | JP7059351B2 (ja) |
KR (1) | KR102320760B1 (ja) |
CN (1) | CN110998787B (ja) |
DE (1) | DE102017212799A1 (ja) |
IL (1) | IL271984B2 (ja) |
SG (1) | SG11202000675TA (ja) |
TW (1) | TWI672402B (ja) |
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DE102019216267A1 (de) | 2019-10-23 | 2021-04-29 | Siltronic Ag | Verfahren zur Herstellung von Halbleiterscheiben |
EP3940124B1 (de) | 2020-07-14 | 2024-01-03 | Siltronic AG | Kristallstück aus monokristallinem silizium |
EP3957776A1 (de) * | 2020-08-17 | 2022-02-23 | Siltronic AG | Verfahren zum abscheiden einer epitaktischen schicht auf einer substratscheibe |
CN114093989B (zh) * | 2021-09-30 | 2023-11-14 | 华灿光电(浙江)有限公司 | 深紫外发光二极管外延片及其制造方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2000091237A (ja) | 1998-09-09 | 2000-03-31 | Shin Etsu Handotai Co Ltd | 半導体ウェーハの製造方法 |
JP2002064069A (ja) | 2000-08-17 | 2002-02-28 | Tokyo Electron Ltd | 熱処理装置 |
US20040067052A1 (en) | 2002-10-03 | 2004-04-08 | Goodman Matthew G. | Localized heating of substrates using optics |
JP2009272633A (ja) | 2008-05-09 | 2009-11-19 | Siltronic Ag | エピタキシャル被覆された半導体ウェハの製造方法 |
JP2012019216A (ja) | 2010-07-07 | 2012-01-26 | Siltronic Ag | 半導体ウェハを検査するための方法および半導体ウェハのエッジを検査するための装置 |
JP2012146697A (ja) | 2011-01-06 | 2012-08-02 | Shin Etsu Handotai Co Ltd | エピタキシャルウェーハの製造装置及び製造方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6441212A (en) * | 1987-08-07 | 1989-02-13 | Nec Corp | Semiconductor crystal growth method |
JP2781616B2 (ja) | 1989-09-29 | 1998-07-30 | 株式会社日立製作所 | 半導体ウエハの熱処理装置 |
US5227330A (en) * | 1991-10-31 | 1993-07-13 | International Business Machines Corporation | Comprehensive process for low temperature SI epit axial growth |
JP2822756B2 (ja) * | 1992-03-10 | 1998-11-11 | 日本電気株式会社 | 気相成長装置およびその薄膜形成方法 |
US6437290B1 (en) * | 2000-08-17 | 2002-08-20 | Tokyo Electron Limited | Heat treatment apparatus having a thin light-transmitting window |
DE10065895C1 (de) * | 2000-11-17 | 2002-05-23 | Infineon Technologies Ag | Elektronisches Bauteil mit Abschirmung und Verfahren zu seiner Herstellung |
JP5216183B2 (ja) * | 2004-04-13 | 2013-06-19 | 日産自動車株式会社 | 半導体装置 |
US8501594B2 (en) * | 2003-10-10 | 2013-08-06 | Applied Materials, Inc. | Methods for forming silicon germanium layers |
DE102004054564B4 (de) * | 2004-11-11 | 2008-11-27 | Siltronic Ag | Halbleitersubstrat und Verfahren zu dessen Herstellung |
DE102006055038B4 (de) | 2006-11-22 | 2012-12-27 | Siltronic Ag | Epitaxierte Halbleiterscheibe sowie Vorrichtung und Verfahren zur Herstellung einer epitaxierten Halbleiterscheibe |
US7820527B2 (en) * | 2008-02-20 | 2010-10-26 | Varian Semiconductor Equipment Associates, Inc. | Cleave initiation using varying ion implant dose |
US8048807B2 (en) | 2008-09-05 | 2011-11-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for thinning a substrate |
JP5141541B2 (ja) * | 2008-12-24 | 2013-02-13 | 株式会社Sumco | エピタキシャルウェーハの製造方法 |
DE102009010556B4 (de) | 2009-02-25 | 2013-11-07 | Siltronic Ag | Verfahren zur Herstellung von epitaxierten Siliciumscheiben |
JP5446760B2 (ja) | 2009-11-16 | 2014-03-19 | 株式会社Sumco | エピタキシャル成長方法 |
KR20110087440A (ko) * | 2010-01-26 | 2011-08-03 | 주식회사 엘지실트론 | 반도체 제조용 서셉터 및 이를 포함하는 반도체 제조 장치 |
JP5470414B2 (ja) | 2012-03-09 | 2014-04-16 | 株式会社半導体エネルギー研究所 | 発光装置及び電子機器 |
CN104142259A (zh) * | 2013-05-10 | 2014-11-12 | 河南协鑫光伏科技有限公司 | 一种太阳能单晶硅测试样片的制作方法 |
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000091237A (ja) | 1998-09-09 | 2000-03-31 | Shin Etsu Handotai Co Ltd | 半導体ウェーハの製造方法 |
JP2002064069A (ja) | 2000-08-17 | 2002-02-28 | Tokyo Electron Ltd | 熱処理装置 |
US20040067052A1 (en) | 2002-10-03 | 2004-04-08 | Goodman Matthew G. | Localized heating of substrates using optics |
JP2009272633A (ja) | 2008-05-09 | 2009-11-19 | Siltronic Ag | エピタキシャル被覆された半導体ウェハの製造方法 |
JP2012019216A (ja) | 2010-07-07 | 2012-01-26 | Siltronic Ag | 半導体ウェハを検査するための方法および半導体ウェハのエッジを検査するための装置 |
JP2012146697A (ja) | 2011-01-06 | 2012-08-02 | Shin Etsu Handotai Co Ltd | エピタキシャルウェーハの製造装置及び製造方法 |
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TWI672402B (zh) | 2019-09-21 |
DE102017212799A1 (de) | 2019-01-31 |
EP3659173A1 (de) | 2020-06-03 |
IL271984B2 (en) | 2023-04-01 |
KR20200015763A (ko) | 2020-02-12 |
IL271984B (en) | 2022-12-01 |
JP2020529127A (ja) | 2020-10-01 |
IL271984A (en) | 2020-02-27 |
US11578424B2 (en) | 2023-02-14 |
SG11202000675TA (en) | 2020-02-27 |
CN110998787B (zh) | 2023-11-03 |
TW201910571A (zh) | 2019-03-16 |
US20210087705A1 (en) | 2021-03-25 |
CN110998787A (zh) | 2020-04-10 |
KR102320760B1 (ko) | 2021-11-01 |
WO2019020387A1 (de) | 2019-01-31 |
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