JP2020013983A - 高温静電チャック - Google Patents

高温静電チャック Download PDF

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Publication number
JP2020013983A
JP2020013983A JP2019091272A JP2019091272A JP2020013983A JP 2020013983 A JP2020013983 A JP 2020013983A JP 2019091272 A JP2019091272 A JP 2019091272A JP 2019091272 A JP2019091272 A JP 2019091272A JP 2020013983 A JP2020013983 A JP 2020013983A
Authority
JP
Japan
Prior art keywords
dielectric
substrate
substrate support
features
ridge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2019091272A
Other languages
English (en)
Japanese (ja)
Other versions
JP2020013983A5 (https=
Inventor
アブドゥル アジズ カジャ，
Aziz Khaja Abdul
アブドゥル アジズ カジャ，
チュン マー，
Jun Ma
チュン マー，
ヒョンチェ ウ，
Hyung Je Woo
ヒョンチェ ウ，
フェイ ウー，
Fei Wu
フェイ ウー，
チエン リー，
Jian Li
チエン リー，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2020013983A publication Critical patent/JP2020013983A/ja
Publication of JP2020013983A5 publication Critical patent/JP2020013983A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7614—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
JP2019091272A 2018-05-16 2019-05-14 高温静電チャック Pending JP2020013983A (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201862672317P 2018-05-16 2018-05-16
US62/672,317 2018-05-16
US16/381,986 US11133212B2 (en) 2018-05-16 2019-04-11 High temperature electrostatic chuck
US16/381,986 2019-04-11

Publications (2)

Publication Number Publication Date
JP2020013983A true JP2020013983A (ja) 2020-01-23
JP2020013983A5 JP2020013983A5 (https=) 2022-05-24

Family

ID=68533057

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019091272A Pending JP2020013983A (ja) 2018-05-16 2019-05-14 高温静電チャック

Country Status (4)

Country Link
US (1) US11133212B2 (https=)
JP (1) JP2020013983A (https=)
KR (1) KR20190131437A (https=)
CN (1) CN110504205B (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023546411A (ja) * 2020-10-16 2023-11-02 アプライド マテリアルズ インコーポレイテッド 誘電性シーズニング膜を用いた静電チャックのシーズニングシステム及び方法
JP2024519750A (ja) * 2021-05-10 2024-05-21 アプライド マテリアルズ インコーポレイテッド 金属マトリックス複合材料を用いた高温サセプタ

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12603259B2 (en) * 2023-06-13 2026-04-14 Applied Materials, Inc. Resistivity-controlled dielectric materials for substrate supports with improved high temperature chucking
TW202522673A (zh) * 2023-07-21 2025-06-01 美商蘭姆研究公司 具有高密度電漿阻障塗層的靜電卡盤

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0718438A (ja) * 1993-06-17 1995-01-20 Anelva Corp 静電チャック装置
JPH10242255A (ja) * 1997-02-28 1998-09-11 Kyocera Corp 真空吸着装置
JP2001274227A (ja) * 2000-03-27 2001-10-05 Hitachi Chem Co Ltd ウェーハ保持用セラミック部材の製造法
JP2003152062A (ja) * 2001-11-13 2003-05-23 Nihon Ceratec Co Ltd 静電チャック
JP2004022889A (ja) * 2002-06-18 2004-01-22 Anelva Corp 静電吸着装置
JP3129419U (ja) * 2004-10-07 2007-02-22 アプライド　マテリアルズ　インコーポレイテッド 基板の温度を制御する装置
JP2007254164A (ja) * 2006-03-20 2007-10-04 Ngk Insulators Ltd 窒化アルミニウム焼結体、半導体製造装置用部材、及び窒化アルミニウム焼結体の製造方法
JP2008135736A (ja) * 2006-10-31 2008-06-12 Taiheiyo Cement Corp 静電チャック
JP2013115352A (ja) * 2011-11-30 2013-06-10 Shinko Electric Ind Co Ltd 静電チャック及びその製造方法、基板温調固定装置
US20160064264A1 (en) * 2014-08-26 2016-03-03 Applied Materials, Inc. High temperature electrostatic chucking with dielectric constant engineered in-situ charge trap materials
JP2018006559A (ja) * 2016-06-30 2018-01-11 新光電気工業株式会社 静電チャック、および、静電チャックの製造方法
WO2018020956A1 (ja) * 2016-07-25 2018-02-01 京セラ株式会社 試料保持具

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JPH07153825A (ja) * 1993-11-29 1995-06-16 Toto Ltd 静電チャック及びこの静電チャックを用いた被吸着体の処理方法
JPH09172055A (ja) * 1995-12-19 1997-06-30 Fujitsu Ltd 静電チャック及びウエハの吸着方法
JPH09237827A (ja) * 1996-03-01 1997-09-09 Hitachi Ltd 静電吸着装置及びそれを用いた電子ビーム露光装置
US5761023A (en) * 1996-04-25 1998-06-02 Applied Materials, Inc. Substrate support with pressure zones having reduced contact area and temperature feedback
JPH10125769A (ja) * 1996-10-21 1998-05-15 Matsushita Electron Corp 静電チャック電極構造
KR100804006B1 (ko) * 2000-01-28 2008-02-18 히다치 도쿄 에렉트로닉스 가부시키가이샤 웨이퍼 척
KR20040070008A (ko) * 2003-01-29 2004-08-06 쿄세라 코포레이션 정전척
US7138629B2 (en) * 2003-04-22 2006-11-21 Ebara Corporation Testing apparatus using charged particles and device manufacturing method using the testing apparatus
KR100666039B1 (ko) * 2003-12-05 2007-01-10 동경 엘렉트론 주식회사 정전척
KR100804170B1 (ko) * 2006-06-13 2008-02-18 주식회사 아이피에스 웨이퍼블럭
US7723648B2 (en) * 2006-09-25 2010-05-25 Tokyo Electron Limited Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing system
TWI475594B (zh) * 2008-05-19 2015-03-01 恩特格林斯公司 靜電夾頭
WO2014084060A1 (ja) * 2012-11-28 2014-06-05 京セラ株式会社 載置用部材およびその製造方法
KR102247936B1 (ko) * 2013-10-30 2021-05-04 가부시키가이샤 니콘 기판 유지 장치, 노광 장치 및 디바이스 제조 방법
US10418266B2 (en) * 2013-11-22 2019-09-17 Kyocera Corporation Electrostatic chuck
JP6262866B2 (ja) * 2014-01-20 2018-01-17 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィのための支持テーブル、リソグラフィ装置、及びデバイス製造方法
JP6308858B2 (ja) * 2014-04-25 2018-04-11 東京エレクトロン株式会社 静電チャック、載置台、プラズマ処理装置
CN106575634A (zh) * 2014-08-15 2017-04-19 应用材料公司 在等离子体增强化学气相沉积系统中于高温下使用压缩应力或拉伸应力处理晶片的方法和装置
US10068790B2 (en) * 2014-09-30 2018-09-04 Sumitomo Osaka Cement Co., Ltd. Electrostatic chuck device
JP6650345B2 (ja) * 2016-05-26 2020-02-19 日本特殊陶業株式会社 基板保持装置及びその製造方法
US10832936B2 (en) * 2016-07-27 2020-11-10 Lam Research Corporation Substrate support with increasing areal density and corresponding method of fabricating
US20180148835A1 (en) * 2016-11-29 2018-05-31 Lam Research Corporation Substrate support with varying depths of areas between mesas and corresponding temperature dependent method of fabricating
JP7083080B2 (ja) * 2018-01-11 2022-06-10 株式会社日立ハイテク プラズマ処理装置

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0718438A (ja) * 1993-06-17 1995-01-20 Anelva Corp 静電チャック装置
JPH10242255A (ja) * 1997-02-28 1998-09-11 Kyocera Corp 真空吸着装置
JP2001274227A (ja) * 2000-03-27 2001-10-05 Hitachi Chem Co Ltd ウェーハ保持用セラミック部材の製造法
JP2003152062A (ja) * 2001-11-13 2003-05-23 Nihon Ceratec Co Ltd 静電チャック
JP2004022889A (ja) * 2002-06-18 2004-01-22 Anelva Corp 静電吸着装置
JP3129419U (ja) * 2004-10-07 2007-02-22 アプライド　マテリアルズ　インコーポレイテッド 基板の温度を制御する装置
JP2007254164A (ja) * 2006-03-20 2007-10-04 Ngk Insulators Ltd 窒化アルミニウム焼結体、半導体製造装置用部材、及び窒化アルミニウム焼結体の製造方法
JP2008135736A (ja) * 2006-10-31 2008-06-12 Taiheiyo Cement Corp 静電チャック
JP2013115352A (ja) * 2011-11-30 2013-06-10 Shinko Electric Ind Co Ltd 静電チャック及びその製造方法、基板温調固定装置
US20160064264A1 (en) * 2014-08-26 2016-03-03 Applied Materials, Inc. High temperature electrostatic chucking with dielectric constant engineered in-situ charge trap materials
JP2018006559A (ja) * 2016-06-30 2018-01-11 新光電気工業株式会社 静電チャック、および、静電チャックの製造方法
WO2018020956A1 (ja) * 2016-07-25 2018-02-01 京セラ株式会社 試料保持具

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023546411A (ja) * 2020-10-16 2023-11-02 アプライド マテリアルズ インコーポレイテッド 誘電性シーズニング膜を用いた静電チャックのシーズニングシステム及び方法
JP7819184B2 (ja) 2020-10-16 2026-02-24 アプライド マテリアルズ インコーポレイテッド 誘電性シーズニング膜を用いた静電チャックのシーズニングシステム及び方法
JP2024519750A (ja) * 2021-05-10 2024-05-21 アプライド マテリアルズ インコーポレイテッド 金属マトリックス複合材料を用いた高温サセプタ
JP7685617B2 (ja) 2021-05-10 2025-05-29 アプライド マテリアルズ インコーポレイテッド 金属マトリックス複合材料を用いた高温サセプタ

Also Published As

Publication number Publication date
KR20190131437A (ko) 2019-11-26
CN110504205A (zh) 2019-11-26
US11133212B2 (en) 2021-09-28
CN110504205B (zh) 2023-07-21
US20190355608A1 (en) 2019-11-21

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