JP2020522120A - 正確なチップ間分離のためのストッパとしてのピラー - Google Patents
正確なチップ間分離のためのストッパとしてのピラー Download PDFInfo
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Abstract
Description
102 第2の基板
104 レイアウト
106 第1の回路素子
108 拡散障壁
114 レイアウト
115 最大横寸法
116 バンプボンド
118 ピラー
120 第2の回路素子
140 積層デバイス
142 分離距離
200 基板
202 第1のレジスト層
203 厚さ
204 開口
205 幅
206 ピラー
208 余剰成膜材料
210 第2のレジスト層
211 厚さ
212 幅
214 開口
216 バンプボンド
218 余剰成膜材料
302 第1の基板
304 バンプボンド
306 第2の基板
307 力
309 所定の分離距離
311 力
312 第1の基板
314 バンプボンド
316 第2の基板
318 ピラー
320 厚さ
322 幅
322a 第1の幅
322b 第2の幅
402 積層デバイス
404 力
406 整合マーク
408 整合幅
502 ピラー
504 回路素子
506 バンプボンド
512 ピラー
514 回路素子
516 バンプボンド
522 ピラー
524 回路素子
526 バンプボンド
Claims (17)
- 量子情報処理デバイスを備える第1の基板と、
前記第1の基板に接合される第2の基板と、
前記第1の基板と前記第2の基板との間の複数のバンプボンドであって、前記複数のバンプボンドの各バンプボンドが前記第1の基板と前記第2の基板との間の電気接続を提供する、複数のバンプボンドと、
前記第1の基板と前記第2の基板との間の少なくとも1つのピラーであって、前記第1の基板の第1の表面と前記第2の基板の第1の表面との間の分離距離を定め、各ピラーの横断面積が前記複数のバンプボンドの各バンプボンドの横断面積より大きく、各ピラーのおよび各バンプボンドの前記横断面積が、前記第1の基板の前記第1の表面にまたは前記第2の基板の前記第1の表面に平行な平面に沿って定められる、少なくとも1つのピラーと
を備えるデバイス。 - 前記複数のバンプボンドが超伝導バンプボンドである、請求項1に記載のデバイス。
- 前記複数のバンプボンドがインジウムバンプボンドである、請求項2に記載のデバイス。
- 前記複数のバンプボンドの第1のバンプボンドが第1の量子情報処理デバイスと前記第2の基板上の回路素子との間の電気接続を提供する、請求項1に記載のデバイス。
- 前記第1の基板と前記第2の基板との間の前記少なくとも1つのピラーが超伝導ピラーである、請求項1に記載のデバイス。
- 前記少なくとも1つのピラーがインジウムである、請求項5に記載のデバイス。
- 前記第1の基板上の前記少なくとも1つの量子情報処理デバイスが量子ビットである、請求項1に記載のデバイス。
- 前記少なくとも1つのピラーが円環であり、それにより前記第1の基板および前記第2の基板が前記分離距離にあるときに、前記円環は前記第1の基板上の前記少なくとも1つの量子情報処理デバイスを取り囲む、請求項1に記載のデバイス。
- 前記少なくとも1つのピラーが前記第1の基板上の回路素子と前記第2の基板上の回路素子との間の電気接続を提供する、請求項1に記載のデバイス。
- 第1の基板を設けるステップと、
第2の基板を設けるステップであって、前記第1の基板が複数のバンプボンドを備える、ステップと、
前記第1の基板上に少なくとも1つのピラーを設けるステップであって、各ピラーの厚さが前記複数のバンプボンドの各バンプボンドの厚さより小さく、前記厚さが、前記少なくとも1つのピラーが形成される前記第1の基板の第1の表面に垂直である方向に沿って延びる、ステップと、
前記第2の基板に前記第1の基板を接合するステップであって、前記接合が、前記第1の基板と前記第2の基板との間に力を印加して、前記複数のバンプボンドを前記少なくとも1つのピラーの前記厚さと同じ厚さに圧縮するステップを含む、ステップと
を含む方法。 - 前記第1の基板と前記第2の基板との間に前記力を印加するステップが前記少なくとも1つのピラーを圧縮し、それにより前記少なくとも1つのピラーの幅が拡大する、請求項10に記載の方法。
- 前記少なくとも1つのピラーの前記拡大を測定するステップを含む、請求項11に記載の方法。
- 前記少なくとも1つのピラーの前記拡大を測定するステップが、端視顕微鏡を使用して、前記第1の基板と前記第2の基板との間の間隙を通して見られる拡大の量を決定するステップを含む、請求項12に記載の方法。
- 前記少なくとも1つのピラーの前記拡大を測定するステップが、前記第1の基板上にパターン化される整合マークに関して前記少なくとも1つのピラーの側方拡大を測定するステップを含む、請求項12に記載の方法。
- 前記第2の基板に前記第1の基板を接合する前に較正力を得るステップを含む、請求項10に記載の方法。
- 前記較正力を得るステップが、
複数のバンプボンドを備える第3の基板を設けるステップと、
第4の基板を設けるステップと、
前記第3の基板と前記第4の基板との間に力を印加して前記第3の基板と前記第4の基板との間の所定の分離距離を達成するステップとを含み、
前記第1の基板と前記第2の基板との間に印加される前記力が、前記第3の基板と前記第4の基板との間に印加される前記力と少なくとも同じ大きさである、請求項15に記載の方法。 - 前記第1の基板と前記第2の基板との間に印加される前記力が、前記第3の基板と前記第4の基板との間に印加される前記力より大きい、請求項16に記載の方法。
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