JP2020177199A - 波長変換部品、波長変換部品の製造方法、及び、発光装置 - Google Patents
波長変換部品、波長変換部品の製造方法、及び、発光装置 Download PDFInfo
- Publication number
- JP2020177199A JP2020177199A JP2019081379A JP2019081379A JP2020177199A JP 2020177199 A JP2020177199 A JP 2020177199A JP 2019081379 A JP2019081379 A JP 2019081379A JP 2019081379 A JP2019081379 A JP 2019081379A JP 2020177199 A JP2020177199 A JP 2020177199A
- Authority
- JP
- Japan
- Prior art keywords
- wavelength conversion
- conversion component
- light
- surrounding
- heat radiating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 247
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000000919 ceramic Substances 0.000 claims abstract description 19
- 230000017525 heat dissipation Effects 0.000 claims abstract description 18
- 230000005855 radiation Effects 0.000 claims abstract description 10
- 239000004065 semiconductor Substances 0.000 claims description 52
- 239000000463 material Substances 0.000 claims description 46
- 239000000853 adhesive Substances 0.000 claims description 28
- 230000001070 adhesive effect Effects 0.000 claims description 28
- 238000005498 polishing Methods 0.000 claims description 11
- 230000005540 biological transmission Effects 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 description 55
- 229910052751 metal Inorganic materials 0.000 description 45
- 239000002184 metal Substances 0.000 description 45
- 239000012788 optical film Substances 0.000 description 41
- 239000002131 composite material Substances 0.000 description 40
- 238000003825 pressing Methods 0.000 description 17
- 238000000034 method Methods 0.000 description 16
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 14
- 230000003287 optical effect Effects 0.000 description 11
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 11
- 239000007789 gas Substances 0.000 description 10
- 238000005245 sintering Methods 0.000 description 10
- 239000011347 resin Substances 0.000 description 9
- 229920005989 resin Polymers 0.000 description 9
- 239000010410 layer Substances 0.000 description 8
- 238000002834 transmittance Methods 0.000 description 7
- 239000011521 glass Substances 0.000 description 6
- 230000005856 abnormality Effects 0.000 description 5
- 239000000654 additive Substances 0.000 description 5
- 230000000996 additive effect Effects 0.000 description 5
- -1 cerium-activated yttrium aluminum garnet Chemical class 0.000 description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 239000006061 abrasive grain Substances 0.000 description 4
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005304 joining Methods 0.000 description 4
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 4
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 4
- 229910001928 zirconium oxide Inorganic materials 0.000 description 4
- 229910015363 Au—Sn Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 238000007088 Archimedes method Methods 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910004283 SiO 4 Inorganic materials 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 235000012215 calcium aluminium silicate Nutrition 0.000 description 1
- 239000000404 calcium aluminium silicate Substances 0.000 description 1
- WNCYAPRTYDMSFP-UHFFFAOYSA-N calcium aluminosilicate Chemical compound [Al+3].[Al+3].[Ca+2].[O-][Si]([O-])=O.[O-][Si]([O-])=O.[O-][Si]([O-])=O.[O-][Si]([O-])=O WNCYAPRTYDMSFP-UHFFFAOYSA-N 0.000 description 1
- 229940078583 calcium aluminosilicate Drugs 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910003443 lutetium oxide Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- MPARYNQUYZOBJM-UHFFFAOYSA-N oxo(oxolutetiooxy)lutetium Chemical compound O=[Lu]O[Lu]=O MPARYNQUYZOBJM-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
- F21V9/30—Elements containing photoluminescent material distinct from or spaced from the light source
- F21V9/32—Elements containing photoluminescent material distinct from or spaced from the light source characterised by the arrangement of the photoluminescent material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0087—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for illuminating phosphorescent or fluorescent materials, e.g. using optical arrangements specifically adapted for guiding or shaping laser beams illuminating these materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02255—Out-coupling of light using beam deflecting elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4056—Edge-emitting structures emitting light in more than one direction
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/30—Semiconductor lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0071—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for beam steering, e.g. using a mirror outside the cavity to change the beam direction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Engineering & Computer Science (AREA)
- Semiconductor Lasers (AREA)
- Optical Filters (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
Description
図1は、第1実施形態に係る波長変換部品10の斜視図である。図2は、波長変換部品10の上面図である。図3Aは、図2のIIIA-IIIA線における波長変換部品10の断面図である。図3Bは、複合部材と放熱部材13が固定される前の断面図である。
次に、波長変換部品の第2実施形態について説明する。第2実施形態に係る波長変換部品20の斜視図は図1と同様である。波長変換部品20の上面図は、図2と同様である。図4Aは、図2のIIIA-IIIA線と同じ位置における波長変換部品20の断面図である。図4Bは、複合部材と放熱部材13が固定される前の断面図である。
次に、波長変換部品の第3実施形態について説明する。図1は、第3実施形態に係る波長変換部品30の斜視図である。図2は、波長変換部品30の上面図である。図5Aは、図2のIIIA-IIIA線と同じ位置における波長変換部品30の断面図である。図5Bは、複合部材と放熱部材13が固定される前の断面図である。
波長変換部品30においては、放熱部材13は、上面側に凸部を有する。この凸部は、中央部分に設けられる。
次に、波長変換部品の第4実施形態について説明する。図6は、第4実施形態に係る波長変換部品40の斜視図である。図7は、波長変換部品40の上面図である。図8Aは、図7のVIIIA-VIIIA線における波長変換部品40の断面図である。図8Bは、複合部材と放熱部材13が固定される前の断面図である。
次に、波長変換部品を有する発光装置の一実施形態を例示して説明する。図9は、実施形態に係る発光装置100の斜視図である。図10は、発光装置100の上面図である。図11は、内部構造を説明するために発光装置100から遮光部材190を除いた状態の斜視図である。図12は、図11と同様の状態における上面図である。図13は、内部構造を説明するために発光装置100からさらに波長変換部品160を除いた状態の斜視図である。図14は、図13と同様の状態における上面図である。図15Aは、波長変換部品160の断面図である。図15Bは、波長変換部品160の分解図である。
まず、基部110の底面111に2つの光反射部材140が配置される。基部110の底面111は構成要素が配置される配置面といえる。2つの光反射部材140は点対称に配置される。また、2つの光反射部材140は、上面視で、光反射面141の上端が、基部110の内側面または外側面と平行あるいは垂直である。
11 波長変換部材
12 包囲部材
13 放熱部材
14 接着剤
15 光学膜
16 導通部材
17 上側押さえ部材
18 下側押さえ部材
19 留め具
100 発光装置
110 基部
111 底面
112 段差部
113 第1段差部
114 第2段差部
120 半導体レーザ素子
130 サブマウント
140 光反射部材
141 光反射面
150 配線
160 波長変換部品
170 放熱部材
171 光学膜
172 金属膜
173 接着剤
180 複合部材
181 波長変換部材
182 包囲部材
183 光学膜
184 導電膜
185 金属膜
190 遮光部材
Claims (11)
- セラミックを主材料として形成される波長変換部材と、
セラミックを主材料として形成され、前記波長変換部材の側面を囲う包囲部材と、
上面が前記波長変換部材及び前記包囲部材の下面と対向して固定される放熱部材と、
を有し、
前記波長変換部材の下面は、前記包囲部材の下面よりも前記放熱部材の側に突出している波長変換部品。 - 対向する前記包囲部材と前記放熱部材の間に介在する介在部材と、
を有する請求項1に記載の波長変換部品。 - 前記介在部材は、
前記包囲部材の下面に設けられる第1介在部材を有する請求項2に記載の波長変換部品。 - 前記介在部材は、
前記放熱部材の上面に設けられる第2介在部材を有する請求項3に記載の波長変換部品。 - 前記第1介在部材と前記第2介在部材とが接着剤を介して接合される請求項4に記載の波長変換部品。
- 前記第1介在部材及び前記第2介在部材は、導電部材であり、
前記接着剤は、導電材料を含む接着剤であり、
前記接着剤を介して接合されることで、前記第1介在部材と前記第2介在部材とが電気的に接続される請求項5に記載の波長変換部品。 - 前記波長変換部材と前記放熱部材とが当接する請求項1乃至6のいずれか一項に記載の波長変換部品。
- 前記波長変換部材は、下面に反射防止膜を有し、
前記反射防止膜を介して、前記波長変換部材と前記放熱部材とが当接する請求項7に記載の波長変換部品。 - 前記放熱部材は、上面に凸部を有し、
前記波長変換部材の下面と前記放熱部材の凸部上面とが当接する請求項7または8に記載の波長変換部品。 - 半導体レーザ素子と、
前記半導体レーザ素子が底面に配され、前記半導体レーザ素子を囲う枠部を有する基部と、
前記半導体レーザ素子の上方に配される、請求項1乃至8のいずれか一項に記載の波長変換部品と、
を有し、
前記波長変換部品における放熱部材は、
前記半導体レーザ素子からの光が透過する透過領域を有し、
前記透過領域を透過した光が前記波長変換部品における波長変換部材に入射する発光装置。 - 波長変換部品を製造する製造方法であって、
いずれもセラミックを主材料とする波長変換部材及び包囲部材であって、それぞれに気体の含有率が異なる前記波長変換部材と前記包囲部材とが固定された一体焼結体を用意する工程と、
下面において、前記波長変換部材が前記包囲部材よりも突出するように、前記一体焼結体の下面を研磨する工程と、
を有する製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019081379A JP7111989B2 (ja) | 2019-04-22 | 2019-04-22 | 波長変換部品、波長変換部品の製造方法、及び、発光装置 |
US16/853,045 US11264544B2 (en) | 2019-04-22 | 2020-04-20 | Wavelength conversion part, method of manufacturing wavelength conversion part, and light emitting device |
CN202010315825.8A CN111834515A (zh) | 2019-04-22 | 2020-04-21 | 波长转换部件、波长转换部件的制造方法以及发光装置 |
EP20170519.1A EP3731286B1 (en) | 2019-04-22 | 2020-04-21 | Wavelength conversion part, method of manufacturing wavelength conversion part, and light emitting device |
US17/581,781 US11469355B2 (en) | 2019-04-22 | 2022-01-21 | Wavelength conversion part, method of manufacturing wavelength conversion part, and light emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019081379A JP7111989B2 (ja) | 2019-04-22 | 2019-04-22 | 波長変換部品、波長変換部品の製造方法、及び、発光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020177199A true JP2020177199A (ja) | 2020-10-29 |
JP7111989B2 JP7111989B2 (ja) | 2022-08-03 |
Family
ID=70390820
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019081379A Active JP7111989B2 (ja) | 2019-04-22 | 2019-04-22 | 波長変換部品、波長変換部品の製造方法、及び、発光装置 |
Country Status (4)
Country | Link |
---|---|
US (2) | US11264544B2 (ja) |
EP (1) | EP3731286B1 (ja) |
JP (1) | JP7111989B2 (ja) |
CN (1) | CN111834515A (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6711333B2 (ja) * | 2017-08-16 | 2020-06-17 | 日亜化学工業株式会社 | 発光装置 |
US11205886B2 (en) * | 2019-03-12 | 2021-12-21 | Nichia Corporation | Method of manufacturing optical member, optical member, and light emitting device |
JP7469592B2 (ja) | 2019-12-05 | 2024-04-17 | 日亜化学工業株式会社 | 発光装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007317956A (ja) * | 2006-05-26 | 2007-12-06 | Nichia Chem Ind Ltd | 発光装置 |
CN103840067A (zh) * | 2013-12-31 | 2014-06-04 | 吴震 | 波长转换装置和发光装置 |
WO2017195620A1 (ja) * | 2016-05-13 | 2017-11-16 | パナソニックIpマネジメント株式会社 | 光源装置及び照明装置 |
JP2017223869A (ja) * | 2016-06-16 | 2017-12-21 | 株式会社小糸製作所 | 波長変換部材、発光装置および波長変換部材の製造方法 |
JP2018087918A (ja) * | 2016-11-29 | 2018-06-07 | セイコーエプソン株式会社 | 光源装置及びプロジェクター |
JP2019053130A (ja) * | 2017-09-13 | 2019-04-04 | 日亜化学工業株式会社 | 光学部品、光学部品を用いた発光装置、及び光学部品の製造方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006072918A1 (en) * | 2005-01-10 | 2006-07-13 | Philips Intellectual Property & Standards Gmbh | Illumination system comprising ceramic luminescence converter |
US8556437B2 (en) * | 2009-12-17 | 2013-10-15 | Stanley Electric Co., Ltd. | Semiconductor light source apparatus and lighting unit |
US9024517B2 (en) * | 2010-03-03 | 2015-05-05 | Cree, Inc. | LED lamp with remote phosphor and diffuser configuration utilizing red emitters |
DE102011084961A1 (de) * | 2011-10-21 | 2013-04-25 | Osram Gmbh | Leuchtstoffrad, Verfahren zum Herstellen eines Leuchtstoffrads und Beleuchtungsanordnung |
DE102011084949B4 (de) * | 2011-10-21 | 2016-03-31 | Osram Gmbh | Konverteranordnung, Verfahren zum Herstellen der Konverteranordnung und Beleuchtungsanordnung |
WO2013175752A1 (ja) * | 2012-05-25 | 2013-11-28 | 日本電気株式会社 | 波長変換部材、光学素子、発光装置、及び投影装置 |
JP2014137973A (ja) * | 2013-01-18 | 2014-07-28 | Stanley Electric Co Ltd | 光源装置 |
DE102014205606A1 (de) * | 2014-03-26 | 2015-10-01 | Osram Gmbh | Beleuchtungsvorrichtung mit Lichtmischelement und Leuchtstoffvolumen |
JP6225976B2 (ja) | 2015-10-30 | 2017-11-08 | 日亜化学工業株式会社 | 発光装置 |
JP2017120864A (ja) | 2015-12-28 | 2017-07-06 | 株式会社タムラ製作所 | 発光装置 |
JP6493308B2 (ja) | 2016-05-31 | 2019-04-03 | 日亜化学工業株式会社 | 発光装置 |
JP6737150B2 (ja) | 2016-11-28 | 2020-08-05 | セイコーエプソン株式会社 | 波長変換素子、光源装置及びプロジェクター |
JP6544408B2 (ja) | 2017-03-03 | 2019-07-17 | 日亜化学工業株式会社 | 光学部品及び光学部品の製造方法 |
DE102017205609A1 (de) * | 2017-04-03 | 2018-10-04 | Osram Gmbh | Beleuchtungsanordnung und Scheinwerfer |
DE102017220918A1 (de) * | 2017-11-23 | 2019-05-23 | Osram Gmbh | Umwandlung von Primärlicht in Sekundärlicht mittels eines Wellenlängenkonverters |
-
2019
- 2019-04-22 JP JP2019081379A patent/JP7111989B2/ja active Active
-
2020
- 2020-04-20 US US16/853,045 patent/US11264544B2/en active Active
- 2020-04-21 CN CN202010315825.8A patent/CN111834515A/zh active Pending
- 2020-04-21 EP EP20170519.1A patent/EP3731286B1/en active Active
-
2022
- 2022-01-21 US US17/581,781 patent/US11469355B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007317956A (ja) * | 2006-05-26 | 2007-12-06 | Nichia Chem Ind Ltd | 発光装置 |
CN103840067A (zh) * | 2013-12-31 | 2014-06-04 | 吴震 | 波长转换装置和发光装置 |
WO2017195620A1 (ja) * | 2016-05-13 | 2017-11-16 | パナソニックIpマネジメント株式会社 | 光源装置及び照明装置 |
JP2017223869A (ja) * | 2016-06-16 | 2017-12-21 | 株式会社小糸製作所 | 波長変換部材、発光装置および波長変換部材の製造方法 |
JP2018087918A (ja) * | 2016-11-29 | 2018-06-07 | セイコーエプソン株式会社 | 光源装置及びプロジェクター |
JP2019053130A (ja) * | 2017-09-13 | 2019-04-04 | 日亜化学工業株式会社 | 光学部品、光学部品を用いた発光装置、及び光学部品の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN111834515A (zh) | 2020-10-27 |
JP7111989B2 (ja) | 2022-08-03 |
EP3731286B1 (en) | 2023-12-06 |
US11469355B2 (en) | 2022-10-11 |
EP3731286A1 (en) | 2020-10-28 |
US20200332984A1 (en) | 2020-10-22 |
US11264544B2 (en) | 2022-03-01 |
US20220149252A1 (en) | 2022-05-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20150077972A1 (en) | Light emitting device | |
US11469355B2 (en) | Wavelength conversion part, method of manufacturing wavelength conversion part, and light emitting device | |
JP2019145690A (ja) | 発光装置及び発光装置の製造方法 | |
JP2022179778A (ja) | 発光装置 | |
US11626706B2 (en) | Method of manufacturing optical member, optical member, and light emitting device | |
US10808903B2 (en) | Light converting device with ceramic protection layer | |
JP6989795B2 (ja) | 光学部材の製造方法、光学部材、発光装置の製造方法、及び、発光装置 | |
US11043789B2 (en) | Light emitting device | |
JP7495628B2 (ja) | 光学部材の製造方法、光学部材、発光装置の製造方法、及び、発光装置 | |
JP7053984B2 (ja) | 光部品の製造方法および発光装置の製造方法、ならびに、光部品および発光装置 | |
US20210384699A1 (en) | Method of manufacturing metal-coated member, metal-coated member, wavelength conversion member, and light emitting device | |
US11719415B2 (en) | Wavelength conversion member, method of manufacturing same, and light-emitting device | |
WO2021251233A1 (ja) | 発光装置 | |
JP7206494B2 (ja) | 発光装置の製造方法、発光装置 | |
US11631965B2 (en) | Light emitting device and optical part | |
JP7495599B2 (ja) | 光学部材、又は、発光装置 | |
JP2020144363A (ja) | 光学部材、又は、発光装置 | |
US20240044475A1 (en) | Light emitting device | |
JP7360054B2 (ja) | 発光装置の製造方法、接合方法、及び、発光装置 | |
JP2022057984A (ja) | 発光部材及びその製造方法、光学部材、発光装置 | |
JP2023047990A (ja) | 光学部材、発光装置 | |
JP7037030B2 (ja) | 発光装置の製造方法 | |
JP2023080739A (ja) | 光学部材及び発光装置 | |
JP2022086988A (ja) | 透光性部材及びその製造方法、光学部材、発光装置 | |
JP2023036165A (ja) | 発光装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20200124 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200713 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20210319 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210330 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210523 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210609 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20211207 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220204 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20220621 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20220704 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 7111989 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |