KR20190131437A - 고온 정전 척 - Google Patents

고온 정전 척 Download PDF

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Publication number
KR20190131437A
KR20190131437A KR1020190056425A KR20190056425A KR20190131437A KR 20190131437 A KR20190131437 A KR 20190131437A KR 1020190056425 A KR1020190056425 A KR 1020190056425A KR 20190056425 A KR20190056425 A KR 20190056425A KR 20190131437 A KR20190131437 A KR 20190131437A
Authority
KR
South Korea
Prior art keywords
dielectric body
substrate
substrate support
features
ledge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020190056425A
Other languages
English (en)
Korean (ko)
Inventor
압둘 아지즈 카자
준 마
형제 우
페이 우
지안 리
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20190131437A publication Critical patent/KR20190131437A/ko
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01L21/6833—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H01L21/67098—
    • H01L21/67248—
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7614—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
KR1020190056425A 2018-05-16 2019-05-14 고온 정전 척 Ceased KR20190131437A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201862672317P 2018-05-16 2018-05-16
US62/672,317 2018-05-16
US16/381,986 US11133212B2 (en) 2018-05-16 2019-04-11 High temperature electrostatic chuck
US16/381,986 2019-04-11

Publications (1)

Publication Number Publication Date
KR20190131437A true KR20190131437A (ko) 2019-11-26

Family

ID=68533057

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020190056425A Ceased KR20190131437A (ko) 2018-05-16 2019-05-14 고온 정전 척

Country Status (4)

Country Link
US (1) US11133212B2 (https=)
JP (1) JP2020013983A (https=)
KR (1) KR20190131437A (https=)
CN (1) CN110504205B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12381106B2 (en) 2020-10-16 2025-08-05 Applied Materials, Inc. Systems and methods of seasoning electrostatic chucks with dielectric seasoning films

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* Cited by examiner, † Cited by third party
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JP7685617B2 (ja) * 2021-05-10 2025-05-29 アプライド マテリアルズ インコーポレイテッド 金属マトリックス複合材料を用いた高温サセプタ
US12603259B2 (en) * 2023-06-13 2026-04-14 Applied Materials, Inc. Resistivity-controlled dielectric materials for substrate supports with improved high temperature chucking
TW202522673A (zh) * 2023-07-21 2025-06-01 美商蘭姆研究公司 具有高密度電漿阻障塗層的靜電卡盤

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JPH0718438A (ja) 1993-06-17 1995-01-20 Anelva Corp 静電チャック装置
JPH07153825A (ja) * 1993-11-29 1995-06-16 Toto Ltd 静電チャック及びこの静電チャックを用いた被吸着体の処理方法
JPH09172055A (ja) * 1995-12-19 1997-06-30 Fujitsu Ltd 静電チャック及びウエハの吸着方法
JPH09237827A (ja) * 1996-03-01 1997-09-09 Hitachi Ltd 静電吸着装置及びそれを用いた電子ビーム露光装置
US5761023A (en) * 1996-04-25 1998-06-02 Applied Materials, Inc. Substrate support with pressure zones having reduced contact area and temperature feedback
JPH10125769A (ja) * 1996-10-21 1998-05-15 Matsushita Electron Corp 静電チャック電極構造
JPH10242255A (ja) * 1997-02-28 1998-09-11 Kyocera Corp 真空吸着装置
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JP2001274227A (ja) * 2000-03-27 2001-10-05 Hitachi Chem Co Ltd ウェーハ保持用セラミック部材の製造法
JP4043219B2 (ja) * 2001-11-13 2008-02-06 株式会社日本セラテック 静電チャック
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KR20040070008A (ko) * 2003-01-29 2004-08-06 쿄세라 코포레이션 정전척
US7138629B2 (en) * 2003-04-22 2006-11-21 Ebara Corporation Testing apparatus using charged particles and device manufacturing method using the testing apparatus
KR100666039B1 (ko) * 2003-12-05 2007-01-10 동경 엘렉트론 주식회사 정전척
US7544251B2 (en) * 2004-10-07 2009-06-09 Applied Materials, Inc. Method and apparatus for controlling temperature of a substrate
JP4740002B2 (ja) * 2006-03-20 2011-08-03 日本碍子株式会社 窒化アルミニウム焼結体、半導体製造装置用部材、及び窒化アルミニウム焼結体の製造方法
KR100804170B1 (ko) * 2006-06-13 2008-02-18 주식회사 아이피에스 웨이퍼블럭
US7723648B2 (en) * 2006-09-25 2010-05-25 Tokyo Electron Limited Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing system
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WO2014084060A1 (ja) * 2012-11-28 2014-06-05 京セラ株式会社 載置用部材およびその製造方法
KR102247936B1 (ko) * 2013-10-30 2021-05-04 가부시키가이샤 니콘 기판 유지 장치, 노광 장치 및 디바이스 제조 방법
US10418266B2 (en) * 2013-11-22 2019-09-17 Kyocera Corporation Electrostatic chuck
JP6262866B2 (ja) * 2014-01-20 2018-01-17 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィのための支持テーブル、リソグラフィ装置、及びデバイス製造方法
JP6308858B2 (ja) * 2014-04-25 2018-04-11 東京エレクトロン株式会社 静電チャック、載置台、プラズマ処理装置
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12381106B2 (en) 2020-10-16 2025-08-05 Applied Materials, Inc. Systems and methods of seasoning electrostatic chucks with dielectric seasoning films

Also Published As

Publication number Publication date
CN110504205A (zh) 2019-11-26
US11133212B2 (en) 2021-09-28
JP2020013983A (ja) 2020-01-23
CN110504205B (zh) 2023-07-21
US20190355608A1 (en) 2019-11-21

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