JP2020047623A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 306
- 239000012535 impurity Substances 0.000 claims abstract description 69
- 229910001385 heavy metal Inorganic materials 0.000 claims description 3
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- 230000015556 catabolic process Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
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- 238000001020 plasma etching Methods 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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Abstract
Description
なお、図面は模式的または概念的なものであり、各部分の厚みと幅との関係、部分間の大きさの比率などは、必ずしも現実のものと同一とは限らない。また、同じ部分を表す場合であっても、図面により互いの寸法や比率が異なって表される場合もある。
また、本願明細書と各図において、既に説明したものと同様の要素には同一の符号を付して詳細な説明は適宜省略する。
以下の説明において、n++、n+、n、n−及びp+、p、p−の表記は、各導電形における不純物濃度の相対的な高低を表す。すなわち、「+」が付されている表記は、「+」及び「−」のいずれも付されていない表記よりも不純物濃度が相対的に高く、「−」が付されている表記は、いずれも付されていない表記よりも不純物濃度が相対的に低いことを示す。これらの表記は、それぞれの領域にp形不純物とn形不純物の両方が含まれている場合には、それらの不純物が補償しあった後の正味の不純物濃度の相対的な高低を表す。
以下で説明する各実施形態について、各半導体領域のp形とn形を反転させて各実施形態を実施してもよい。
図1は、第1実施形態に係る半導体装置を表す斜視断面図である。
図1に表した半導体装置100は、MOSFETである。半導体装置100は、n++形ドレイン領域1、n形ピラー領域2、p形ピラー領域3、n+形バッファ領域4、n−形蓄積領域5、p+形ベース領域6、n++形ソース領域7、ゲート電極10、ドレイン電極21、及びソース電極22を有する。なお、図1では、半導体装置100の上面構造を表すために、ソース電極22の外縁のみを破線で表している。
ソース電極22に対してドレイン電極21に正電圧が印加された状態で、ゲート電極10に閾値以上の電圧を印加する。これにより、p+形ベース領域6のゲート絶縁層11近傍の領域にチャネル(反転層)が形成され、半導体装置100がオン状態となる。電子は、このチャネル及びn形ピラー領域2を通ってソース電極22からドレイン電極21へ流れる。その後、ゲート電極10に印加される電圧が閾値よりも低くなると、p+形ベース領域6におけるチャネルが消滅し、半導体装置100がオフ状態になる。
n++形ドレイン領域1、n形ピラー領域2、p形ピラー領域3、n+形バッファ領域4、n−形蓄積領域5、p+形ベース領域6、及びn++形ソース領域7は、半導体材料として、シリコン、炭化シリコン、窒化ガリウム、またはガリウムヒ素を含む。半導体材料としてシリコンが用いられる場合、n形不純物として、ヒ素、リン、またはアンチモンを用いることができる。p形不純物として、ボロンを用いることができる。
ゲート電極10は、ポリシリコンなどの導電材料を含む。導電材料には、不純物が添加されていても良い。
ゲート絶縁層11は、酸化シリコンなどの絶縁材料を含む。
ドレイン電極21及びソース電極22は、アルミニウムなどの金属を含む。
図2は、第1実施形態に係る半導体装置の製造工程を表す工程断面図である。
上述したように、ソース電極22に正電圧が印加され、その後ドレイン電極21に正電圧が印加されると、半導体装置100にリカバリー電流が流れる。このとき、リカバリー電流の大きさ(電流値)が急激に変化すると、ドレイン電極21の電圧が振動し、ノイズが発生する。ノイズが大きいと、半導体装置100を備えた回路に含まれる他の電子部品の誤作動や故障の原因となる。このため、ノイズは小さいことが望ましい。
図5において、横軸は時間Tを表し、縦軸は電流IFの大きさ(電流値)を表す。また、破線は参考例に係る半導体装置100rの特性を表し、実線は第1実施形態に係る半導体装置100の特性を表す。なお、参考例に係る半導体装置100rでは、n+形バッファ領域4及びn−形蓄積領域5に代えて、n形ピラー領域2と同じ濃度のn形半導体領域が設けられている。参考例に係る半導体装置100rのその他の構造は、半導体装置100と同じとする。
n−形蓄積領域5におけるn形不純物濃度は、n形ピラー領域2におけるn形不純物濃度と同じでも良いが、それよりも低いことが望ましい。こうすることで、空乏層が広がり難いn−形蓄積領域5により多くのキャリアを蓄積させることができ、電流値の変化をさらに小さくできる。
n形ピラー領域2におけるn形不純物濃度は、1.0×1015atom/cm3以上、1.0×1016atom/cm3以下である。
p形ピラー領域3におけるp形不純物濃度は、1.0×1015atom/cm3以上、1.0×1016atom/cm3以下である。
n+形バッファ領域4におけるn形不純物濃度は、2.0×1015atom/cm3以上、2.0×1016atom/cm3以下である。
n−形蓄積領域5におけるn形不純物濃度は、5.0×1014atom/cm3以上、5.0×1015atom/cm3以下である。
図6は、第2実施形態に係る半導体装置を表す斜視断面図である。
図6に表した第2実施形態に係る半導体装置200は、n++形ドレイン領域1とn形ピラー領域2との間にn+形バッファ領域4及びn−形蓄積領域5が設けられていない点で、半導体装置100と異なる。すなわち、半導体装置200では、n++形ドレイン領域1とp形ピラー領域3との間にのみn+形バッファ領域4及びn−形蓄積領域5が設けられている。p形ピラー領域3、n+形バッファ領域4、及びn−形蓄積領域5は、X方向においてn形ピラー領域2と並んでいる。
まず、n++形の半導体基板1aを用意し、半導体基板1aの上にn形半導体層2aをエピタキシャル成長させる。図7(a)に表したように、n形半導体層2aに、Y方向に延びるトレンチTを複数形成する。トレンチTは、底部にn形半導体層2aの一部が残るように形成される。
図8は、第3実施形態に係る半導体装置を表す斜視断面図である。
図8に表した半導体装置300は、半導体装置100に比べて、p形半導体領域8及びp−形半導体領域9をさらに有する。
このように、ドレイン電極21に正電圧が印加された際にその半導体領域が空乏化されれば、n++形ドレイン領域1とp形ピラー領域3との間に部分的にp形の半導体領域が設けられていても良い。
まず、n++形の半導体基板1aを用意する。図9(a)に表したように、半導体基板1aの上にn−形半導体層5aをエピタキシャル成長させる。n−形半導体層5aの上面に選択的にp形不純物をイオン注入し、図9(b)に表したように、複数のp形半導体領域8aを形成する。
また、各半導体領域における不純物濃度については、例えば、SIMS(二次イオン質量分析法)により測定することが可能である。
Claims (7)
- 第1電極と、
前記第1電極の上に設けられ、前記第1電極と電気的に接続された第1導電形の第1半導体領域と、
前記第1半導体領域の一部の上に設けられ、前記第1半導体領域よりも低い第1導電形の不純物濃度を有する第1導電形の第2半導体領域と、
前記第1半導体領域の別の一部の上に設けられ、前記第1電極から前記第1半導体領域に向かう第1方向に垂直な第2方向において前記第2半導体領域の少なくとも一部と並ぶ第2導電形の第3半導体領域と、
前記第1半導体領域と前記第3半導体領域との間の少なくとも一部に設けられ、前記第1半導体領域よりも低く、且つ前記第2半導体領域よりも高い第1導電形の不純物濃度を有する第1導電形の第4半導体領域と、
前記第1半導体領域と前記第4半導体領域との間に設けられ、前記第4半導体領域よりも低い第1導電形の不純物濃度を有する第1導電形の第5半導体領域と、
前記第3半導体領域の上に設けられ、前記第3半導体領域よりも高い第2導電形の不純物濃度を有する第2導電形の第6半導体領域と、
前記第6半導体領域の上に選択的に設けられた第1導電形の第7半導体領域と、
前記第2半導体領域、前記第6半導体領域、及び前記第7半導体領域とゲート絶縁層を介して対向するゲート電極と、
前記第6半導体領域及び前記第7半導体領域の上に設けられ、前記第6半導体領域及び前記第7半導体領域と電気的に接続された第2電極と、
を備えた半導体装置。 - 前記第4半導体領域及び前記第5半導体領域は、さらに前記第1半導体領域と前記第2半導体領域との間に設けられた請求項1記載の半導体装置。
- 前記第4半導体領域及び前記第5半導体領域は、前記第2方向において前記第2半導体領域の一部と並ぶ請求項1記載の半導体装置。
- 前記第5半導体領域中に設けられ、前記第1半導体領域と前記第3半導体領域との間に位置する第2導電形の第8半導体領域と、
前記第3半導体領域と前記第8半導体領域との間に設けられ、前記第3半導体領域及び前記第8半導体領域と接続された第2導電形の第9半導体領域と、
をさらに備え、
前記第8半導体領域における第2導電形の不純物濃度は、前記第4半導体領域における第1導電形の不純物濃度よりも低く、
前記第9半導体領域における第2導電形の不純物濃度は、前記第8半導体領域における第2導電形の不純物濃度よりも低い請求項1〜3のいずれか1つに記載の半導体装置。 - 前記第9半導体領域の前記第2方向における長さは、前記第8半導体領域の前記第2方向における長さよりも短い請求項4記載の半導体装置。
- 前記第5半導体領域における第1導電形の不純物濃度は、前記第2半導体領域における第1導電形の不純物濃度よりも小さい請求項1〜5のいずれか1つに記載の半導体装置。
- 前記第2半導体領域の少なくとも一部及び前記第3半導体領域の少なくとも一部には、重金属が添加又は荷電粒子が照射された請求項1〜6のいずれか1つに記載の半導体装置。
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