JP2020508276A - Iii族窒化物層及びダイヤモンド層を有するウエハ - Google Patents
Iii族窒化物層及びダイヤモンド層を有するウエハ Download PDFInfo
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- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 127
- 239000010432 diamond Substances 0.000 title claims abstract description 127
- 150000004767 nitrides Chemical class 0.000 title description 15
- 239000000758 substrate Substances 0.000 claims abstract description 47
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 38
- 239000010703 silicon Substances 0.000 claims abstract description 38
- 239000002245 particle Substances 0.000 claims abstract description 33
- 239000004065 semiconductor Substances 0.000 claims abstract description 27
- -1 nitride compound Chemical class 0.000 claims abstract description 17
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 136
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 132
- 238000000034 method Methods 0.000 claims description 83
- 239000013078 crystal Substances 0.000 claims description 8
- 238000005498 polishing Methods 0.000 claims description 6
- 238000010000 carbonizing Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 229910052799 carbon Inorganic materials 0.000 abstract description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 5
- 125000004432 carbon atom Chemical group C* 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 84
- 238000012545 processing Methods 0.000 description 16
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 13
- 239000000463 material Substances 0.000 description 13
- 229910002704 AlGaN Inorganic materials 0.000 description 11
- 229910002601 GaN Inorganic materials 0.000 description 11
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000007900 aqueous suspension Substances 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 239000000725 suspension Substances 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
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- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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Abstract
Description
Claims (20)
- III族窒化物化合物を含む半導体層と、
前記半導体層上に形成されたSiC層と、
前記SiC層上に形成された中間層と、
前記中間層上に形成されたシード層であり、ダイヤモンド粒子を含むシード層と、
前記シード層上に形成されたダイヤモンド層と、
を有するウエハ。 - 前記SiC層は立方晶系炭化ケイ素を含む、請求項1に記載のウエハ。
- ウエハを形成する方法であって、
シリコン基板上にSiC層を形成し、
前記SiC層上に、III族窒化物化合物を含む半導体層を形成し、
前記シリコン基板を除去して前記SiC層の表面を露出させ、
露出された前記SiC層の前記表面上に中間層を形成し、
前記中間層上に、ダイヤモンド粒子を含むシード層を形成し、
前記シード層上にダイヤモンド層を成長させる、
ことを有する方法。 - 前記SiC層は立方晶系炭化ケイ素を含む、請求項3に記載の方法。
- 前記シード層を形成する工程は、前記ダイヤモンド粒子を前記中間層に付着させることを含み、前記ダイヤモンド粒子は、前記ダイヤモンド層を成長させるためのシード粒子として作用する、請求項3に記載の方法。
- III族窒化物化合物を含む半導体層と、
前記半導体層上に形成された中間層と、
前記中間層上に形成されたシード層であり、ダイヤモンド粒子を含むシード層と、
前記シード層上に形成されたダイヤモンド層と、
を有するウエハ。 - ウエハを形成する方法であって、
シリコン基板上にSiC層を形成し、
前記SiC層上に、III族窒化物化合物を含む半導体層を形成し、
前記シリコン基板及び前記SiC層を除去して前記半導体層の表面を露出させ、
露出された前記半導体層の前記表面上に中間層を形成し、
前記中間層上に、ダイヤモンド粒子を含むシード層を形成し、
前記シード層上にダイヤモンド層を成長させる、
ことを有する方法。 - 前記SiC層は立方晶系炭化ケイ素を含む、請求項7に記載の方法。
- 前記シード層を形成する工程は、前記ダイヤモンド粒子を前記中間層に付着させることを含み、前記ダイヤモンド粒子は、前記ダイヤモンド層を成長させるためのシード粒子として作用する、請求項7に記載の方法。
- 配向結晶構造を持つダイヤモンド層と、
前記ダイヤモンド層上に形成されたSiC層と、
前記SiC層上に形成された、III族窒化物化合物を含む半導体層と、
を有するウエハ。 - 前記SiC層は立方晶系炭化ケイ素を含む、請求項10に記載のウエハ。
- ウエハを形成する方法であって、
シリコン基板上に中間層を形成し、
前記中間層上に、ダイヤモンド粒子を含むシード層を形成し、
前記シード層上にダイヤモンド層を成長させ、
前記ダイヤモンド層上にSiC層を形成し、
前記SiC層上に、III族窒化物化合物を含む半導体層を形成し、
前記シリコン基板、前記シード層及び前記中間層を除去する、
ことを有する方法。 - 前記SiC層は立方晶系炭化ケイ素を含む、請求項12に記載の方法。
- 前記シリコン基板、前記シード層及び前記中間層を除去する工程に先立って、前記半導体層に1つ以上の電子部品を形成する、ことを更に有する請求項12に記載の方法。
- 前記ダイヤモンド層は配向結晶構造を持つ、請求項12に記載の方法。
- ウエハを形成する方法であって、
シリコン基板上に第1のSiC層を形成し、
前記第1のSiC層の表面を炭化し、
炭化した前記第1のSiC層の前記表面上にダイヤモンド層を成長させ、
前記ダイヤモンド層上に第2のSiC層を形成し、
前記第2のSiC層上に、III族窒化物化合物を含む半導体層を形成し、
前記シリコン基板及び前記第1のSiC層を除去する、
ことを有する方法。 - 前記第1のSiC層及び前記第2のSiC層のうちの少なくとも一方が立方晶系炭化ケイ素を含む、請求項16に記載の方法。
- 当該方法は更に、前記第2のSiC層を形成する工程に先立って、前記ダイヤモンド層の表面を研磨することを有し、前記第2のSiC層は、研磨された前記ダイヤモンド層の前記表面上に形成される、請求項16に記載の方法。
- 前記シリコン基板及び前記第1のSiC層を除去する工程に先立って、前記半導体層に1つ以上の電子部品を形成する、ことを更に有する請求項16に記載の方法。
- 前記ダイヤモンド層は配向結晶構造を持つ、請求項16に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US15/693,333 US10128107B1 (en) | 2017-08-31 | 2017-08-31 | Wafers having III-Nitride and diamond layers |
US15/693,333 | 2017-08-31 | ||
PCT/US2018/041172 WO2019045880A1 (en) | 2017-08-31 | 2018-07-08 | PLATES WITH NITRIDE III AND DIAMOND LAYERS |
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JP2020508276A true JP2020508276A (ja) | 2020-03-19 |
JP6858872B2 JP6858872B2 (ja) | 2021-04-14 |
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US (1) | US10128107B1 (ja) |
EP (1) | EP3701560A4 (ja) |
JP (1) | JP6858872B2 (ja) |
KR (1) | KR102286927B1 (ja) |
CN (1) | CN111095480B (ja) |
TW (1) | TWI699818B (ja) |
WO (1) | WO2019045880A1 (ja) |
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TWI683370B (zh) * | 2019-03-12 | 2020-01-21 | 環球晶圓股份有限公司 | 半導體元件及其製造方法 |
EP3745447A1 (en) * | 2019-05-31 | 2020-12-02 | Technische Universität München | Wafer, optical emission device, method of producing a wafer, and method of characterizing a system for producing a wafer |
US11652146B2 (en) | 2020-02-07 | 2023-05-16 | Rfhic Corporation | Method of forming a semiconductor wafer containing a gallium-nitride layer and two diamond layers |
KR102273305B1 (ko) * | 2020-04-23 | 2021-07-06 | 알에프에이치아이씨 주식회사 | 신뢰성을 개선한 다이아몬드 기판 상 질화 갈륨 반도체 구조체 및 이를 제조하는 공정 |
KR102393733B1 (ko) * | 2020-05-07 | 2022-05-06 | 한국세라믹기술원 | 반도체용 다이아몬드 박막 제조방법 |
EP4268268A1 (en) * | 2020-12-22 | 2023-11-01 | Akash Systems, Inc. | Devices having and methods of forming thermally conductive substrates |
CN114038750B (zh) * | 2021-11-05 | 2022-12-02 | 西安电子科技大学芜湖研究院 | 一种氮化镓功率器件的制备方法 |
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CN111095480B (zh) | 2024-04-19 |
EP3701560A4 (en) | 2021-05-12 |
KR20200041289A (ko) | 2020-04-21 |
EP3701560A1 (en) | 2020-09-02 |
TWI699818B (zh) | 2020-07-21 |
TW201921423A (zh) | 2019-06-01 |
JP6858872B2 (ja) | 2021-04-14 |
WO2019045880A1 (en) | 2019-03-07 |
US10128107B1 (en) | 2018-11-13 |
CN111095480A (zh) | 2020-05-01 |
KR102286927B1 (ko) | 2021-08-10 |
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