JP2019145790A - 容量素子、及び容量素子の製造方法 - Google Patents
容量素子、及び容量素子の製造方法 Download PDFInfo
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- JP2019145790A JP2019145790A JP2019017901A JP2019017901A JP2019145790A JP 2019145790 A JP2019145790 A JP 2019145790A JP 2019017901 A JP2019017901 A JP 2019017901A JP 2019017901 A JP2019017901 A JP 2019017901A JP 2019145790 A JP2019145790 A JP 2019145790A
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- electrode
- capacitive element
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- 238000004519 manufacturing process Methods 0.000 title claims description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 75
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 75
- 239000010703 silicon Substances 0.000 claims abstract description 75
- 238000009826 distribution Methods 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims description 33
- 150000003377 silicon compounds Chemical class 0.000 claims description 23
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 16
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 9
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 7
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 7
- 229910000077 silane Inorganic materials 0.000 claims description 7
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 6
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 6
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 5
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims description 3
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000005049 silicon tetrachloride Substances 0.000 claims description 3
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 claims description 3
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 100
- 239000010408 film Substances 0.000 description 61
- 239000003990 capacitor Substances 0.000 description 23
- 230000015572 biosynthetic process Effects 0.000 description 21
- 239000000758 substrate Substances 0.000 description 20
- 230000015556 catabolic process Effects 0.000 description 19
- 230000000052 comparative effect Effects 0.000 description 17
- 238000006243 chemical reaction Methods 0.000 description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 14
- 229910052799 carbon Inorganic materials 0.000 description 14
- 150000002500 ions Chemical class 0.000 description 13
- 238000004458 analytical method Methods 0.000 description 12
- 230000007423 decrease Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 239000007789 gas Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 230000007547 defect Effects 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 9
- 239000010936 titanium Substances 0.000 description 9
- 238000000231 atomic layer deposition Methods 0.000 description 8
- 239000004020 conductor Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 238000010030 laminating Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000002994 raw material Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000000470 constituent Substances 0.000 description 5
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000005325 percolation Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000002042 time-of-flight secondary ion mass spectrometry Methods 0.000 description 3
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 2
- ZYLGGWPMIDHSEZ-UHFFFAOYSA-N dimethylazanide;hafnium(4+) Chemical compound [Hf+4].C[N-]C.C[N-]C.C[N-]C.C[N-]C ZYLGGWPMIDHSEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- NPEOKFBCHNGLJD-UHFFFAOYSA-N ethyl(methyl)azanide;hafnium(4+) Chemical compound [Hf+4].CC[N-]C.CC[N-]C.CC[N-]C.CC[N-]C NPEOKFBCHNGLJD-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000005011 time of flight secondary ion mass spectroscopy Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241001465754 Metazoa Species 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- -1 hafnium nitride Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000002087 whitening effect Effects 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
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- H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
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- H01L21/02189—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing zirconium, e.g. ZrO2
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- H01L21/02107—Forming insulating materials on a substrate
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Abstract
Description
容量素子の静電容量Cは、電極間に挟まれた誘電体層の誘電率をε、真空の誘電率をε0、誘電体層の膜厚をt、電極の面積をSとした場合、C=ε×ε0×S/tで表される。このため、容量密度を高める方策には、誘電体層の誘電率εを高めることだけでなく、誘電体層の膜厚tを薄くすることなどがある。
[構成]
図1は、実施の形態に係る容量素子10の断面構造の一例を示す断面図である。
続いて、本実施の形態に係る容量素子10の製造方法について、図3Aから図3Dを用いて説明する。図3Aから図3Dは、本実施の形態に係る容量素子10の製造方法の各工程を示す断面図である。
まず、Siウエハからなる基板上に、下部電極11としてTiN膜を膜厚15nmで成膜した。次に、350℃、90Torrの高温減圧雰囲気にした炉内で、SiH4ガスに180secの暴露処理を行った。次に、誘電体層12として、HfOxを膜厚21nmで成膜した。次に、上部電極13としてTiN膜を膜厚70nmで成膜した。その後、窒素雰囲気で400℃、30minの熱処理を行った。これにより、実施例に係る容量素子10を作製した。
本発明者らは、比較例として、シリコン化合物に下部電極11を暴露させていない容量素子も作製した。比較例に係る容量素子は、下部電極11をSiH4に暴露させない点を除いて、実施例と同様の条件に従って作製した。
以下では、作製した実施例及び比較例に係る容量素子及び膜分析用サンプルの特性を分析した結果について説明する。
ここで、実施例及び比較例に係る容量素子の電圧−電流特性について、図8を用いて説明する。
続いて、本実施の形態に係る容量素子10を備えるイメージセンサ100について、図9を用いて説明する。図9は、本実施の形態に係るイメージセンサ100の断面構造を示す断面図である。
次に、本実施の形態に係る容量素子20を備えるメモリデバイス200について、図10を用いて説明する。図10は、本実施の形態に係るメモリデバイス200の断面構造を示す断面図である。
以上、1つ又は複数の態様に係る容量素子及びその製造方法、並びに、イメージセンサ及びメモリデバイスについて、実施の形態に基づいて説明したが、本開示は、これらの実施の形態に限定されるものではない。本開示の主旨を逸脱しない限り、当業者が思いつく各種変形を本実施の形態に施したもの、及び、異なる実施の形態における構成要素を組み合わせて構築される形態も、本開示の範囲内に含まれる。
11、21 下部電極
12、22 誘電体層
13、23 上部電極
90 凸部
91 頂点
92 上端
93 下端
100 イメージセンサ
110、210 基板
120 多層配線構造
130 光電変換素子
131 画素電極
132 光電変換膜
133 透明電極
200 メモリデバイス
201 DRAM形成領域
202 ロジック回路形成領域
220 メモリセル
230 配線層
231、232 コンタクトプラグ
240、241、242 絶縁膜
Claims (8)
- 第1電極と、
前記第1電極に対向する第2電極と、
前記第1電極と前記第2電極との間に位置し、かつ前記第1電極に接する誘電体層と、を備え、
前記第1電極のうち、前記第1電極と前記誘電体層との界面と接する第1部分、及び前記誘電体層のうち、前記界面と接する第2部分に珪素が含有され、
前記第1部分及び前記第2部分の厚み方向に沿った、前記珪素の濃度分布は、前記界面を横切る凸部を含む、
容量素子。 - 前記誘電体層は、ハフニウムの酸化物及びジルコニウムの酸化物からなる群から選択される少なくとも1つにより構成される、
請求項1に記載の容量素子。 - 前記凸部において前記珪素の濃度が最大となる位置は、前記第1部分内に位置する、
請求項1または2に記載の容量素子。 - 前記凸部において前記珪素の濃度が最大となる位置における前記珪素の含有率は、1at%以上25at%以下である、
請求項1から3のいずれかに記載の容量素子。 - 前記第1電極は、窒化チタン及び窒化タンタルからなる群から選択される少なくとも1つにより構成される、
請求項1から4のいずれかに記載の容量素子。 - 前記凸部において前記珪素の濃度が最大となる位置は、前記厚み方向において前記界面から±10nmの範囲内に位置する、
請求項1から5のいずれかに記載の容量素子。 - 第1電極を形成する工程と、
前記第1電極を、シリコン化合物を含むガスに暴露することで、前記第1電極に珪素を含有させる工程と、
前記第1電極上に誘電体層を形成する工程と、を含み、
前記珪素を含有させる工程は、前記誘電体層を形成する工程の前に行われる、
容量素子の製造方法。 - 前記シリコン化合物は、シラン、ジシラン、ジクロロシラン、三塩化シラン、四塩化珪素、及び四フッ化珪素のいずれかである、
請求項7に記載の容量素子の製造方法。
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