WO2018020956A1 - 試料保持具 - Google Patents

試料保持具 Download PDF

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Publication number
WO2018020956A1
WO2018020956A1 PCT/JP2017/024133 JP2017024133W WO2018020956A1 WO 2018020956 A1 WO2018020956 A1 WO 2018020956A1 JP 2017024133 W JP2017024133 W JP 2017024133W WO 2018020956 A1 WO2018020956 A1 WO 2018020956A1
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WO
WIPO (PCT)
Prior art keywords
peripheral wall
wall portion
ceramic body
sample
convex portions
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PCT/JP2017/024133
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English (en)
French (fr)
Inventor
賢一 赤羽
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京セラ株式会社
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Publication date
Application filed by 京セラ株式会社 filed Critical 京セラ株式会社
Priority to US16/317,253 priority Critical patent/US11139194B2/en
Priority to JP2018529465A priority patent/JP6612985B2/ja
Priority to KR1020217003689A priority patent/KR102474583B1/ko
Priority to KR1020197001005A priority patent/KR20190017953A/ko
Publication of WO2018020956A1 publication Critical patent/WO2018020956A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

Definitions

  • the present disclosure relates to a sample holder used for holding a sample such as a semiconductor wafer in a manufacturing process of a semiconductor integrated circuit.
  • Patent Document 1 As a sample holder used in a semiconductor manufacturing apparatus or the like, for example, a sample holder described in JP 2010-123843 A (hereinafter also referred to as Patent Document 1) is known.
  • the sample holder described in Patent Literature 1 includes a ceramic body having a sample holding surface on an upper surface and an adsorption electrode provided inside the ceramic body. A plurality of convex portions and a peripheral wall portion provided so as to surround the convex portions are provided on the upper surface of the ceramic body.
  • the sample holder holds the sample on the upper surfaces of the plurality of convex portions.
  • the peripheral wall portion is provided in a ring shape so that the upper surface is in contact with the sample and surrounds the plurality of convex portions.
  • the space inside a surrounding wall part is sealed with the surrounding wall part and the sample.
  • a cooling gas such as helium gas is supplied between the plurality of convex portions inside the peripheral wall portion.
  • the sample can be cooled when heat is generated in the sample.
  • heat for example, a case where the sample is irradiated with plasma can be cited.
  • the outside of the peripheral wall portion is in a vacuum state.
  • the sample holder of the present disclosure includes a disk-shaped ceramic body whose upper surface serves as a sample holding surface for holding a sample, and an adsorption electrode provided on the ceramic body.
  • the corner portion is an R surface, and when viewed from a cut surface obtained by cutting the ceramic body so as to pass through the center in plan view, the radius of curvature of the R surface located inside the first peripheral wall portion is larger than the radius of curvature. The radius of curvature of the R surface located outside is smaller.
  • FIG. 2 is a cross-sectional view of the sample holder shown in FIG. 1 cut along line AA. It is the fragmentary sectional view which expanded the area
  • FIG. 6 is a cross-sectional view of the sample holder shown in FIG. 5 taken along line CC. It is the fragmentary sectional view which expanded the area
  • the sample holder 10 includes a ceramic body 1, an adsorption electrode 2, and a base plate 3.
  • the ceramic body 1 is a disk-shaped member whose upper surface serves as a sample holding surface 4 for holding a sample.
  • the ceramic body 1 holds a sample such as a silicon wafer on the sample holding surface 4.
  • the ceramic body 1 has a ceramic material such as alumina, aluminum nitride, silicon nitride, or yttria.
  • the dimensions of the ceramic body 1 can be set to a diameter of 200 to 500 mm and a thickness of 2 to 15 mm, for example.
  • the sample holder 10 includes the adsorption electrode 2 inside the ceramic body 1.
  • the adsorption electrode 2 is composed of two electrodes. One of the two electrodes is connected to the positive electrode of the power source, and the other is connected to the negative electrode.
  • the two electrodes are each formed in a substantially semicircular shape, and are arranged inside the ceramic body 1 so that the semicircular strings face each other. These two electrodes are combined to form a circular outer shape of the adsorption electrode 2 as a whole.
  • the center of the circular outer shape of the entire suction electrode 2 is set to be the same as the center of the outer shape of the circular ceramic body 1.
  • the adsorption electrode 2 has a metal material such as platinum, tungsten, or molybdenum.
  • the base plate 3 is a member that becomes a base of the ceramic body 1.
  • the base plate 3 is a disk-shaped member, for example.
  • the base plate 3 has a metal material, for example.
  • As the metal material for example, aluminum can be used.
  • the base plate 3 and the ceramic body 1 are bonded via an adhesive layer 5.
  • a first peripheral wall portion 6 and a convex portion 7 located inside the first peripheral wall portion 6 are provided on the upper surface of the ceramic body 1. Further, the ceramic body 1 is provided with a plurality of gas holes 8, and the cooling gas is introduced into the upper surface of the ceramic body 1 through the gas holes 8.
  • the gas hole 8 penetrates the ceramic body 1 and also penetrates the adhesive layer 5 and the base plate 3 located on the lower side of the ceramic body 1.
  • the first peripheral wall portion 6 is provided so as to protrude along the outer periphery on the upper surface of the ceramic body 1.
  • the 1st surrounding wall part 6 can seal the inner side of the 1st surrounding wall part 6 with a sample.
  • the first peripheral wall portion 6 has an annular shape when viewed from above. Specifically, the inner periphery has a circular shape, and the outer periphery has a circular shape.
  • the first peripheral wall portion 6 has a quadrangular shape when viewed in cross-section, and a corner portion between the upper surface and the side surface is an R surface. More specifically, the corner between the upper surface and the inner peripheral surface and the corner between the upper surface and the outer peripheral surface are R surfaces.
  • the plurality of convex portions 7 are provided inside the first peripheral wall portion 6.
  • the plurality of convex portions 7 are provided to hold the sample.
  • the plurality of convex portions 7 protrude in a direction perpendicular to the upper surface.
  • the plurality of convex portions 7 are provided distributed throughout the inside of the first peripheral wall portion 6.
  • the plurality of convex portions 7 are, for example, columnar members.
  • the plurality of convex portions 7 have a quadrangular shape when viewed in cross-section, and a corner portion between the upper surface and the side surface is an R surface.
  • the dimensions of the plurality of convex portions 7 can be set, for example, to a diameter of 0.5 to 1.5 mm and a height of 5 to 15 ⁇ m.
  • the plurality of convex portions 7 and the first peripheral wall portion 6 can be formed by the following method, for example. Specifically, a blasting process is performed after a blast mask is pasted or formed on the upper surface of the ceramic body 1. Thereby, the convex part used as the some convex part 7 and the 1st surrounding wall part 6 can be formed in an upper surface. And a corner
  • the curvature radius R1 of the R surface located outside the curvature radius R2 of the R surface located inside the first seal portion. Is smaller.
  • the radius of curvature at the corner between the upper surface and the outer peripheral surface is smaller than the radius of curvature at the corner between the upper surface and the inner peripheral surface.
  • This cut surface is a surface cut through the center of the ceramic body 1 when the ceramic body 1 is viewed in plan.
  • the cooling gas can be positioned at a part between the first peripheral wall portion 6 and the sample by increasing the radius of curvature of the R surface located inside.
  • the space (portion that becomes a vacuum) generated between the first peripheral wall portion 6 and the sample can be reduced.
  • the dimensions of the first peripheral wall 6 can be set, for example, such that the inner diameter is 240 to 260 mm, the outer diameter is 290 to 310 mm, and the thickness is 6 to 15 ⁇ m.
  • the radius of curvature at the corner between the upper surface and the inner peripheral surface of the first peripheral wall 6 is, for example, 3 to 15 ⁇ m, and the radius of curvature at the corner between the upper surface and the outer peripheral surface is, for example, 2 to 5 ⁇ m. Can be set.
  • the height of the plurality of convex portions 7 may be lower than the height of the first peripheral wall portion 6.
  • the “length” indicates a length in a direction perpendicular to the upper surface of the ceramic body 1.
  • the height of the plurality of convex portions 7 can be made about 2 to 5 ⁇ m lower than the height of the first peripheral wall portion 6, for example.
  • the height of the plurality of convex portions 7 is the first peripheral wall portion by the following method. It can be confirmed that the height is lower than 6. Specifically, as shown in FIG. 4, the upper surface of the first peripheral wall portion 6 only needs to be positioned below the virtual plane P including the upper surface of the first peripheral wall portion 6.
  • the upper surface of the ceramic body 1 may have an annular second peripheral wall portion 9 that is provided inwardly of the first peripheral wall portion 6.
  • the inside and the outside of the second peripheral wall portion 9 can be separated, so that the flow rate of the cooling gas can be changed between the inside and the outside of the second peripheral wall portion 9. it can. Therefore, temperature control with higher accuracy can be performed, so that the heat uniformity of the sample can be improved.
  • the corner between the upper surface and the side surface of the second peripheral wall portion 9 is an R surface and is located outside the first peripheral wall portion 6.
  • the curvature radius R3 of the R surface of the second peripheral wall 9 may be larger than the curvature radius R1 of the R surface.
  • the radius of curvature of the R surface of the second peripheral wall 9 can be set to 5 to 10 ⁇ m, for example.
  • the second peripheral wall portion 9 has two R surfaces on the outer peripheral side and the inner peripheral side. When the curvature radius R3 of the R surface of the second peripheral wall portion 9 is obtained, either of the two R surfaces on the outer peripheral side and the inner peripheral side of the second peripheral wall portion 9 may be measured.
  • the corner between the upper surface and the side surface of the plurality of convex portions 7 is an R surface, which is larger than the radius of curvature R1 of the R surface located outside the first peripheral wall portion 6.
  • the curvature radius R4 of the R surface of the plurality of convex portions 7 may be larger.
  • the surface roughness of the upper surfaces of the plurality of convex portions 7 may be larger than the surface roughness of the upper surface of the first peripheral wall portion 6. Thereby, the sample can be easily detached from the plurality of convex portions 7 after the sample is adsorbed while the first peripheral wall portion 6 is sealed.
  • the surface roughness of the upper surface of the convex portion 7 can be set to Ra 0.15 to 0.25 ⁇ m, for example.
  • the surface roughness of the upper surface of the first peripheral wall 6 can be set to Ra 0.05 to 0.15 ⁇ m, for example.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

試料保持具は、上面が試料を保持する試料保持面となる円板状のセラミック体と、該セラミック体の内部に設けられた吸着電極とを備え、前記セラミック体の上面には、外周に沿って突出して設けられた環状の第１の周壁部と該第１の周壁部の内側に設けられた複数の凸部とを有し、前記第１の周壁部の上面と側面との間の角部がＲ面になっており、前記セラミック体を平面視による中心を通るように切断した切断面で見たときに、前記第１の周壁部における内側に位置するＲ面の曲率半径よりも外側に位置するＲ面の曲率半径のほうが小さい。

Description

試料保持具
　本開示は、半導体集積回路の製造工程等で半導体ウエハ等の試料を保持するために用いられる試料保持具に関するものである。
　半導体製造装置等に用いられる試料保持具として、例えば、特開２０１０－１２３８４３号公報（以下、特許文献１ともいう）に記載の試料保持具が知られている。特許文献１に記載の試料保持具は、上面に試料保持面を有するセラミック体と、セラミック体の内部に設けられた吸着電極とを備えている。セラミック体の上面には複数の凸部および凸部を囲むように設けられた周壁部が設けられている。試料保持具は、複数の凸部の上面において試料を保持する。周壁部は、上面が試料に接触するとともに、複数の凸部を取り囲むようにリング状に設けられている。これにより、周壁部と試料とによって周壁部の内側の空間を封止している。周壁部の内側であって、複数の凸部の間にはヘリウムガス等の冷却用のガスが供給される。これにより、試料に熱が生じたときに、試料を冷却することができる。試料に熱が生じる例としては、例えば、プラズマが試料に照射される場合が挙げられる。また、試料保持具は、一般的に真空環境下で用いられることから、周壁部の外側は真空状態になっている。
　本開示の試料保持具は、上面が試料を保持する試料保持面となる円板状のセラミック体と、該セラミック体に設けられた吸着電極とを備え、前記セラミック体の上面には、外周に沿って突出して設けられた環状の第１の周壁部と該第１の周壁部の内側に設けられた複数の凸部とを有し、前記第１の周壁部の上面と側面との間の角部がＲ面になっており、前記セラミック体を平面視による中心を通るように切断した切断面で見たときに、前記第１の周壁部における内側に位置するＲ面の曲率半径よりも外側に位置するＲ面の曲率半径のほうが小さい。
試料保持具を示す上面図である。 図１に示した試料保持具をＡ－Ａ線で切った断面図である。 図２に示した試料保持具のうち領域Ｂを拡大した部分断面図である。 別の試料保持具を示す断面図である。 別の試料保持具を示す上面図である。 図５に示した試料保持具をＣ－Ｃ線で切った断面図である。 図６に示した試料保持具のうち領域Ｄを拡大した部分断面図である。
　以下、試料保持具１０について、図面を参照して説明する。
　図１、２に示すように、試料保持具１０は、セラミック体１と、吸着電極２と、ベースプレート３とを備えている。
　セラミック体１は、上面が試料を保持する試料保持面４となる円板状の部材である。セラミック体１は、試料保持面４において、例えば、シリコンウエハ等の試料を保持する。セラミック体１は、例えばアルミナ、窒化アルミニウム、窒化ケイ素またはイットリア等のセラミック材料を有している。セラミック体１の寸法は、例えば、径を２００～５００ｍｍ、厚みを２～１５ｍｍに設定できる。
　セラミック体１を用いて試料を保持する方法としては様々な方法を用いることができるが、本例の試料保持具１０は静電気力によって試料を保持する。そのため、試料保持具１０はセラミック体１の内部に吸着電極２を備えている。吸着電極２は、２つの電極から構成される。２つの電極は、一方が電源の正極に接続され、他方が負極に接続される。２つの電極は、それぞれ略半円板状に形成され、半円の弦同士が対向するように、セラミック体１の内部に配置される。それら２つの電極が合わさって、吸着電極２全体の外形が円形状となっている。この吸着電極２全体による円形状の外形の中心は、同じく円形状のセラミック体１の外形の中心と同一に設定される。吸着電極２は、例えば白金、タングステンまたはモリブデン等の金属材料を有している。
　ベースプレート３は、セラミック体１の土台となる部材である。ベースプレート３は、例えば、円板状の部材である。ベースプレート３は、例えば、金属材料を有している。金属材料としては、例えば、アルミニウムを用いることができる。ベースプレート３とセラミック体１とは、例えば、接着層５を介して接合される。接着層５としては、例えば、シリコーン接着剤を用いることができる。
　セラミック体１の上面には、第１の周壁部６と、第１の周壁部６の内側に位置する凸部７とが設けられている。また、セラミック体１には、複数のガス孔８が設けられており、このガス孔８を通じて冷却ガスがセラミック体１の上面に導入される。ガス孔８は、セラミック体１を貫通するとともに、セラミック体１の下側に位置する接着層５およびベースプレート３も貫通している。
　第１の周壁部６は、セラミック体１の上面において外周に沿って突出して設けられている。第１の周壁部６は、試料とともに、第１の周壁部６の内側を封止することができる。第１の周壁部６は、上面視したときの形状が環状である。具体的には、内周の形状が円形状であって、外周の形状が円形状である。第１の周壁部６は、断面視したときの形状が、四角形状であって、上面と側面との間の角部がＲ面になっている。より具体的には、上面と内周面との間の角部および上面と外周面との間の角部がＲ面になっている。これにより、第１の周壁部６の上面に接触するように試料を保持したときに、第１の周壁部６の角部と試料とが接触して第１の周壁部６の角部に欠け等が生じるおそれを低減できる。
　複数の凸部７は、第１の周壁部６の内側に設けられている。複数の凸部７は、試料を保持するために設けられている。複数の凸部７は、上面に対して垂直な方向に突出している。複数の凸部７は、第１の周壁部６の内側の全体にわたって分散して設けられている。複数の凸部７は、例えば、円柱状の部材である。複数の凸部７は、断面視したときの形状が、四角形状であって上面と側面との間の角部がＲ面である。複数の凸部７の寸法は、例えば、直径を０．５～１．５ｍｍに、高さを５～１５μｍに設定できる。
　複数の凸部７および第１の周壁部６は、例えば、以下の方法で形成することができる。具体的には、セラミック体１の上面に対してブラストマスクを貼付または形成した後にブラスト加工を施す。これにより、複数の凸部７および第１の周壁部６となる凸状部を上面に形成することができる。そして、これらの凸状部に対してラップ機またはブラシ研磨機による加工を行なうことによって、角部をＲ面に加工する。以上のようにして、複数の凸部７および第１の周壁部６を形成できる。
　図３に示すように、試料保持具１０においては、切断面を見たときに、第１のシール部における内側に位置するＲ面の曲率半径Ｒ２よりも外側に位置するＲ面の曲率半径Ｒ１のほうが小さい。言い換えると、上面と内周面との間の角部における曲率半径よりも、上面と外周面との間の角部における曲率半径のほうが小さい。この切断面は、セラミック体１を平面視したときのセラミック体１の中心を通るように切断した面である。これにより、試料の均熱性を向上させることができる。具体的には、内側に位置するＲ面の曲率半径を大きくすることによって、第１の周壁部６と試料との間の一部に冷却ガスを位置させることができる。また、外側に位置するＲ面の曲率半径を小さくすることによって、第１の周壁部６と試料との間に生じてしまう空間（真空になる部分）を小さくすることができる。
　第１の周壁部６の寸法は、例えば、内周の直径を２４０～２６０ｍｍに、外周の直径を２９０～３１０ｍｍに、厚みを６～１５μｍに設定できる。第１の周壁部６の上面と内周面との間の角部における曲率半径は、例えば、３～１５μｍに、上面と外周面との間の角部における曲率半径は、例えば、２～５μｍに設定できる。
　また、図４に示すように、複数の凸部７の高さが第１の周壁部６の高さよりも低くなっていてもよい。これにより、吸着電極２による吸着によって試料の中心が下方向に撓んだときに、試料を第１の周壁部６および複数の凸部７の複数点で支持することができる。これにより、試料保持具１０および試料の特定の部位に力が集中してしまうことによって、セラミック体１または試料の表面の粒子の脱粒を低減することができる。なお、ここでいう「凸部７の高さ」とは、セラミック体１の上面のうち第１の周壁部６の内側に位置する領域であって複数の凸部７および第１の周壁部６が設けられていない領域から凸部７の頂部までの長さを示している。なお、ここでいう「長さ」とは、セラミック体１の上面に対して垂直な方向の長さを示している。このとき、複数の凸部７の高さは、例えば、第１の周壁部６の高さよりも２～５μｍ程度低くすることができる。
　なお、複数の凸部７の高さと第１の周壁部６の高さとを測定することが困難な場合には、例えば、以下の方法で複数の凸部７の高さが第１の周壁部６の高さよりも低くなっていることを確認できる。具体的には、図４に示すように、第１の周壁部６の上面を含む仮想平面Ｐよりも第１の周壁部６の上面が下側に位置していればよい。
　また、図５、６に示すようにセラミック体１の上面には、第１の周壁部６よりも内側に離して設けられた環状の第２の周壁部９を有していてもよい。第２の周壁部９を設けることによって、第２の周壁部９の内側と外側とを区分けすることができるので、第２の周壁部９の内側と外側とで冷却ガスの流量を変えることができる。そのため、より精度の高い温度管理を行なうことができるので、試料の均熱性を向上できる。
　そして、図７に示すように、断面視したときに、第２の周壁部９の上面と側面との間の角部がＲ面になっており、第１の周壁部６の外側に位置するＲ面の曲率半径Ｒ１よりも第２の周壁部９のＲ面の曲率半径Ｒ３のほうが大きくてもよい。これにより、冷却ガスが第２のシール部と試料との間にまで供給されることになるため、均熱性をさらに向上できる。第２の周壁部９のＲ面の曲率半径は、例えば、５～１０μｍに設定できる。なお、図７においては、第２の周壁部９は外周側と内周側とに２つのＲ面を有している。第２の周壁部９のＲ面の曲率半径Ｒ３を求めるときは、第２の周壁部９における外周側と内周側の２つのＲ面のうちどちらのＲ面を測定してもよい。
　また、断面視したときに、複数の凸部７の上面と側面との間の角部がＲ面になっており、第１の周壁部６の外側に位置するＲ面の曲率半径Ｒ１よりも複数の凸部７のＲ面の曲率半径Ｒ４のほうが大きくてもよい。これにより、凸部７の上面と試料との間に冷却ガスが供給されることになるため、均熱性をさらに向上できる。なお、図７においては、凸部７は外周側と内周側とに２つのＲ面を有している。凸部７のＲ面の曲率半径Ｒ４を求めるときは、凸部７における外周側と内周側の２つのＲ面のうちどちらのＲ面を測定してもよい。
また、第１の周壁部６の上面の表面粗さよりも複数の凸部７の上面の表面粗さのほうが大きくてもよい。これにより、第１の周壁部６において封止を行ないつつも、試料を吸着した後の複数の凸部７からの試料の離脱を容易に行なうことができる。凸部７の上面の表面粗さは、例えば、Ｒａ０．１５～０．２５μｍに設定できる。第１の周壁部６の上面の表面粗さは、例えば、Ｒａ０．０５～０．１５μｍに設定できる。
１：セラミック体
２：吸着電極
３：ベースプレート
４：試料保持面
５：接着層
６：第１の周壁部
７：凸部
８：ガス孔
９：第２の周壁部
１０：試料保持具

Claims (5)

  1. 　上面が試料を保持する試料保持面となる円板状のセラミック体と、該セラミック体の内部に設けられた吸着電極とを備え、
    前記セラミック体の上面には、外周に沿って突出して設けられた環状の第１の周壁部と該第１の周壁部の内側に設けられた複数の凸部とを有し、前記第１の周壁部の上面と側面との間の角部がＲ面になっており、
    前記セラミック体を平面視による中心を通るように切断した切断面で見たときに、前記第１の周壁部における内側に位置するＲ面の曲率半径よりも外側に位置するＲ面の曲率半径のほうが小さい試料保持具。
  2. 　前記複数の凸部の高さが前記第１の周壁部の高さよりも低くなっている請求項１に記載の試料保持具。
  3. 　前記セラミック体の上面には、前記第１の周壁部よりも内側に離して設けられた環状の第２の周壁部を有し、該第２の周壁部の上面と側面との間の角部がＲ面になっており、前記第１の周壁部の外側に位置するＲ面の曲率半径よりも前記第２の周壁部のＲ面の曲率半径のほうが大きい請求項１または請求項２に記載の試料保持具。
  4. 　前記複数の凸部の上面と側面との間の角部がＲ面になっており、前記第１の周壁部の外側に位置するＲ面の曲率半径よりも前記複数の凸部のＲ面の曲率半径のほうが大きい請求項１乃至請求項３のうちのいずれかに記載の試料保持具。
  5. 　前記第１の周壁部の上面の表面粗さよりも前記複数の凸部の上面の表面粗さのほうが大きい請求項１乃至請求項４のうちのいずれかに記載の試料保持具。
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