JP2020176054A - 炭化珪素基板 - Google Patents
炭化珪素基板 Download PDFInfo
- Publication number
- JP2020176054A JP2020176054A JP2020116979A JP2020116979A JP2020176054A JP 2020176054 A JP2020176054 A JP 2020176054A JP 2020116979 A JP2020116979 A JP 2020116979A JP 2020116979 A JP2020116979 A JP 2020116979A JP 2020176054 A JP2020176054 A JP 2020176054A
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- JP
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- Prior art keywords
- silicon carbide
- carbide substrate
- crucible
- less
- powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 89
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 78
- 239000000758 substrate Substances 0.000 title claims abstract description 78
- 239000000969 carrier Substances 0.000 claims abstract description 26
- 238000004458 analytical method Methods 0.000 claims abstract description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 37
- 229910052799 carbon Inorganic materials 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 abstract description 28
- 239000004065 semiconductor Substances 0.000 abstract description 24
- 239000013078 crystal Substances 0.000 description 54
- 230000002093 peripheral effect Effects 0.000 description 21
- 239000002994 raw material Substances 0.000 description 18
- 239000000843 powder Substances 0.000 description 15
- 238000010438 heat treatment Methods 0.000 description 14
- 230000006698 induction Effects 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- 230000007547 defect Effects 0.000 description 7
- 230000005855 radiation Effects 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011812 mixed powder Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000002706 hydrostatic effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
Abstract
Description
最初に本願開示の技術の実施態様を列記して説明する。本願の炭化珪素基板は、多数キャリアの密度が1×1017cm−3以上である炭化珪素基板である。この炭化珪素基板は、μ−PCD分析により得られる、主面の外周からの距離が5mm以内の領域を除いた領域における少数キャリアの寿命の標準偏差が0.7ns以下である。
次に、本願開示の技術にかかる炭化珪素基板の一実施の形態の一例を、以下に図面を参照しつつ説明する。なお、以下の図面において同一または相当する部分には同一の参照番号を付しその説明は繰返さない。
11 周壁部
11A 周壁部結合面
11B 外面
12 底壁部
12A 内面
12B 外面
13 蓋部
13A 蓋部結合面
13B 外面
14 保持部
14A 保持面
21,22,23 断熱部材
22A,23A 貫通孔
22B 接触面
51 種結晶
51A 成長面
52 原料粉末
53 単結晶
71,72 放射温度計
74 誘導加熱コイル
9 炭化珪素基板
91 主面
92 外周領域
93 中央領域
99 測定点
100 単結晶の製造装置
α 中央軸
d ピッチ
S10,S20,S30,S40,S50 工程
Claims (5)
- 多数キャリアの密度が1×1017cm−3以上である炭化珪素基板であって、
μ−PCD分析により得られる、主面の外周からの距離が5mm以内の領域を除いた領域における少数キャリアの寿命の平均値が100ns以下であり、
前記多数キャリアはn型キャリアである、炭化珪素基板。 - 前記少数キャリアの寿命の平均値が50ns以下である、請求項1に記載の炭化珪素基板。
- 直径が100mm以上である、請求項1または請求項2に記載の炭化珪素基板。
- 直径が150mm以上である、請求項1または請求項2に記載の炭化珪素基板。
- カーボンインクルージョンを含まない、請求項1から請求項4のいずれか一項に記載の炭化珪素基板。
Applications Claiming Priority (2)
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JP2015210672 | 2015-10-27 | ||
JP2015210672 | 2015-10-27 |
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JP2016575251A Division JP6737186B2 (ja) | 2015-10-27 | 2016-10-12 | 炭化珪素基板 |
Publications (2)
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JP2020176054A true JP2020176054A (ja) | 2020-10-29 |
JP6879415B2 JP6879415B2 (ja) | 2021-06-02 |
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JP2016575251A Active JP6737186B2 (ja) | 2015-10-27 | 2016-10-12 | 炭化珪素基板 |
JP2020116979A Active JP6879415B2 (ja) | 2015-10-27 | 2020-07-07 | 炭化珪素基板 |
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JP2016575251A Active JP6737186B2 (ja) | 2015-10-27 | 2016-10-12 | 炭化珪素基板 |
Country Status (5)
Country | Link |
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US (1) | US10361273B2 (ja) |
JP (2) | JP6737186B2 (ja) |
CN (1) | CN108026664B (ja) |
DE (1) | DE112016004911T5 (ja) |
WO (1) | WO2017073333A1 (ja) |
Families Citing this family (1)
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WO2023119755A1 (ja) * | 2021-12-20 | 2023-06-29 | 住友電気工業株式会社 | 炭化珪素基板、炭化珪素半導体装置の製造方法および炭化珪素基板の製造方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003086518A (ja) * | 2001-09-10 | 2003-03-20 | Toshiba Corp | 炭化珪素膜のcvd方法、cvd装置及びcvd装置用サセプター |
JP2005508086A (ja) * | 2001-10-26 | 2005-03-24 | クリー インコーポレイテッド | 劣化を最少に抑えたSiCバイポーラ半導体デバイス |
JP2008074661A (ja) * | 2006-09-21 | 2008-04-03 | Nippon Steel Corp | エピタキシャル炭化珪素単結晶基板及びその製造方法 |
JP2008525298A (ja) * | 2004-12-22 | 2008-07-17 | クリー インコーポレイテッド | 増大した少数キャリアライフタイムを有する炭化珪素結晶を製造するプロセス |
JP2009054931A (ja) * | 2007-08-29 | 2009-03-12 | Hitachi Ltd | バイポーラ素子及びその製造方法 |
JP2010189235A (ja) * | 2009-02-19 | 2010-09-02 | Toyota Motor Corp | n型SiC単結晶の製造方法、それによって得られるn型SiC単結晶およびその用途 |
JP2012134513A (ja) * | 2003-10-16 | 2012-07-12 | Cree Inc | ブール成長された炭化ケイ素ドリフト層を使用してパワー半導体デバイスを形成する方法、およびそれによって形成されるパワー半導体デバイス |
WO2015072210A1 (ja) * | 2013-11-13 | 2015-05-21 | 三菱電機株式会社 | 半導体装置の製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000004211A1 (de) * | 1998-07-13 | 2000-01-27 | Siemens Aktiengesellschaft | VERFAHREN ZUR ZÜCHTUNG VON SiC-EINKRISTALLEN |
JP2009256159A (ja) * | 2008-04-14 | 2009-11-05 | Incubation Alliance Inc | 結晶炭化珪素基板の製造方法 |
JP2010095397A (ja) * | 2008-10-15 | 2010-04-30 | Nippon Steel Corp | 炭化珪素単結晶及び炭化珪素単結晶ウェハ |
EP2477944A4 (en) * | 2009-09-15 | 2013-08-28 | Ii Vi Inc | SIC CRYSTAL GROWTH BY SUBLIMATION |
JP2013103848A (ja) * | 2011-11-11 | 2013-05-30 | Mitsubishi Electric Corp | SiC単結晶の製造方法 |
EP2851456A1 (en) * | 2012-04-20 | 2015-03-25 | II-VI Incorporated | Large Diameter, High Quality SiC Single Crystals, Method and Apparatus |
US8860040B2 (en) * | 2012-09-11 | 2014-10-14 | Dow Corning Corporation | High voltage power semiconductor devices on SiC |
US9279192B2 (en) * | 2014-07-29 | 2016-03-08 | Dow Corning Corporation | Method for manufacturing SiC wafer fit for integration with power device manufacturing technology |
CN104805504B (zh) * | 2015-05-19 | 2017-12-05 | 山东大学 | 一种快速生长大尺寸碳化硅单晶的方法 |
-
2016
- 2016-10-12 CN CN201680056320.6A patent/CN108026664B/zh active Active
- 2016-10-12 US US15/758,113 patent/US10361273B2/en active Active
- 2016-10-12 WO PCT/JP2016/080277 patent/WO2017073333A1/ja active Application Filing
- 2016-10-12 DE DE112016004911.0T patent/DE112016004911T5/de active Pending
- 2016-10-12 JP JP2016575251A patent/JP6737186B2/ja active Active
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2020
- 2020-07-07 JP JP2020116979A patent/JP6879415B2/ja active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003086518A (ja) * | 2001-09-10 | 2003-03-20 | Toshiba Corp | 炭化珪素膜のcvd方法、cvd装置及びcvd装置用サセプター |
JP2005508086A (ja) * | 2001-10-26 | 2005-03-24 | クリー インコーポレイテッド | 劣化を最少に抑えたSiCバイポーラ半導体デバイス |
JP2012134513A (ja) * | 2003-10-16 | 2012-07-12 | Cree Inc | ブール成長された炭化ケイ素ドリフト層を使用してパワー半導体デバイスを形成する方法、およびそれによって形成されるパワー半導体デバイス |
JP2008525298A (ja) * | 2004-12-22 | 2008-07-17 | クリー インコーポレイテッド | 増大した少数キャリアライフタイムを有する炭化珪素結晶を製造するプロセス |
JP2008074661A (ja) * | 2006-09-21 | 2008-04-03 | Nippon Steel Corp | エピタキシャル炭化珪素単結晶基板及びその製造方法 |
JP2009054931A (ja) * | 2007-08-29 | 2009-03-12 | Hitachi Ltd | バイポーラ素子及びその製造方法 |
JP2010189235A (ja) * | 2009-02-19 | 2010-09-02 | Toyota Motor Corp | n型SiC単結晶の製造方法、それによって得られるn型SiC単結晶およびその用途 |
WO2015072210A1 (ja) * | 2013-11-13 | 2015-05-21 | 三菱電機株式会社 | 半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20180254324A1 (en) | 2018-09-06 |
CN108026664A (zh) | 2018-05-11 |
CN108026664B (zh) | 2020-11-13 |
JPWO2017073333A1 (ja) | 2018-08-09 |
US10361273B2 (en) | 2019-07-23 |
DE112016004911T5 (de) | 2018-07-12 |
JP6737186B2 (ja) | 2020-08-05 |
WO2017073333A1 (ja) | 2017-05-04 |
JP6879415B2 (ja) | 2021-06-02 |
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