JP2020115587A - キャパシタ - Google Patents
キャパシタ Download PDFInfo
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- JP2020115587A JP2020115587A JP2020076963A JP2020076963A JP2020115587A JP 2020115587 A JP2020115587 A JP 2020115587A JP 2020076963 A JP2020076963 A JP 2020076963A JP 2020076963 A JP2020076963 A JP 2020076963A JP 2020115587 A JP2020115587 A JP 2020115587A
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- 239000003990 capacitor Substances 0.000 title claims abstract description 78
- 239000000758 substrate Substances 0.000 claims abstract description 68
- 230000015572 biosynthetic process Effects 0.000 claims description 18
- 239000010408 film Substances 0.000 description 44
- 239000011241 protective layer Substances 0.000 description 28
- 238000000034 method Methods 0.000 description 16
- 239000000463 material Substances 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- 229910004541 SiN Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 230000007257 malfunction Effects 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910004140 HfO Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- -1 SiO 2 Chemical class 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/008—Selection of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/012—Form of non-self-supporting electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/01—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate
- H01L27/016—Thin-film circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/86—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions
- H01L28/87—Electrodes with an enlarged surface, e.g. formed by texturisation having horizontal extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
- H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
Abstract
Description
図1は、本実施形態に係るキャパシタの構成要素の形成領域を示す平面図である。図2は、本実施形態に係るキャパシタの断面図である。
また、基板を含めたキャパシタ全体の厚さは、10μm以上300μm以下が好ましい。
第2の実施形態以降では第1の実施形態と共通の事柄についての記述を省略し、異なる点についてのみ説明する。特に、同様の構成による同様の作用効果については実施形態毎には逐次言及しない。
第2実施形態では、下部電極3が形成される基板1の領域には、複数のトレンチが形成されており、凹凸構造をなしている。基板1のトレンチを被覆するように、絶縁膜2、下部電極3、誘電体膜4、上部電極5が順に形成されている。
図11は、第3実施形態に係るキャパシタの断面図である。
第3実施形態では、基板1にピラミッド形状のテクスチャ構造が形成されている。これにより、第3実施形態では、基板1のピラミッドの斜面を被覆するように、絶縁膜2、下部電極3、誘電体膜4、上部電極5が順に形成されている。
その後、第1実施形態と同様に図4〜図9に示した工程を経ればよい。
1a,1b…トレンチ
2…絶縁膜
3…下部電極
4…誘電体膜
4a…開口部
5…上部電極
6…保護層
6a,6b…開口部
7…端子電極
7a…第1端子電極
7b…第2端子電極
10,10a…キャパシタ
Claims (5)
- 基板と、
前記基板上に形成された下部電極と、
前記下部電極上に形成された誘電体膜と、
前記誘電体膜上の一部に形成された上部電極と、
前記上部電極に接続する第1端子電極と、
を備え、
前記上部電極及び前記第1端子電極は、前記第1端子電極側からキャパシタを見た平面視において、前記下部電極の形成領域内に形成されている、
キャパシタ。 - 前記下部電極に接続する第2端子電極をさらに備え、
前記第2端子電極は、前記第1端子電極側からキャパシタを見た平面視において、前記下部電極の形成領域内に形成されている、
請求項1に記載のキャパシタ。 - 前記上部電極は、前記第1端子電極側からキャパシタを見た平面視において、前記第1端子電極の形成領域内に形成されている、
請求項1又は2に記載のキャパシタ。 - 前記下部電極が形成される前記基板の領域には、トレンチが形成されている、
請求項1〜3のいずれか一項に記載のキャパシタ。 - 前記下部電極が形成される前記基板の領域には、ピラミッド構造が形成されている、
請求項1〜3のいずれか一項に記載のキャパシタ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016128047 | 2016-06-28 | ||
JP2016128047 | 2016-06-28 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018525004A Division JPWO2018003445A1 (ja) | 2016-06-28 | 2017-06-08 | キャパシタ |
Publications (1)
Publication Number | Publication Date |
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JP2020115587A true JP2020115587A (ja) | 2020-07-30 |
Family
ID=60785215
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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JP2018525004A Pending JPWO2018003445A1 (ja) | 2016-06-28 | 2017-06-08 | キャパシタ |
JP2020076963A Pending JP2020115587A (ja) | 2016-06-28 | 2020-04-23 | キャパシタ |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
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JP2018525004A Pending JPWO2018003445A1 (ja) | 2016-06-28 | 2017-06-08 | キャパシタ |
Country Status (3)
Country | Link |
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US (1) | US11101072B2 (ja) |
JP (2) | JPWO2018003445A1 (ja) |
WO (1) | WO2018003445A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019203054A1 (ja) | 2018-04-18 | 2019-10-24 | 株式会社村田製作所 | キャパシタおよびその製造方法 |
WO2019208221A1 (ja) | 2018-04-27 | 2019-10-31 | 株式会社村田製作所 | キャパシタ集合体 |
JP7178187B2 (ja) * | 2018-06-27 | 2022-11-25 | 太陽誘電株式会社 | トレンチキャパシタ |
JP7318279B2 (ja) * | 2019-04-03 | 2023-08-01 | 株式会社村田製作所 | キャパシタ |
JP7197001B2 (ja) * | 2019-05-13 | 2022-12-27 | 株式会社村田製作所 | キャパシタ |
JPWO2020235175A1 (ja) * | 2019-05-21 | 2020-11-26 | ||
CN114981904A (zh) * | 2020-01-20 | 2022-08-30 | 株式会社村田制作所 | 半导体装置以及电容装置 |
DE112022002407T5 (de) * | 2021-05-03 | 2024-02-15 | KYOCERA AVX Components Corporation | Metalloxidhalbleiter-kondensator und leiterplatte, in der ein solcher eingebettet ist |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58115843A (ja) * | 1981-12-28 | 1983-07-09 | インタ−ナシヨナル ビジネス マシ−ンズ コ−ポレ−シヨン | 薄膜キャパシタ及びその形成方法 |
JPH07115032A (ja) * | 1993-10-19 | 1995-05-02 | Shimada Phys & Chem Ind Co Ltd | 薄膜コンデンサおよび薄膜コンデンサを含む半導体集積回路の製造方法 |
JPH08241830A (ja) * | 1995-03-07 | 1996-09-17 | Sumitomo Metal Ind Ltd | 薄膜コンデンサ |
JP2002280261A (ja) * | 2001-03-16 | 2002-09-27 | Hitachi Ltd | 薄膜コンデンサ及び薄膜電子部品とその製造方法 |
JP2003224033A (ja) * | 2002-01-30 | 2003-08-08 | Kyocera Corp | 薄膜コンデンサ |
JP2004172154A (ja) * | 2002-11-15 | 2004-06-17 | Fujitsu Media Device Kk | 高周波キャパシタ |
JP2007299939A (ja) * | 2006-04-28 | 2007-11-15 | Renesas Technology Corp | 半導体装置 |
JP2008078299A (ja) * | 2006-09-20 | 2008-04-03 | Fujitsu Ltd | キャパシタ、その製造方法、および電子基板 |
JP2008243971A (ja) * | 2007-03-26 | 2008-10-09 | Tdk Corp | 電子部品 |
JP2008251972A (ja) * | 2007-03-30 | 2008-10-16 | Tdk Corp | 薄膜コンデンサ |
WO2008149622A1 (ja) * | 2007-05-30 | 2008-12-11 | Kyocera Corporation | キャパシタ,共振器、フィルタ装置,通信装置、並びに電気回路 |
JP2015192037A (ja) * | 2014-03-28 | 2015-11-02 | 株式会社東芝 | Mimキャパシタ |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0837504A3 (en) * | 1996-08-20 | 1999-01-07 | Ramtron International Corporation | Partially or completely encapsulated ferroelectric device |
US6818469B2 (en) * | 2002-05-27 | 2004-11-16 | Nec Corporation | Thin film capacitor, method for manufacturing the same and printed circuit board incorporating the same |
JP3918675B2 (ja) * | 2002-08-01 | 2007-05-23 | 日本電気株式会社 | 薄膜キャパシタ、それを内蔵した配線基板、それを搭載した半導体集積回路および電子機器システム |
JP3995619B2 (ja) * | 2003-03-12 | 2007-10-24 | 富士通株式会社 | 薄膜キャパシタ素子、その製造方法及び電子装置 |
JP4641396B2 (ja) * | 2004-09-02 | 2011-03-02 | Okiセミコンダクタ株式会社 | 薄膜コンデンサとその製造方法 |
JP4461386B2 (ja) * | 2005-10-31 | 2010-05-12 | Tdk株式会社 | 薄膜デバイスおよびその製造方法 |
US8361811B2 (en) * | 2006-06-28 | 2013-01-29 | Research In Motion Rf, Inc. | Electronic component with reactive barrier and hermetic passivation layer |
JP2009246180A (ja) * | 2008-03-31 | 2009-10-22 | Tdk Corp | 薄膜コンデンサ |
JP2009295925A (ja) * | 2008-06-09 | 2009-12-17 | Tdk Corp | トレンチ型コンデンサ及びその製造方法 |
JP5369519B2 (ja) * | 2008-07-09 | 2013-12-18 | 株式会社村田製作所 | コンデンサ |
JP2010045297A (ja) * | 2008-08-18 | 2010-02-25 | Tdk Corp | トレンチ型コンデンサ及びその製造方法 |
US8680649B2 (en) * | 2008-08-22 | 2014-03-25 | Stmicroelectronics (Tours) Sas | Multi-layer film capacitor with tapered film sidewalls |
JP5455352B2 (ja) | 2008-10-28 | 2014-03-26 | 太陽誘電株式会社 | 薄膜mimキャパシタ及びその製造方法 |
JP5589617B2 (ja) * | 2010-06-30 | 2014-09-17 | Tdk株式会社 | 薄膜コンデンサ及びその製造方法 |
KR101422923B1 (ko) * | 2012-09-28 | 2014-07-23 | 삼성전기주식회사 | 커패시터 및 이의 제조 방법 |
JP6520085B2 (ja) * | 2014-12-05 | 2019-05-29 | Tdk株式会社 | 薄膜キャパシタ |
US10607779B2 (en) * | 2016-04-22 | 2020-03-31 | Rohm Co., Ltd. | Chip capacitor having capacitor region directly below external electrode |
-
2017
- 2017-06-08 WO PCT/JP2017/021240 patent/WO2018003445A1/ja active Application Filing
- 2017-06-08 JP JP2018525004A patent/JPWO2018003445A1/ja active Pending
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2018
- 2018-12-17 US US16/221,789 patent/US11101072B2/en active Active
-
2020
- 2020-04-23 JP JP2020076963A patent/JP2020115587A/ja active Pending
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58115843A (ja) * | 1981-12-28 | 1983-07-09 | インタ−ナシヨナル ビジネス マシ−ンズ コ−ポレ−シヨン | 薄膜キャパシタ及びその形成方法 |
JPH07115032A (ja) * | 1993-10-19 | 1995-05-02 | Shimada Phys & Chem Ind Co Ltd | 薄膜コンデンサおよび薄膜コンデンサを含む半導体集積回路の製造方法 |
JPH08241830A (ja) * | 1995-03-07 | 1996-09-17 | Sumitomo Metal Ind Ltd | 薄膜コンデンサ |
JP2002280261A (ja) * | 2001-03-16 | 2002-09-27 | Hitachi Ltd | 薄膜コンデンサ及び薄膜電子部品とその製造方法 |
JP2003224033A (ja) * | 2002-01-30 | 2003-08-08 | Kyocera Corp | 薄膜コンデンサ |
JP2004172154A (ja) * | 2002-11-15 | 2004-06-17 | Fujitsu Media Device Kk | 高周波キャパシタ |
JP2007299939A (ja) * | 2006-04-28 | 2007-11-15 | Renesas Technology Corp | 半導体装置 |
JP2008078299A (ja) * | 2006-09-20 | 2008-04-03 | Fujitsu Ltd | キャパシタ、その製造方法、および電子基板 |
JP2008243971A (ja) * | 2007-03-26 | 2008-10-09 | Tdk Corp | 電子部品 |
JP2008251972A (ja) * | 2007-03-30 | 2008-10-16 | Tdk Corp | 薄膜コンデンサ |
WO2008149622A1 (ja) * | 2007-05-30 | 2008-12-11 | Kyocera Corporation | キャパシタ,共振器、フィルタ装置,通信装置、並びに電気回路 |
JP2015192037A (ja) * | 2014-03-28 | 2015-11-02 | 株式会社東芝 | Mimキャパシタ |
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WO2018003445A1 (ja) | 2018-01-04 |
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