JP2019149409A - Low−k膜付きウエハの分断方法 - Google Patents
Low−k膜付きウエハの分断方法 Download PDFInfo
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- JP2019149409A JP2019149409A JP2018032121A JP2018032121A JP2019149409A JP 2019149409 A JP2019149409 A JP 2019149409A JP 2018032121 A JP2018032121 A JP 2018032121A JP 2018032121 A JP2018032121 A JP 2018032121A JP 2019149409 A JP2019149409 A JP 2019149409A
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- Prior art keywords
- film
- low
- wafer
- break
- silicon substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02016—Backside treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
- H01L2221/6839—Separation by peeling using peeling wedge or knife or bar
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Dicing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Laser Beam Processing (AREA)
Abstract
Description
1α BG後シリコン基板
2 Low−k膜
3 チップ構成要素
5 表面保護テープ
6 ダイシングテープ
7 保持リング
8 表面保護テープ
10 Low−k膜付きウエハ
10α BG後ウエハ
10β ブレーク後ウエハ
10a (Low−k膜付きウエハの)表面
10b (Low−k膜付きウエハの)裏面
100 ブレーク処理装置
101 支持部
101a 上面
102 ベース部
103 ブレークプレート
103e 刃先
110 ステージ
CP デバイスチップ
CR 亀裂
F 集光点
LB レーザビーム
LS 出射源
RE 変質領域
SL スクライブライン
ST ストリート
UP 単位パターン
Claims (2)
- シリコン基板の一方主面上にLow−k膜が積層形成されたLow−k膜付きウエハを、あらかじめ画定されたストリートに沿って分断する方法であって、
a)レーザビームの照射によって、前記シリコン基板の内部に前記ストリートに沿って変質領域を形成する変質領域形成工程と、
b)前記変質領域形成工程を経た前記Low−k膜付きウエハの前記シリコン基板を研削し前記変質領域をスクライブラインとして露出させるバックグラインド工程と、
c)前記バックグラインド工程を経た前記Low−k膜付きウエハに対し、前記Low−k膜の側から前記スクライブラインに沿ってブレークプレートを当接させることによって前記Low−k膜付きウエハをブレークするブレーク工程と、
d)前記ブレーク工程を経た前記Low−k膜付きウエハをエキスパンド処理することにより、前記Low−k膜付きウエハの前記ストリートによって区画されていた部分を互いに離隔させるエキスパンド工程と、
を備えることを特徴とする、Low−k膜付きウエハの分断方法。 - 請求項1に記載のLow−k膜付きウエハの分断方法であって、
前記ブレーク工程においては、前記ブレークプレートとして、刃先角が5°〜25°であり、曲率半径が5μm〜25μmであるものを用いる、
ことを特徴とする、Low−k膜付きウエハの分断方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018032121A JP7020675B2 (ja) | 2018-02-26 | 2018-02-26 | Low-k膜付きウエハの分断方法 |
TW108102640A TW201937582A (zh) | 2018-02-26 | 2019-01-24 | 具有低介電膜之晶圓之分斷方法 |
KR1020190018777A KR20190103006A (ko) | 2018-02-26 | 2019-02-18 | Low-k막 부착 웨이퍼의 분단 방법 |
CN201910122464.2A CN110197811A (zh) | 2018-02-26 | 2019-02-18 | 带有Low-k膜的晶片的分割方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018032121A JP7020675B2 (ja) | 2018-02-26 | 2018-02-26 | Low-k膜付きウエハの分断方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019149409A true JP2019149409A (ja) | 2019-09-05 |
JP7020675B2 JP7020675B2 (ja) | 2022-02-16 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018032121A Active JP7020675B2 (ja) | 2018-02-26 | 2018-02-26 | Low-k膜付きウエハの分断方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP7020675B2 (ja) |
KR (1) | KR20190103006A (ja) |
CN (1) | CN110197811A (ja) |
TW (1) | TW201937582A (ja) |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009206162A (ja) * | 2008-02-26 | 2009-09-10 | Disco Abrasive Syst Ltd | ウエーハの分割方法 |
JP2012004278A (ja) * | 2010-06-16 | 2012-01-05 | Fujitsu Semiconductor Ltd | 半導体装置の製造方法及び半導体製造装置 |
JP2012109358A (ja) * | 2010-11-16 | 2012-06-07 | Tokyo Seimitsu Co Ltd | 半導体基板の切断方法及び半導体基板の切断装置 |
JP2013230477A (ja) * | 2012-04-27 | 2013-11-14 | Disco Corp | レーザー加工装置及びレーザー加工方法 |
JP2014038877A (ja) * | 2012-08-10 | 2014-02-27 | Disco Abrasive Syst Ltd | ウェーハの加工方法 |
JP2015083337A (ja) * | 2013-10-25 | 2015-04-30 | 三星ダイヤモンド工業株式会社 | ブレイク装置 |
JP2015084349A (ja) * | 2013-10-25 | 2015-04-30 | 三星ダイヤモンド工業株式会社 | ブレイク装置 |
JP2015149444A (ja) * | 2014-02-07 | 2015-08-20 | 株式会社ディスコ | ウェーハの加工方法 |
JP2016040810A (ja) * | 2014-08-13 | 2016-03-24 | 株式会社ディスコ | ブレーキング装置 |
JP2016174092A (ja) * | 2015-03-17 | 2016-09-29 | 株式会社ディスコ | 光デバイスチップの製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007173475A (ja) | 2005-12-21 | 2007-07-05 | Disco Abrasive Syst Ltd | ウエーハの分割方法 |
JP5992731B2 (ja) | 2012-06-07 | 2016-09-14 | 株式会社ディスコ | ウエーハの加工方法 |
JP6043150B2 (ja) | 2012-10-29 | 2016-12-14 | 三星ダイヤモンド工業株式会社 | 積層脆性材料基板のブレイク装置および積層脆性材料基板のブレイク方法 |
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2018
- 2018-02-26 JP JP2018032121A patent/JP7020675B2/ja active Active
-
2019
- 2019-01-24 TW TW108102640A patent/TW201937582A/zh unknown
- 2019-02-18 CN CN201910122464.2A patent/CN110197811A/zh not_active Withdrawn
- 2019-02-18 KR KR1020190018777A patent/KR20190103006A/ko unknown
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009206162A (ja) * | 2008-02-26 | 2009-09-10 | Disco Abrasive Syst Ltd | ウエーハの分割方法 |
JP2012004278A (ja) * | 2010-06-16 | 2012-01-05 | Fujitsu Semiconductor Ltd | 半導体装置の製造方法及び半導体製造装置 |
JP2012109358A (ja) * | 2010-11-16 | 2012-06-07 | Tokyo Seimitsu Co Ltd | 半導体基板の切断方法及び半導体基板の切断装置 |
JP2013230477A (ja) * | 2012-04-27 | 2013-11-14 | Disco Corp | レーザー加工装置及びレーザー加工方法 |
JP2014038877A (ja) * | 2012-08-10 | 2014-02-27 | Disco Abrasive Syst Ltd | ウェーハの加工方法 |
JP2015083337A (ja) * | 2013-10-25 | 2015-04-30 | 三星ダイヤモンド工業株式会社 | ブレイク装置 |
JP2015084349A (ja) * | 2013-10-25 | 2015-04-30 | 三星ダイヤモンド工業株式会社 | ブレイク装置 |
JP2015149444A (ja) * | 2014-02-07 | 2015-08-20 | 株式会社ディスコ | ウェーハの加工方法 |
JP2016040810A (ja) * | 2014-08-13 | 2016-03-24 | 株式会社ディスコ | ブレーキング装置 |
JP2016174092A (ja) * | 2015-03-17 | 2016-09-29 | 株式会社ディスコ | 光デバイスチップの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
TW201937582A (zh) | 2019-09-16 |
CN110197811A (zh) | 2019-09-03 |
KR20190103006A (ko) | 2019-09-04 |
JP7020675B2 (ja) | 2022-02-16 |
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