JP2019514196A - 回路保護素子 - Google Patents

回路保護素子 Download PDF

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Publication number
JP2019514196A
JP2019514196A JP2018545935A JP2018545935A JP2019514196A JP 2019514196 A JP2019514196 A JP 2019514196A JP 2018545935 A JP2018545935 A JP 2018545935A JP 2018545935 A JP2018545935 A JP 2018545935A JP 2019514196 A JP2019514196 A JP 2019514196A
Authority
JP
Japan
Prior art keywords
circuit protection
sheet
laminate
sheets
noise filter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2018545935A
Other languages
English (en)
Japanese (ja)
Inventor
ミョンホ イ
ミョンホ イ
ジョンフン イ
ジョンフン イ
Original Assignee
モダ−イノチップス シーオー エルティディー
モダ−イノチップス シーオー エルティディー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by モダ−イノチップス シーオー エルティディー, モダ−イノチップス シーオー エルティディー filed Critical モダ−イノチップス シーオー エルティディー
Priority claimed from PCT/KR2017/002342 external-priority patent/WO2017155250A1/ko
Publication of JP2019514196A publication Critical patent/JP2019514196A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0296—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices involving a specific disposition of the protective devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Filters And Equalizers (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2018545935A 2016-03-07 2017-03-03 回路保護素子 Pending JP2019514196A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
KR20160027325 2016-03-07
KR10-2016-0027325 2016-03-07
KR10-2016-0180228 2016-12-27
KR1020160180228A KR20170104366A (ko) 2016-03-07 2016-12-27 회로 보호 소자
PCT/KR2017/002342 WO2017155250A1 (ko) 2016-03-07 2017-03-03 회로 보호 소자

Publications (1)

Publication Number Publication Date
JP2019514196A true JP2019514196A (ja) 2019-05-30

Family

ID=59926946

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018545935A Pending JP2019514196A (ja) 2016-03-07 2017-03-03 回路保護素子

Country Status (4)

Country Link
JP (1) JP2019514196A (zh)
KR (2) KR20170104366A (zh)
CN (1) CN108780795B (zh)
TW (1) TWI655747B (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019112329A1 (ko) * 2017-12-07 2019-06-13 주식회사 아모텍 다이오드 복합소자 및 그의 제조 방법
KR102084066B1 (ko) * 2018-06-12 2020-03-04 주식회사 모다이노칩 적층형 소자
KR20240030266A (ko) * 2022-08-30 2024-03-07 주식회사 아모텍 적층형 공통 모드 필터
KR20240030264A (ko) * 2022-08-30 2024-03-07 주식회사 아모텍 적층형 공통 모드 필터

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11273953A (ja) * 1998-03-24 1999-10-08 Murata Mfg Co Ltd 積層型コモンモードチョークコイル
JP2004214643A (ja) * 2002-12-17 2004-07-29 Tdk Corp 積層チップバリスタとその製造方法
JP2007259026A (ja) * 2006-03-23 2007-10-04 Mitsubishi Materials Corp 積層型ノイズフィルタ
JP4458093B2 (ja) * 2005-01-07 2010-04-28 株式会社村田製作所 電子部品及び電子部品製造方法
WO2013031842A1 (ja) * 2011-09-02 2013-03-07 株式会社 村田製作所 フェライト磁器組成物、セラミック電子部品、及びセラミック電子部品の製造方法
WO2013038893A1 (ja) * 2011-09-14 2013-03-21 株式会社村田製作所 Ｅｓｄ保護デバイスおよびその製造方法
JP2015192149A (ja) * 2014-03-28 2015-11-02 イノチップ テクノロジー シーオー エルティディー 回路保護素子

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001358017A (ja) * 2000-06-12 2001-12-26 Murata Mfg Co Ltd 積層型コイル部品
CN1220328C (zh) * 2001-06-21 2005-09-21 株式会社村田制作所 噪声滤波器
JP2004072006A (ja) * 2002-08-09 2004-03-04 Matsushita Electric Ind Co Ltd 積層コモンモードノイズフィルタ
JP2005223262A (ja) * 2004-02-09 2005-08-18 Mitsubishi Materials Corp 積層型コモンモードチョークコイル及びその製造方法
KR100845948B1 (ko) * 2007-04-11 2008-07-11 주식회사 이노칩테크놀로지 회로 보호 소자 및 그 제조 방법
KR100876206B1 (ko) 2007-04-11 2008-12-31 주식회사 이노칩테크놀로지 회로 보호 소자 및 그 제조 방법
KR101135354B1 (ko) * 2010-10-14 2012-04-16 주식회사 이노칩테크놀로지 회로 보호 소자 및 그 제조 방법
WO2013031873A1 (ja) * 2011-08-31 2013-03-07 株式会社村田製作所 積層型コモンモードチョークコイルおよび高周波部品
WO2013164952A1 (ja) * 2012-05-02 2013-11-07 株式会社村田製作所 電子部品
JP6074653B2 (ja) * 2012-09-07 2017-02-08 パナソニックＩｐマネジメント株式会社 コモンモードノイズフィルタ

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11273953A (ja) * 1998-03-24 1999-10-08 Murata Mfg Co Ltd 積層型コモンモードチョークコイル
JP2004214643A (ja) * 2002-12-17 2004-07-29 Tdk Corp 積層チップバリスタとその製造方法
JP4458093B2 (ja) * 2005-01-07 2010-04-28 株式会社村田製作所 電子部品及び電子部品製造方法
JP2007259026A (ja) * 2006-03-23 2007-10-04 Mitsubishi Materials Corp 積層型ノイズフィルタ
WO2013031842A1 (ja) * 2011-09-02 2013-03-07 株式会社 村田製作所 フェライト磁器組成物、セラミック電子部品、及びセラミック電子部品の製造方法
WO2013038893A1 (ja) * 2011-09-14 2013-03-21 株式会社村田製作所 Ｅｓｄ保護デバイスおよびその製造方法
JP2015192149A (ja) * 2014-03-28 2015-11-02 イノチップ テクノロジー シーオー エルティディー 回路保護素子

Also Published As

Publication number Publication date
KR20180088611A (ko) 2018-08-06
TWI655747B (zh) 2019-04-01
TW201803083A (zh) 2018-01-16
CN108780795B (zh) 2023-06-20
KR20170104366A (ko) 2017-09-15
KR102216555B1 (ko) 2021-02-17
CN108780795A (zh) 2018-11-09

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