CN110504205B - 高温静电吸盘 - Google Patents

高温静电吸盘 Download PDF

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CN110504205B
CN110504205B CN201910401989.XA CN201910401989A CN110504205B CN 110504205 B CN110504205 B CN 110504205B CN 201910401989 A CN201910401989 A CN 201910401989A CN 110504205 B CN110504205 B CN 110504205B
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A·A·哈贾
J·马
H·J·于
F·吴
J·李
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Abstract

本发明涉及高温静电吸盘，公开一种基板支撑件。所述基板支撑件具有介电主体，所述介电主体上形成有多个特征。壁架围绕所述多个特征的周边包围所述多个特征。所述特征在数量上从所述基板支撑件的中心区域朝向壁架增加。调配层任选地设置在所述介电主体上。

Description

高温静电吸盘
技术领域
本公开内容的实施方式总的来说涉及用于半导体处理的基板支撑件。
背景技术
诸如半导体器件之类的器件几何尺寸继续缩小并且复杂性增加。随着这种器件几何形状发展，对于用于执行制造工艺的方法和部件的要求也在提高。这种部件的一个示例是用于半导体处理中的静电吸盘。如今的半导体器件由在更高的处理温度下形成的越来越多的层以及增加的层厚度制成。增加的层和处理温度通常造成基板弯曲(即，基板跨其直径挠曲)。在一些情况下，基板可以具有多达1毫米(mm)或更多的挠曲。常规的静电吸盘不能充分地卡紧基板的增加的挠曲，这是因为例如因高的卡紧电压而不能提供足够强的卡紧力或电弧。另外，新的处理技术要求在静电吸盘的寿命期间施加更一致的卡紧力。因此，需要改进的静电吸盘装置。
发明内容
本公开内容总的来说涉及用于半导体处理的基板支撑件。
在一个实施方式中，一种基板支撑件具有耦接到介电主体的温度控制基部。介电主体上具有基板卡紧表面，基板卡紧表面部分地由形成在介电主体的周边上的壁架限定。电极设置在介电主体内。多个特征形成在壁架的径向内侧。特征的数量从基板卡紧表面的中心到壁架径向地增加。
在另一个实施方式中，一种基板支撑件具有介电主体。介电主体上具有基板卡紧表面，基板卡紧表面部分地由形成在介电主体的周边上的壁架限定。电极设置在介电主体内。多个特征形成在壁架的径向内侧。特征的数量从基板卡紧表面的中心到壁架径向地增加。调配层形成在介电主体上，调配层耐受因暴露于处理化学物质下而造成的降解。
在又一个实施方式中，一种基板支撑件具有介电主体，介电主体上具有基板卡紧表面。基板卡紧表面部分地由形成在介电主体的周边上的壁架限定。电极设置在介电主体内。多个特征形成在基板卡紧表面上，其中多个特征的在基板卡紧表面的周边处的分布比在其中心区域处更大。介电主体具有相对于基板支撑件的操作温度选择的电阻率。
附图简述
为了能够详细地理解本公开内容的上述特征的方式，可以通过参考实施方式获得上面简要地概述的本公开内容的更具体的描述，其中一些实施方式在附图中示出。然而，应注意，附图仅示出了示例性实施方式，并且因此不应被视为限制其范围，因为本公开内容可允许其它同等有效的实施方式。
图1是根据本公开内容的实施方式的处理腔室的示意性布置。
图2是根据本公开内容的实施方式的示例性基板支撑件的横截面。
图3是图2的基板支撑件的自顶向下视图。
图4是根据本公开内容的实施方式的示出调配层的基板支撑件的一部分的放大图。
图5A示出了在等离子体处理腔室中执行的等离子体工艺期间流过基板支撑件的未经调配的介电主体的测量到的泄漏电流和介电主体的测量到的电阻R随时间变化的实验结果的示例。
图5B示出了在等离子体处理腔室中执行的等离子体工艺期间流过基板支撑件的经调配的介电主体的测量到的泄漏电流和介电主体的测量到的电阻R随时间变化的实验结果的示例。
为了促进理解，已经尽可能地使用相同的附图标记来标示在附图中共有的相同元件。预期的是，一个实施方式的元件和特征可以有利地并入其它实施方式，而无需进一步叙述。
具体实施方式
本公开内容涉及用于半导体制造的基板支撑件。基板支撑件具有介电主体，所述介电主体上形成有多个特征。壁架围绕多个特征的周边包围多个特征。特征在数量上从基板支撑件的中心区域朝向壁架增加，以提供朝向壁架的增加的卡紧力。调配层任选地设置在介电主体上，以提供对因暴露于处理化学物质下而造成的降解的耐受性。
图1是在其中具有基板支撑件140的示例性处理腔室100。处理腔室100包括腔室主体104，腔室主体104与连接到腔室主体104的盖102限定处理容积112。可以穿过盖102形成工艺气体入口114，以用于将来自气源116的工艺气体提供到腔室主体104的内部中。轴106通过腔室主体104的下部部分中的开口110延伸到处理容积112中。轴106耦接到基板支撑件140并且支撑基板支撑件140。基板W被示出为设置在基板支撑件140上。基板W可以是平面晶片或三维(3D)堆叠晶片。电源108通过轴106耦接到设置在基板支撑件140内的电极118。电源108偏置电极118以将基板W卡紧到基板支撑件140。在一个示例中，基板支撑件140是静电吸盘。
基板支撑件140可以与合适的处理腔室一起使用，包括未示出的处理腔室。合适的处理腔室包括由加利福尼亚州圣克拉拉市应用材料公司(Applied Materials，Inc.，ofSanta Clara，Calif)制造的那些处理腔室。然而，可以考虑其它处理腔室，包括来自其它制造商的处理腔室。这种处理腔室可以包括例如蚀刻腔室以及沉积腔室。
图2是示例性基板支撑件200的横截面。基板支撑件200可以用作图1的基板支撑件140。基板支撑件200具有介电主体202。介电主体202由介电材料制成，诸如陶瓷，如氧化铝或氮化铝。温度控制装置208设置在介电主体202内。温度控制装置208用于将基板支撑件200加热或冷却到所期望的温度。在一个示例中，温度控制装置208是电阻加热器。在另一个实施方式中，温度控制装置208是通道，所述通道被配置为使经加热或冷却的流体(诸如空气、氮、水、乙二醇等)从中流过，以将热量传递到介电主体202和/或从介电主体202传递热量。温度控制装置208可以将基板支撑件200的温度升高到高于350摄氏度的温度，诸如高于550摄氏度，例如约650摄氏度。电极206也设置在介电主体202内。电极206耦接到电源(诸如图1中的电源108)，所述电源向电极206提供电荷以将基板卡紧到基板支撑件200。
介电主体202具有基板卡紧表面212。壁架216围绕介电主体202的周边形成，以部分地限定基板卡紧表面212。壁架216具有例如约2.5mm的宽度，但是也可使用其它的尺寸，诸如约0.5mm、约1mm、约4mm、约5mm或甚至更大的尺寸。壁架216还在介电主体202中在壁架216的径向内侧限定凹槽218。多个特征214设置在凹槽218中。特征214从凹槽218的表面延伸以限定基板卡紧表面212的内部部分。特征214例如是圆柱形凹坑、脊、半球形突起等。在一个示例中，特征214从凹槽218延伸约10微米至约50微米的高度。在另一个示例中，特征214具有约1mm至约2mm的直径。
图3是基板支撑件200的自顶向下视图，示出了基板卡紧表面212。这里，特征214被示出为由壁架216包围。在一个示例中，特征214的数量大于500，诸如约1000。通过增加特征214的数量，大大地增加被提供用于将基板卡紧到基板卡紧表面212的面积。如图所示，特征214的数量(即密度)在凹槽218的靠近壁架216的周边位置处比在凹槽218的中心处更大。也就是说，特征214在基板支撑件200的基板卡紧表面212的周边处的每单位面积的数量比其中心区域处更大。特征214的径向分布朝向基板卡紧表面212的周边比其中心区域处更大。在一个示例中，特征214的数量从基板卡紧表面212的中心到壁架216径向向外增加。因此，施加到设置在基板卡紧表面212上的基板的卡紧力在其周边区域处增加，从而允许高度弯曲的基板(诸如1mm或更大的挠曲)被基板支撑件200保持(即“卡紧”)。这里，特征214被示出为同心圆。然而，图3的特征214的布置是示例性的而不是限制性的。例如，可以使用特征214的其它数量和定位。
图4是图2的介电主体202的表面的放大部分。为了进一步改进基板支撑件200的卡紧，任选地，在介电主体的特征214和壁架216上包括调配层400。调配层400由氧化铝、氧化硅、氮化硅、碳氧化硅或其任何组合的热氧化物以及其它材料形成，其耐受因暴露于用于基板处理的化学物质下而造成的降解。调配层400可以在基板的每个处理步骤(诸如腔室的清洁循环的一部分)之间一次或原位形成。此外，调配层400可以在其中基板支撑件200操作的同一腔室内或在不同腔室中原位形成。在一些实施方式中，调配层400可以非原位形成。调配层400可以具有约0.1微米与约4微米之间的厚度，例如诸如0.5微米与2微米之间。在一些实施方案中，调配层400原位形成并且具有小于1微米的厚度，诸如约0.7微米。调配层400改进介电主体202对因暴露于处理化学物质下而造成的降解的耐受性。因此，介电主体202的所期望的粗糙度(诸如小于5微米，诸如小于1微米，如在约0.06微米与约1.6微米之间)比常规的设计保持更长的时间，从而改进了基板支撑件200在高温(诸如高于550摄氏度，如约650摄氏度)下卡紧高度弯曲的基板的能力。
图5A和图5B提供了在电极118在等离子体处理腔室中执行的等离子体工艺期间由电源108偏置时流过介电主体202的测量到的泄漏电流(上方曲线)和介电主体202的测量电阻R(下方曲线)随时间变化的实验结果的示例。
在图5A中，示出针对使用裸硅基板的工艺和使用弯曲的基板而没有形成在所述弯曲的基板上的调配层400的工艺的在等离子体处理腔室中的等离子体工艺期间的静电卡紧结果。如图5A所示，来自裸硅基板和弓形基板的泄漏电流都随时间的增加而增加。
在图5B中，在与图5A中使用的等离子体处理腔室相同但是使用的是经调配的静电吸盘的等离子体处理腔室中的等离子体处理期间产生静电卡紧。在此示例中，示出针对使用裸硅基板的工艺和针对使用在其上形成有氧化硅层的弯曲的基板的工艺的结果。如图5B所示，去除来自裸硅基板和弯曲的基板的泄漏电流。因此，在此示例中使用调配层400消除或减少了裸硅基板和弯曲的基板的总泄漏电流并改进了卡紧性能。
在另一个实施方式中，基板示例200被设计有特定的性能参数，以便改进其卡紧能力。在一个示例中，介电主体202被设计为具有在约15mA与约115mA之间的泄漏电流。通过限制基板支撑件200的泄漏电流，由此提供的卡紧力的均匀性显著增加，从而改进基板处理的质量。
在另一个示例中，介电主体202被选择为具有相对于其操作温度所期望的电阻率，诸如约0.1×1010Ohm-cm与约1.0×1011Ohm-cm之间的电阻率。例如，介电主体202可以被设计成在约550摄氏度时具有约0.1×1010Ohm-cm与约1.0×1011Ohm-cm之间的电阻率，诸如在约0.8×1010Ohm-cm与约7×1010Ohm-cm之间。通过增加电阻率，提供足够的卡紧力所需的电压降低，从而防止等离子体的电弧。在另一个示例中，介电主体202可以被设计成在约350摄氏度时具有约0.1×1010Ohm-cm与约1.0×1011Ohm-cm之间的电阻率，诸如约0.2×1010Ohm-cm与约5×1010Ohm-cm之间。增加电阻率得到了在较低温度下的更好的卡紧性能。
虽然前述内容针对的是本公开内容的实施方式，但是可以在不脱离本公开内容的基本范围的情况下设计本公开内容的其它和进一步实施方式，并且本公开内容的范围由所附权利要求书确定。

Claims (20)

1.一种基板支撑件，包括：
温度控制基部；
介电主体，在所述介电主体上具有基板卡紧表面，所述基板卡紧表面部分地由壁架限定，所述壁架围绕所述介电主体的周边形成；
电极，所述电极设置在所述介电主体内；和
多个特征，所述多个特征以同心圆形成在所述壁架的径向内侧，其中每单位面积的特征的数量从所述基板卡紧表面的中心到所述壁架径向地增加，使得施加到设置在所述介电主体的所述基板卡紧表面上的基板的卡紧力朝向所述基板的周边增加。
2.如权利要求1所述的基板支撑件，其中所述多个特征中的每个特征具有在1mm与2mm之间的直径。
3.如权利要求1所述的基板支撑件，其中所述多个特征中的每个特征具有在10微米至50微米之间的高度。
4.如权利要求1所述的基板支撑件，其中所述多个特征包括约1000个特征。
5.如权利要求1所述的基板支撑件，进一步包括温度控制装置，所述温度控制装置设置在所述介电主体中。
6.如权利要求1所述的基板支撑件，其中所述介电主体具有在15毫安与115毫安之间的泄漏电流。
7.一种基板支撑件，包括：
介电主体，在所述介电主体上具有基板卡紧表面，所述基板卡紧表面部分地由壁架限定，所述壁架围绕所述介电主体的周边形成；
电极，所述电极设置在所述介电主体内；
多个特征，所述多个特征以同心圆形成在所述壁架的径向内侧，其中每单位面积的特征的数量从所述基板卡紧表面的中心到所述壁架径向地增加，使得施加到设置在所述介电主体的所述基板卡紧表面上的基板的卡紧力朝向所述基板的周边增加；和
调配层，所述调配层形成在所述介电主体上，所述调配层耐受因暴露于处理化学物质下而造成的降解。
8.如权利要求7所述的基板支撑件，其中所述多个特征中的每个特征具有在1mm与2mm之间的直径。
9.如权利要求7所述的基板支撑件，其中所述多个特征中的每个特征具有在10微米至50微米之间的高度。
10.如权利要求7所述的基板支撑件，其中所述调配层具有在0.5微米至10微米之间的厚度。
11.如权利要求7所述的基板支撑件，其中所述调配层包括氧化硅。
12.如权利要求7所述的基板支撑件，进一步包括温度控制装置，所述温度控制装置设置在所述介电主体中。
13.一种基板支撑件，包括：
介电主体，在所述介电主体上具有基板卡紧表面，所述基板卡紧表面部分地由壁架限定，所述壁架围绕所述介电主体的周边形成；
电极，所述电极设置在所述介电主体内；和
多个特征，所述多个特征以同心圆形成在所述基板卡紧表面上，其中所述多个特征在所述基板卡紧表面的周边处的每单位面积的分布大于在所述基板卡紧表面的中心区域处的每单位面积的分布，使得施加到设置在所述介电主体的所述基板卡紧表面上的基板的卡紧力朝向所述基板的周边增加，并且其中所述介电主体具有相对于所述基板支撑件的操作温度选择的电阻率。
14.如权利要求13所述的基板支撑件，其中所述多个特征中的每个特征具有在1mm与2mm之间的直径。
15.如权利要求13所述的基板支撑件，其中所述多个特征中的每个特征具有在10微米至50微米之间的高度。
16.如权利要求13所述的基板支撑件，其中所述多个特征包括约1000个特征。
17.如权利要求13所述的基板支撑件，其中所述基板支撑件和所述介电主体在约350摄氏度下具有在0.1×1010Ohm-cm与1.0×1011Ohm-cm之间的电阻率。
18.如权利要求13所述的基板支撑件，其中所述介电主体在约550度下具有在0.1×1010Ohm-cm与1.0×1011Ohm-cm之间的电阻率。
19.如权利要求13所述的基板支撑件，其中所述壁架包围所述多个特征。
20.如权利要求13所述的基板支撑件，进一步包括温度控制装置，所述温度控制装置设置在所述介电主体中。
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