CN110504205B - 高温静电吸盘 - Google Patents

高温静电吸盘 Download PDF

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Publication number
CN110504205B
CN110504205B CN201910401989.XA CN201910401989A CN110504205B CN 110504205 B CN110504205 B CN 110504205B CN 201910401989 A CN201910401989 A CN 201910401989A CN 110504205 B CN110504205 B CN 110504205B
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CN
China
Prior art keywords
substrate
dielectric body
substrate support
features
chucking surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201910401989.XA
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English (en)
Chinese (zh)
Other versions
CN110504205A (zh
Inventor
A·A·哈贾
J·马
H·J·于
F·吴
J·李
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Applied Materials Inc
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Applied Materials Inc
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Publication of CN110504205A publication Critical patent/CN110504205A/zh
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7614—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
CN201910401989.XA 2018-05-16 2019-05-15 高温静电吸盘 Active CN110504205B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201862672317P 2018-05-16 2018-05-16
US62/672,317 2018-05-16
US16/381,986 US11133212B2 (en) 2018-05-16 2019-04-11 High temperature electrostatic chuck
US16/381,986 2019-04-11

Publications (2)

Publication Number Publication Date
CN110504205A CN110504205A (zh) 2019-11-26
CN110504205B true CN110504205B (zh) 2023-07-21

Family

ID=68533057

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910401989.XA Active CN110504205B (zh) 2018-05-16 2019-05-15 高温静电吸盘

Country Status (4)

Country Link
US (1) US11133212B2 (https=)
JP (1) JP2020013983A (https=)
KR (1) KR20190131437A (https=)
CN (1) CN110504205B (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11646216B2 (en) 2020-10-16 2023-05-09 Applied Materials, Inc. Systems and methods of seasoning electrostatic chucks with dielectric seasoning films
JP7685617B2 (ja) * 2021-05-10 2025-05-29 アプライド マテリアルズ インコーポレイテッド 金属マトリックス複合材料を用いた高温サセプタ
US12603259B2 (en) * 2023-06-13 2026-04-14 Applied Materials, Inc. Resistivity-controlled dielectric materials for substrate supports with improved high temperature chucking
TW202522673A (zh) * 2023-07-21 2025-06-01 美商蘭姆研究公司 具有高密度電漿阻障塗層的靜電卡盤

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0718438A (ja) * 1993-06-17 1995-01-20 Anelva Corp 静電チャック装置
JPH09237827A (ja) * 1996-03-01 1997-09-09 Hitachi Ltd 静電吸着装置及びそれを用いた電子ビーム露光装置
JPH10125769A (ja) * 1996-10-21 1998-05-15 Matsushita Electron Corp 静電チャック電極構造
CN1624892A (zh) * 2003-12-05 2005-06-08 东京毅力科创株式会社 静电吸盘
WO2008039611A2 (en) * 2006-09-25 2008-04-03 Tokyo Electron Limited Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing system
JP2017212374A (ja) * 2016-05-26 2017-11-30 日本特殊陶業株式会社 基板保持装置及びその製造方法
CN107665801A (zh) * 2016-07-27 2018-02-06 朗姆研究公司 具有增大面密度的衬底支撑件及其相应制造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07153825A (ja) * 1993-11-29 1995-06-16 Toto Ltd 静電チャック及びこの静電チャックを用いた被吸着体の処理方法
JPH09172055A (ja) * 1995-12-19 1997-06-30 Fujitsu Ltd 静電チャック及びウエハの吸着方法
US5761023A (en) * 1996-04-25 1998-06-02 Applied Materials, Inc. Substrate support with pressure zones having reduced contact area and temperature feedback
JPH10242255A (ja) * 1997-02-28 1998-09-11 Kyocera Corp 真空吸着装置
KR100804006B1 (ko) * 2000-01-28 2008-02-18 히다치 도쿄 에렉트로닉스 가부시키가이샤 웨이퍼 척
JP2001274227A (ja) * 2000-03-27 2001-10-05 Hitachi Chem Co Ltd ウェーハ保持用セラミック部材の製造法
JP4043219B2 (ja) * 2001-11-13 2008-02-06 株式会社日本セラテック 静電チャック
JP4061131B2 (ja) * 2002-06-18 2008-03-12 キヤノンアネルバ株式会社 静電吸着装置
KR20040070008A (ko) * 2003-01-29 2004-08-06 쿄세라 코포레이션 정전척
US7138629B2 (en) * 2003-04-22 2006-11-21 Ebara Corporation Testing apparatus using charged particles and device manufacturing method using the testing apparatus
US7544251B2 (en) * 2004-10-07 2009-06-09 Applied Materials, Inc. Method and apparatus for controlling temperature of a substrate
JP4740002B2 (ja) * 2006-03-20 2011-08-03 日本碍子株式会社 窒化アルミニウム焼結体、半導体製造装置用部材、及び窒化アルミニウム焼結体の製造方法
KR100804170B1 (ko) * 2006-06-13 2008-02-18 주식회사 아이피에스 웨이퍼블럭
JP4890421B2 (ja) * 2006-10-31 2012-03-07 太平洋セメント株式会社 静電チャック
TWI475594B (zh) * 2008-05-19 2015-03-01 恩特格林斯公司 靜電夾頭
JP5785862B2 (ja) * 2011-11-30 2015-09-30 新光電気工業株式会社 静電チャック及びその製造方法、基板温調固定装置
WO2014084060A1 (ja) * 2012-11-28 2014-06-05 京セラ株式会社 載置用部材およびその製造方法
KR102247936B1 (ko) * 2013-10-30 2021-05-04 가부시키가이샤 니콘 기판 유지 장치, 노광 장치 및 디바이스 제조 방법
US10418266B2 (en) * 2013-11-22 2019-09-17 Kyocera Corporation Electrostatic chuck
JP6262866B2 (ja) * 2014-01-20 2018-01-17 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィのための支持テーブル、リソグラフィ装置、及びデバイス製造方法
JP6308858B2 (ja) * 2014-04-25 2018-04-11 東京エレクトロン株式会社 静電チャック、載置台、プラズマ処理装置
CN106575634A (zh) * 2014-08-15 2017-04-19 应用材料公司 在等离子体增强化学气相沉积系统中于高温下使用压缩应力或拉伸应力处理晶片的方法和装置
US10325800B2 (en) * 2014-08-26 2019-06-18 Applied Materials, Inc. High temperature electrostatic chucking with dielectric constant engineered in-situ charge trap materials
US10068790B2 (en) * 2014-09-30 2018-09-04 Sumitomo Osaka Cement Co., Ltd. Electrostatic chuck device
JP6703907B2 (ja) * 2016-06-30 2020-06-03 新光電気工業株式会社 静電チャック、および、静電チャックの製造方法
KR20190017953A (ko) * 2016-07-25 2019-02-20 쿄세라 코포레이션 시료 유지구
US20180148835A1 (en) * 2016-11-29 2018-05-31 Lam Research Corporation Substrate support with varying depths of areas between mesas and corresponding temperature dependent method of fabricating
JP7083080B2 (ja) * 2018-01-11 2022-06-10 株式会社日立ハイテク プラズマ処理装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0718438A (ja) * 1993-06-17 1995-01-20 Anelva Corp 静電チャック装置
JPH09237827A (ja) * 1996-03-01 1997-09-09 Hitachi Ltd 静電吸着装置及びそれを用いた電子ビーム露光装置
JPH10125769A (ja) * 1996-10-21 1998-05-15 Matsushita Electron Corp 静電チャック電極構造
CN1624892A (zh) * 2003-12-05 2005-06-08 东京毅力科创株式会社 静电吸盘
WO2008039611A2 (en) * 2006-09-25 2008-04-03 Tokyo Electron Limited Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing system
JP2017212374A (ja) * 2016-05-26 2017-11-30 日本特殊陶業株式会社 基板保持装置及びその製造方法
CN107665801A (zh) * 2016-07-27 2018-02-06 朗姆研究公司 具有增大面密度的衬底支撑件及其相应制造方法

Also Published As

Publication number Publication date
KR20190131437A (ko) 2019-11-26
CN110504205A (zh) 2019-11-26
US11133212B2 (en) 2021-09-28
JP2020013983A (ja) 2020-01-23
US20190355608A1 (en) 2019-11-21

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