JP2019140211A - 基板載置台及びこれを備えたプラズマ処理装置及びプラズマ処理方法 - Google Patents
基板載置台及びこれを備えたプラズマ処理装置及びプラズマ処理方法 Download PDFInfo
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Abstract
Description
被処理用の基板を静電吸着する基板載置台であって、
前記基板を静電吸着する電極を内蔵する上側円盤部と、該上側円盤部の下側に、前記上側円盤部より大きな径を有するとともにヒータを内蔵する下側円盤部とからなる静電チャックと、
前記下側円盤部の下側に配置され、前記静電チャックを冷却する冷却ジャケットと、
前記上側円盤部の径方向外方に配置され、前記下側円盤部の上面を覆うフォーカスリングと、
前記冷却ジャケットの少なくとも一部及び前記下側円盤部を囲む断熱用の上側環状カバーと、
前記上側環状カバーとで前記冷却ジャケットを挟持する断熱用の下側環状カバーとを備え、
前記フォーカスリング、前記上側環状カバー及び前記下側環状カバーは、セラミック製である基板載置台に係る。
前記冷却ジャケットの径方向外周面に外向きのフランジ部が一体に形成され、
前記フランジ部は、前記上側環状カバーと前記下側環状カバーとにより上下から挟持されていることが好ましい。
前記静電チャックと前記冷却ジャケットとの間には、前記ヒータの配置領域の全域に延在するとともに外部から密封された微小隙間が形成され、
前記微小隙間は、ヘリウムガス供給部と真空ポンプとに切り換え自在に接続されることにより、ヘリウムガス充填状態と真空状態との間で変更自在となるように構成されることが好ましい。
図1は本発明の一実施形態に係るプラズマ処理装置1の概略的な構成を示す縦断面図である。図1のプラズマ処理装置1は、閉塞空間を有するチャンバ11と、このチャンバ11内に昇降シリンダ(図示せず)により昇降自在に配設され、ウェハ等の被処理用の基板Kが載置される基板載置台15と、該基板載置台15内にあって、ウェハリフタを昇降させる昇降シリンダ19と、チャンバ11内にエッチングガス、保護膜形成ガス及び不活性ガスを供給するガス供給装置20と、チャンバ11内に供給されたエッチングガス、保護膜形成ガス及び不活性ガスをプラズマ化するプラズマ生成装置30と、チャンバ11内の圧力を減圧する排気装置40と、基板載置台15にプラズマ処理用の高周波電力を供給する高周波電源35と、基板載置台15に静電吸着用の電圧を印加する静電吸着用電源36とを備えて構成される。さらに、基板載置台15及び基板Kの温度を調整するための各種装置からなる温度調整システム50を備える。
15 基板載置台
50 温度調整システム
52 ヘリウムガス供給部
54 真空ポンプ
61 静電チャック
61a 上側円盤部
61b 下側円盤部
62 冷却ジャケット
62c フランジ部
64 フォーカスリング
65 上側環状カバー
66 下側環状カバー
71 静電吸着用電極
72 ヒータ
74 冷媒流路
80 微小隙間
81 Oリング
Claims (7)
- 被処理用の基板を静電吸着する基板載置台であって、
前記基板を静電吸着する電極を内蔵する上側円盤部と、該上側円盤部の下側に、前記上側円盤部より大きな径を有するとともにヒータを内蔵する下側円盤部とからなる静電チャックと、
前記下側円盤部の下側に配置され、前記静電チャックを冷却する冷却ジャケットと、
前記上側円盤部の径方向外方に配置され、前記下側円盤部の上面を覆うフォーカスリングと、
前記冷却ジャケットの少なくとも一部及び前記下側円盤部を囲む断熱用の上側環状カバーと、
前記上側環状カバーとで前記冷却ジャケットを挟持する断熱用の下側環状カバーとを備え、
前記フォーカスリング、前記上側環状カバー及び前記下側環状カバーは、セラミック製であることを特徴とする基板載置台。 - 前記ヒータの配置領域は、前記基板の径よりも大きな径を有していることを特徴とする請求項1記載の基板載置台。
- 前記冷却ジャケットの径方向外周面に外向きのフランジ部が一体に形成され、
前記フランジ部は、前記上側環状カバーと前記下側環状カバーとにより上下から挟持されていることを特徴とする請求項1または2記載の基板載置台。 - 前記静電チャックと前記冷却ジャケットとの間には、前記ヒータの配置領域の全域に延在するとともに外部から密封された微小隙間が形成され、
前記微小隙間は、ヘリウムガス供給部と真空ポンプとに切り換え自在に接続されることにより、ヘリウムガス充填状態と真空状態との間で変更自在となることを特徴とする請求項1〜3のうちのいずれか1つに記載の基板載置台。 - 前記静電チャックは、窒化アルミニウム製であることを特徴とする請求項1〜4のうちのいずれか1つに記載の基板載置台。
- 請求項1〜5のうちのいずれか1つに記載の基板載置台をチャンバ内に備えたことを特徴とするプラズマ処理装置。
- 被処理用の基板を加熱する静電チャックと、該静電チャックを冷却する冷却ジャッケットとを備え、前記静電チャックと前記冷却ジャケットとの間には外部から密封された微小隙間が形成されたプラズマ処理装置におけるプラズマ処理方法であって、
前記基板を前記静電チャックにより加熱するときは、前記静電チャックと前記冷却ジャケットとの間の微小隙間を真空状態とし、
前記加熱されて高温となった前記基板をエッチングするときは、前記静電チャックと前記冷却ジャケットとの間の微小隙間にヘリウムガスを充填させることにより前記基板の熱を前記冷却ジャッケットに逃がして前記基板を冷却することを特徴とするプラズマ処理方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
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JP2018021302A JP6522180B1 (ja) | 2018-02-08 | 2018-02-08 | 基板載置台及びこれを備えたプラズマ処理装置及びプラズマ処理方法 |
PCT/JP2019/000283 WO2019155808A1 (ja) | 2018-02-08 | 2019-01-09 | 基板載置台及びこれを備えたプラズマ処理装置及びプラズマ処理方法 |
KR1020197024274A KR102627348B1 (ko) | 2018-02-08 | 2019-01-09 | 기판 재치대 및 이를 구비하는 플라즈마 처리 장치 및 플라즈마 처리 방법 |
CN201980001478.7A CN110352482A (zh) | 2018-02-08 | 2019-01-09 | 基板载置台及其电浆处理装置以及电浆处理方法 |
US16/613,975 US11393664B2 (en) | 2018-02-08 | 2019-01-09 | Substrate placing table, plasma processing apparatus provided with same, and plasma processing method |
EP19751281.7A EP3614423A4 (en) | 2018-02-08 | 2019-01-09 | SUBSTRATE PLACEMENT PLATFORM, PLASMA TREATMENT DEVICE INCLUDING IT, AND PLASMA TREATMENT PROCESS |
TW108101690A TWI812667B (zh) | 2018-02-08 | 2019-01-16 | 基板載置台及具備該基板載置台的電漿處理裝置、以及電漿處理方法 |
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US11393664B2 (en) | 2022-07-19 |
KR102627348B1 (ko) | 2024-01-19 |
EP3614423A1 (en) | 2020-02-26 |
US20210265141A1 (en) | 2021-08-26 |
JP6522180B1 (ja) | 2019-05-29 |
EP3614423A4 (en) | 2020-12-30 |
CN110352482A (zh) | 2019-10-18 |
KR20200117832A (ko) | 2020-10-14 |
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